Patent classifications
G
PHYSICS
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G03
PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
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G03F
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR;
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7/00
Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
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G03F7/038
Macromolecular compounds which are rendered insoluble or differentially wettable
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G03F7/0384
with ethylenic or acetylenic bands in the main chain of the photopolymer
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G03F7/0384

RESIST COMPOSITION, METHOD FOR FORMING RESIST PATTERN, COMPOUND AND ACID DIFFUSION CONTROL AGENT
20260079394 · 2026-03-19 ·

A resist composition containing a resin component whose solubility in a development solution changes under the action of the acid and a compound represented by General Formula (d0). In the formula, Ar is an aromatic ring; Xd is an iodine atom, a fluorine atom, a bromine atom or a fluorinated alkyl group; Rd is a substituent; nd is an integer of 1 or more as long as the valence allows, and md is an integer of 0 or more as long as the valence allows; Ld is a single bond or a divalent linking group; m is an integer of 1 or more, and M.sup.m+ is an m-valent cation

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COMPOUND FOR PHOTOLITHOGRAPHIC MEDIUM COMPOSITION, POLYMER, AND PHOTOLITHOGRAPHIC MEDIUM COMPOSITION
20260118761 · 2026-04-30 · ·

A compound and a polymer for a photolithographic medium composition, and the photolithographic medium composition is provided. The polymer has a structural unit represented by general formula (1) below. The compound and polymer are configured for use in an etching-resistant medium layer.

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POLYMER FOR PHOTOLITHOGRAPHIC MEDIUM COMPOSITION, AND PHOTOLITHOGRAPHIC MEDIUM COMPOSITION
20260118762 · 2026-04-30 · ·

The present disclosure relates to a polymer for a photolithographic medium composition, and the photolithographic medium composition. The polymer has a structural unit represented by general formula (1) below. The polymer of the present disclosure maintains a carbon-rich structure (i.e., a polybenzene ring structure) while a sec-hydroxyl structure is introduced into the structure. The sec-hydroxyl structure can provide cross-linking sites during the film formation process of the material, which can improve the overall cross-linking density of the material, and consequently improve the etching resistance of the material. In addition, the sec-hydroxyl structure can serve as polar interaction sites, and has a strong movement ability, contributing to the improvement of the ability to interact with solvents. Thus, the solubility performance of the material is improved. The polymer of the present disclosure has excellent performance in the solubility and etching resistance, and the solubility of the polymer is improved while the etching resistance is considered. Thus, the polymer is very suitable as the material for an etching-resistant medium layer.

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