Provided is a method for producing a wiring circuit board capable of improving the dimensional accuracy of a second conductive layer. The wiring circuit board produced by the producing method includes a metal supporting layer, a first insulating layer disposed on one surface of the metal supporting layer in a thickness direction, a first conductive layer disposed on one surface of the first insulating layer in the thickness direction, a second insulating layer disposed on one surface of the first insulating layer in the thickness direction so as to cover the first conductive layer, and a second conductive layer disposed on one surface of the second insulating layer in the thickness direction. The producing method includes a step of forming the second insulating layer by bonding a film made of a photosensitive resin to one surfaces of the first insulating layer and the first conductive layer in the thickness direction.

A semiconductor device manufacturing method includes providing a first layer having a first surface, providing a second layer including a trench that exposes the first surface, onto the first layer, forming a first polymer layer that fills the trench, and performing a heat treatment process on the first polymer layer to form a second polymer layer. A second surface of the second layer is exposed by the trench, the first polymer layer includes a first portion being in contact with the first surface, and a second portion being in contact with the second surface, when the heat treatment process is performed, the first portion of the first polymer layer is decomposed, when the heat treatment process is performed, the second portion of the first polymer layer is cross-linked to form the second polymer layer, and physical properties of the first layer are different from physical properties of the second layer.

A resin composition which is configured such that if the resin composition is formed into a resin composition film that has a thickness of 3.0 μm after a heat treatment at a temperature within the range of 200-350° C., the resin composition film forms a heat-resistant resin film that has a light transmittance of 50% or more at a wavelength of 365-436 nm before the heat treatment, while having a light transmittance of 10% or less at a wavelength of 365-436 nm after the heat treatment. Provided is a resin composition having a function of absorbing ultraviolet light and visible light in a short wavelength range, which is suitable for the formation of a planarization film, an insulating layer and a partition wall that are used for organic light emitting devices or display devices.

A semiconductor device having a copper wiring and an insulating layer provided on the copper wiring, where after storage in air with a humidity of 5% for 168 hours at 150° C., the area of void portion of the copper wiring is 10% or less at the copper wiring surface in contact with the insulating layer. The insulating layer contains at least one polyimide that has (i) a structure derived from 4,4′-oxydiphthalic acid dianhydride and a structure derived from 4,4′-diaminodiphenyl ether; or (ii) a structure derived from 3,3′4,4′-biphenyltetracarboxylic acid dianhydride and a structure derived from 4,4′-diaminodiphenyl ether; or (iii) a structure derived from 4,4′-oxydiphthalic acid dianhydride and a structure derived from 2,2′-dimethyl-4,4′-diaminobiphenyl.

A method for producing a polyimide precursor having a structural unit represented by the following formula (1), comprising the following steps (i) and (ii), wherein at least one of the steps of (i) and (ii) is carried out in a solvent comprising a compound having an ether bond and an amide bond: (i) a step of reacting carboxylic anhydride with a diamine compound to obtain a polyimide precursor having a structural unit represented by the following formula (2); and (ii) a step of reacting the polyimide precursor having a structural unit represented by the formula (2) with a compound represented by the following formula (8), and reacting the reactant with a compound represented by the following formula (9) to obtain a polyimide precursor having a structural unit represented by the following formula (1): ##STR00001## wherein in the formula (1), at least one of R.sub.1 and R.sub.2 is a group represented by the formula (3): ##STR00002##

There is provided a manufacturing method for a cured substance, which makes it possible to obtain a cured substance having excellent breaking elongation, a manufacturing method for a laminate, including the manufacturing method for a cured substance, a manufacturing method for a semiconductor device, including the manufacturing method for a cured substance or the manufacturing method for a laminate, and there is provided a treatment liquid that is used in the manufacturing method for a cured substance.

The manufacturing method for a cured substance includes a film forming step of applying a resin composition containing a precursor of a cyclization resin onto a base material to form a film, a treatment step of bringing a treatment liquid into contact with the film, and a heating step of heating the film after the treatment step, in which the treatment liquid contains at least one compound selected from the group consisting of a basic compound having an amide group and a base generator having an amide group.

A negative photosensitive resin composition having a high resolution, mechanical strength, adhesion and the like, as well as excellent storage stability. A negative photosensitive resin composition, including: (A) one or more structures selected from a polyimide structure, a polyamide structure, a polybenzoxazole structure, a polyamideimide structure, and precursor structures thereof; (B) a photoacid generator; (C) one or more kinds of crosslinking agent selected from an amino condensate modified with formaldehyde or formaldehyde-alcohol, a phenol compound having on average two or more methylol groups or alkoxymethylol groups within one molecule, a compound in which a hydrogen atom of a hydroxyl group of polyhydric phenol is substituted with a glycidyl group or a group having a glycidyl group, a compound in which a hydrogen atom of a hydroxyl group of polyhydric phenol is substituted with a substituent represented by the formula (C-1), a compound represented by the formula (C-15), and a compound containing two or more nitrogen atoms having a glycidyl group represented by the formula (C-2); (D) an onium salt represented by the formula (1); and (E) a solvent.

Provided is an underlayer compound, which improves the resolution and sensitivity of a photoresist layer, restrains the collapse of a photoresist pattern and has improved etching resistance. The underlayer compound includes an alternating copolymer including a repeating unit represented by Formula 1, or an alkylated tin oxide nanocluster having a counter anion.

A resin composition contains a maleimide compound (I) that is the product of a reaction between a diamine (a-1) derived from a dimer acid and maleic anhydride, and a reactive polycarboxylic acid resin (II) that is the product of a reaction between a reactive epoxycarboxylate resin, the reactive epoxycarboxylate resin being the product of a reaction between an epoxy resin (b-1) and a compound (b-2) having a polymerizable ethylenically unsaturated group and a carboxy group together in one molecule, and a polybasic acid anhydride (b-3).

A method of manufacturing a semiconductor device includes applying a polymer mixture over a substrate, exposing and developing at least a portion of the polymer mixture to form a developed dielectric, and curing the developed dielectric to form a dielectric layer. The polymer mixture includes a polymer precursor, a photosensitizer, and a solvent. The polymer precursor may be a polyamic acid ester.