Embodiments disclosed herein include methods of depositing a metal oxo photoresist using dry deposition processes. In an embodiment, the method comprises forming a first metal oxo film on the substrate with a first vapor phase process including a first metal precursor vapor and a first oxidant vapor, and forming a second metal oxo film over the first metal oxo film with a second vapor phase process including a second metal precursor vapor and a second oxidant vapor.

The invention provides certain mixed Sn (II) amide/alkoxide precursor compounds. These compounds are useful in precursor compositions in the vapor deposition of tin-containing films such as tin oxide films onto a surface of a microelectronic device. These precursor compounds are useful in, for example, extreme ultraviolet light (EUV) lithography techniques used in microelectronic device manufacturing when paired with certain counter-reactants in a vapor deposition process. In this process, the resulting organotin polymeric surface is thus EUV-patternable insofar as when exposed to a patterned beam of EUV light, exposed portions are subjected to further reaction, thus creating regions which are chemically and physically different; this difference enables further processing and lithography of exposed regions and/or non-exposed regions and lithography in pursuit of the ultimate fabricated microelectronic device.

Methods of forming structures including a photoresist absorber layer and structures including the photoresist absorber layer are disclosed. Exemplary methods include forming the photoresist absorber layer that includes an element having a relatively high extreme ultraviolet (EUV) sensitivity on a mass basis while having a relatively low EUV sensitivity on a mole basis.

Stabilized precursor solutions can be used to form radiation inorganic coating materials. The precursor solutions generally comprise metal suboxide cations, peroxide-based ligands and polyatomic anions. Design of the precursor solutions can be performed to achieve a high level of stability of the precursor solutions. The resulting coating materials can be designed for patterning with a selected radiation, such as ultraviolet light, x-ray radiation or electron beam radiation. The radiation patterned coating material can have a high contrast with respect to material properties, such that development of a latent image can be successful to form lines with very low line-width roughness and adjacent structures with a very small pitch.

Various embodiments relate to forming particles using undercooled metal particles in response to focused low power laser light. Particle growth can be initiated by utilizing the metastable and liquid nature of the particles, allowing for surface instability promoted by the laser light to induce liquid flow to translate to a neighboring particle. This event can cascade radially leading to accumulation of the liquid metal at the epicenter. The grown solidified particle size can be varied by using different power, exposure time, or working distance. Once the liquid has accumulated into a single region, it eventually solidifies either through homogeneous or heterogeneous nucleation to give a solid particle of larger size than the original. Such a method can be used to print patterns on a surface in four dimensions, where the fourth dimension (4D) is attained through gradient in size of the particles made. Additional systems and methods are disclosed.

A quantum dot, and a quantum dot composite and a device including the same, wherein the quantum dot includes a seed including a first semiconductor nanocrystal, a quantum well layer disposed on the seed and a shell disposed on the quantum well layer, the shell including a second semiconductor nanocrystal, and wherein the quantum dot does not include cadmium, wherein the first semiconductor nanocrystal includes a first zinc chalcogenide, wherein the second semiconductor nanocrystal includes a second zinc chalcogenide, and the quantum well layer includes an alloy semiconductor nanocrystal including indium (In), phosphorus (P), and gallium (Ga), and wherein a bandgap energy of the alloy semiconductor nanocrystal is less than a bandgap energy of the first semiconductor nanocrystal and less than a bandgap energy of the second semiconductor nanocrystal.

Provided are a photosensitive resin composition including (A) a binder resin including a first binder resin and a second binder resin, (B) a photopolymerizable monomer, (C) a photopolymerization initiator, (D) a black inorganic pigment, (E) an inorganic scatterer, and (F) a solvent, wherein the first binder resin has a higher refractive index than the second binder resin, the first binder resin is included in an amount equal to or less than that of the second binder resin, and a primary particle diameter of the black inorganic pigment is less than or equal to 45 nm, a photosensitive resin layer using the same, and a display device including the photosensitive resin layer.

Disclosed is a method of preparing polymer film-metal composites and uses of such composites. The metal can be in the form of a nanoparticle or a film. The methods comprise depositing on a surface, a composition comprising: a cationic metal precursor; a polymer film precursor that comprises a plurality of photopolymerizable groups; and a photoreducer-photoinitiator; then irradiating the composition under conditions to simultaneously reduce the cationic metal and polymerize the photopolymerizable groups to obtain the composite on the surface.

A composition comprising (A) a polymer comprising recurring units (a1) having a carboxyl group protected with an acid labile group and recurring units (a2) having a cyclic ester, cyclic carbonate or cyclic sulfonate structure, (B) a thermal acid generator, and (C) an organic solvent is suited to form a protective film between a substrate and a resist film. Even when a metal-containing resist film is used, the protective film is effective for preventing the substrate from metal contamination.

Embodiments of the present disclosure generally relate to a multilayer stack used as a mask in extreme ultraviolet (EUV) lithography and methods for forming a multilayer stack. In one embodiment, the method includes forming a carbon layer over a film stack, forming a metal rich oxide layer on the carbon layer by a physical vapor deposition (PVD) process, forming a metal oxide photoresist layer on the metal rich oxide layer, and patterning the metal oxide photoresist layer. The metal oxide photoresist layer is different from the metal rich oxide layer and is formed by a process different from the PVD process. The metal rich oxide layer formed by the PVD process improves adhesion of the metal oxide photoresist layer and increases the secondary electrons during EUV lithography, which leads to decreased EUV dose energies.