Embodiments in accordance with the present invention encompass self-imagable polymer compositions containing a colorant which are useful for forming films that can be patterned to create structures for color filters and microlens having applications in a variety of microelectronic devices, optoelectronic devices and displays, such as for example image sensors. The compositions of this invention can be tailored to form positive tone images for forming an array of images, which can be thermally transformed into an array of microlens. The images thus formed can then be used in color filter applications.

According to several embodiments, a composition of matter includes: a three-dimensional structure comprising photo polymerized molecules. At least some of the photo polymerized molecules further comprise one or more protected click-chemistry compatible functional groups; and at least portions of one or more surfaces of the three-dimensional structure are functionalized with one or more of the protected click-chemistry compatible functional groups.

According to several embodiments, a composition of matter includes: a three-dimensional structure comprising photo polymerized molecules. At least some of the photo polymerized molecules further comprise one or more protected click-chemistry compatible functional groups; and at least portions of one or more surfaces of the three-dimensional structure are functionalized with one or more of the protected click-chemistry compatible functional groups.

The present invention relates to providing a thin film transistor substrate containing a protective film, which can impart high driving stability. The thin film transistor substrate contains a thin film transistor and a protective film containing a cured product of a siloxane composition which covers the thin film transistor, wherein the thin film transistor has a semiconductor layer made of an oxide semiconductor, and wherein the siloxane composition contains polysiloxane, a fluorine-containing compound, and a solvent.

The present invention relates to providing a thin film transistor substrate containing a protective film, which can impart high driving stability. The thin film transistor substrate contains a thin film transistor and a protective film containing a cured product of a siloxane composition which covers the thin film transistor, wherein the thin film transistor has a semiconductor layer made of an oxide semiconductor, and wherein the siloxane composition contains polysiloxane, a fluorine-containing compound, and a solvent.

A photoresist material, a method of fabricating the same, and a color filter substrate are described. The photoresist material has an oligomer segment having a chemical structural formula of:

##STR00001##

wherein a value of n is 1 to 2.

A photoresist composition includes a conjugated resist additive, a photoactive compound, and a polymer resin. The conjugated resist additive is one or more selected from the group consisting of a polyacetylene, a polythiophene, a polyphenylenevinylene, a polyfluorene, a polypryrrole, a polyphenylene, and a polyaniline. The polyacetylene, polythiophene, polyphenylenevinylene, polyfluorene, polypryrrole, the polyphenylene, and polyaniline includes a substituent selected from the group consisting of an alkyl group, an ether group, an ester group, an alkene group, an aromatic group, an anthracene group, an alcohol group, an amine group, a carboxylic acid group, and an amide group. Another photoresist composition includes a polymer resin having a conjugated moiety and a photoactive compound. The conjugated moiety is one or more selected from the group consisting of a polyacetylene, a polythiophene, a polyphenylenevinylene, a polyfluorene, a polypryrrole, a polyphenylene, and a polyaniline.

A stepped substrate-coating composition for forming a coating film having filling property of a pattern and flattening property including a compound (E) having a partial structure (I) and a partial structure (II) having a hydroxy group formed by a reaction of an epoxy group with a proton-generating compound, a solvent (F), and a crosslinkable compound (H), wherein the partial structure (I) is from Formulae (1-1) to (1-5) or including a partial structure of Formula (1-6) combined with a partial structure of Formula (1-7) or (1-8), and the partial structure (II) is of the following Formula (2-1) or (2-2), wherein the compound (E) contains the epoxy and hydroxy group at a molar ratio (epoxy group)/(hydroxy group) of 0 or more and 0.5 or less, and contains the partial structure (II) so the molar ratio (partial structure (II))/(partial structure (I)+partial structure (II)) is 0.01 or more and 0.8 or less.

##STR00001##

Disclosed is a method of forming a resist pattern which comprises: forming a radiation-sensitive resin film using a resin liquid containing an alkali-soluble resin, a cross-linker component, and an organic solvent; exposing the radiation-sensitive resin film to form a cured film; developing the cured film to form a developed pattern; and applying post-development baking on the developed pattern to provide a resist pattern, wherein the alkali-soluble resin comprises 35% by mass or more and 90% by mass or less of a polyvinyl phenol resin, and a temperature of the post-development baking is 200 C. or higher.

Disclosed is a method of forming a resist pattern which comprises: forming a radiation-sensitive resin film using a resin liquid containing an alkali-soluble resin, a cross-linker component, and an organic solvent; exposing the radiation-sensitive resin film to form a cured film; developing the cured film to form a developed pattern; and applying post-development baking on the developed pattern to provide a resist pattern, wherein the alkali-soluble resin comprises 35% by mass or more and 90% by mass or less of a polyvinyl phenol resin, and a temperature of the post-development baking is 200 C. or higher.