Disclosed is a fabrication method for electronic products, comprising planarization coating of a flexible substrate using a radiation curable composition.

The present invention relates to a process for producing a patterned film comprising particles comprising an AMX compound, which process comprises: (a) providing a photoresist layer disposed on a substrate, which photoresist layer comprises a mixture of a photoresist and particles comprising an AMX compound; (b) defining a pattern on the photoresist layer by exposing regions of the photoresist layer to light and thereby producing a patterned photoresist layer; and (c) treating the patterned photoresist layer with a developer to produce the patterned film comprising particles comprising an AMX compound. The developer may comprise a solvent which has a dielectric constant of at least 6.0. The invention also relates to a process for producing a patterned colour conversion layer and a process for producing a device (such as a display). Further related to the invention is a device intermediate.

Provided is a negative photoresist composition for a KrF laser for semiconductor pattern formation, which includes a predetermined compound in order to improve the properties of a conventional negative photoresist, thereby realizing high transparency, high resolution and an excellent profile, even in the presence of an exposure source having a short wavelength compared to the conventional negative photoresist, and is thus suitable for use in semiconductor processing.

Monomers and polymers are provided that comprise a carbon alicyclic group or heteroalicyclic group that comprises 1) one or more acid-labile ring substituents and 2) one or more ether or thioether ring substituents. Photoresists that comprise such polymers also are provided.

Provided is a photosensitive composition for pattern formation which can provide a molded body having high photosensitivity, sufficient wear resistance, and high flexibility and high ink swelling resistance. Provided is a photosensitive composition for pattern formation comprising a block copolymer composition and a photopolymerization initiator, wherein the block copolymer composition contains a block copolymer A1 represented by specific General Formula (1) or a block copolymer A2 represented by specific General Formula (2), and the weight average molecular weight (Mw) of the entire block copolymer composition is 300,000 to 800,000.

Polyarylene resins and compositions containing them are useful as underlayers in semiconductor manufacturing processes.

A salt represented by formula (I):

##STR00001##

wherein R.sup.1 and R.sup.2 independently each represent a C6-C18 unsubstituted or substituted aromatic hydrocarbon group,
X.sup.1 represents a C1-C12 divalent aliphatic saturated hydrocarbon group in which a methylene group can be replaced by an oxygen atom or a carbonyl group, and
A.sup. represents an organic anion.

A precursor article has a substrate and a polymeric layer having a reactive composition that contains a non-crosslinked thiosulfate copolymer comprising: (a) recurring units comprising pendant thiosulfate groups, and (b) recurring units comprising pendant carboxy, carboxylate, phospho, phosphonate, phosphate, sulfo, sulfonate, or sulfite groups. The (a) recurring units are present in an amount of 1 to 30 mol %, and the (b) recurring units are present in an amount of 70 to 99 mol %. This precursor article can be used to provide a product article comprising a substrate in which the polymeric layer has both exposed regions and non-exposed regions. The exposed regions contain a pattern of electrolessly plated metal within or deposited on the surface of an at least partially crosslinked polymer that has been derived from the non-crosslinked thiosulfate copolymer. The non-exposed regions have none of the electrolessly plated metal or the non-crosslinked thiosulfate polymer.

The present polymeric materials can be patterned with relatively low photo-exposure energies and are thermally stable, mechanically robust, resist water penetration, and show good adhesion to metal oxides, metals, metal alloys, as well as organic materials. In addition, these polymeric materials can be solution-processed (e.g., by spin-coating), and can exhibit good chemical (e.g., solvent and etchant) resistance in the cured form.

The present teachings relate to a photopatternable composition including a vinylidene fluoride-based polymer, a photosensitive non-nucleophilic base, and a crosslinking agent. The photopatternable composition can be used to prepare a patterned thin film component for use in an electronic, optical, or optoelectronic device such as an organic thin film transistor. The patterned thin film component can be used as a gate dielectric with a high dielectric constant, for example, a dielectric constant greater than 10.