The present invention provides a photosensitive resin composition comprising: an alkali-soluble resin having a phenolic hydroxyl group as an end group (A); a radiation-polymerizable compound (B); and a photoinitiator (C), a film adhesive, an adhesive sheet, an adhesive pattern, a semiconductor wafer with an adhesive layer, and a semiconductor device using the photosensitive resin composition.

A method for improving photo resist adhesion to an underlying hard mask layer. The method includes a cleaning step that includes applying tetramethylammonium hydroxide (TMAH) to coat a hard mask layer of a wafer. The method further includes puddle developing the wafer for a first desired amount of time, and rinsing the wafer in running water for a second desired amount of time. The method further includes spin drying the wafer, and baking the wafer for a third desired amount of time. The method concludes with the proceeding of subsequent photolithographic processes on the wafer.

The present invention relates to a novel di-amine compound, a heat-resistant resin using the di-amine compound, and a resin composition using the heat-resistant resin, and a cured film excellent in chemical resistance and film properties even by a thermal treatment at a low temperature of 200 C. or less can be obtained. The novel di-amine compound is represented by the general formula (1). The heat-resistant resin composition of the present invention or the resin composition can be suitably used in a surface protective film and an interlayer dielectric film of a semiconductor device, a dielectric layer or a planarizing layer of an organic electroluminescent element (organic EL), or the like.

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(In the general formula (1), R.sup.1 and R.sup.2 each are a divalent aliphatic group, R.sup.3 and R.sup.4 each are a divalent aliphatic group, aliphatic ring group, aromatic group,
a divalent organic group bonded to an aromatic group by O, CO, SO.sub.2, CH.sub.2, C(CH.sub.3).sub.2 or C(CF.sub.3).sub.2 (wherein F is fluorine),
a divalent organic group in which two or more aromatic groups are bonded by a single bond,
or a divalent organic group in which two or more aromatic groups are bonded by O, CO, SO.sub.2, CH.sub.2, C(CH.sub.3).sub.2 or C(CF.sub.3).sub.2 (wherein F is fluorine), R.sup.5 and R.sup.6 each are an organic group having any of a hydrogen atom, a halogen atom, a hydroxyl group, a nitro group, a cyano group, an aliphatic group, an aromatic group, an acetyl group, a carboxyl group, an ester group, an amide group, an imide group, and a urea group, A is a divalent aliphatic group, aliphatic ring group, aromatic group, a divalent organic group in which two or more aromatic groups are bonded by a single bond,
or a divalent organic group in which two or more aromatic groups are bonded by O, S, CO, SO.sub.2, CH.sub.2, C(CH.sub.3).sub.2 or C(CF.sub.3).sub.2 (wherein F is fluorine),
p and q each are an integer number in the range of 0 to 3),

Disclosed and claimed herein are photoimageable dielectric compositions for dielectric passivation layers, dielectric protection layers as well as dielectric redistribution layers for use in the manufacture of semiconductors, semiconductor packages and circuit board constructions. More specifically it relates to photoimageable polymers containing vinyl groups capable of being crosslinked during processing and post cured at lower temperatures and shorter times than conventional dielectric materials. The processed compositions are characterized by low dielectric constants and low dissipation factors as well as low moisture uptake, chemical and thermal stability, flexibility and excellent HAST (Highly Accelerated Stress Test) and TCT (Thermal Cycling Test) results. The invention also relates to low dk/df dielectric compositions that are not photoimageable.

A method for fabricating a semiconductor device is described that includes forming a base layer over a top layer of a substrate, the base layer includes a silicon based dielectric having a thickness less than or equal to 5 nm and greater than or equal to 0.5 nm; forming a photoresist layer over the base layer, the photoresist including a first side and an opposite second side; exposing a first portion of the photoresist layer to a pattern of extreme ultraviolet (EUV) radiation from the first side; exposing a second portion of the photoresist layer with a pattern of electron flux from the second side, the electron flux being directed into the photoresist layer from the base layer in response to the EUV radiation; developing the exposed photoresist layer to form a patterned photoresist layer; and transferring the pattern of the patterned photoresist layer to the base layer and the top layer.

A method for improving photo resist adhesion to an underlying hard mask layer. The method includes a cleaning step that includes applying tetramethylammonium hydroxide (TMAH) to coat a hard mask layer of a wafer. The method further includes puddle developing the wafer for a first desired amount of time, and rinsing the wafer in running water for a second desired amount of time. The method further includes spin drying the wafer, and baking the wafer for a third desired amount of time. The method concludes with the proceeding of subsequent photolithographic processes on the wafer.

An EUV lithographic structure and methods according to embodiments of the invention includes an EUV photosensitive resist layer disposed directly on an oxide hardmask layer, wherein the oxide hardmask layer is doped with dopant ions to form a doped oxide hardmask layer so as to improve adhesion between the EUV lithographic structure and the oxide hardmask. The EUV lithographic structure is free of a separate adhesion layer.

A photoresist composition includes a photoresist polymer including a repeating unit to which a silicon-containing leaving group is combined, a photo-fluorine generator including a sulfonium fluoride, and a solvent.

An etch process that includes removing an oxide containing surface layer from a semiconductor surface to be etched by applying a hydrofluoric (HF) based chemistry, wherein the hydrofluoric (HF) based chemistry terminates the semiconductor surface to be etched with silicon-hydrogen bonds, and applying a vapor priming agent bearing chemical functionality based on the group consisting of alkynes, alcohols and a combination thereof to convert the silane terminated surface to a hydrophobic organic surface. The method continues with forming a photoresist layer on the hydrophobic organic surface; and patterning the photoresist layer. Thereafter, the patterned portions of the photoresist are developed to provide an etch mask. The portions of the semiconductor surface exposed by the etch mask are then etched.

The purpose of the present invention is to provide a pellicle frame with an adhesive layer with which it is possible to prevent deterioration in the flatness of the adhesive layer more effectively than before, further to moderate the stress applied by a pellicle to a photomask, and as a result to reduce pellicle induced distortion (PID). The present invention provides a pellicle frame with an adhesive layer having one end surface on which a pellicle film is provided and another end surface provided with an adhesive layer for adhesion to a photomask, wherein the adhesive layer has a thickness of 0.10 to 0.30 mm, and the adhesive layer has an adhesive force of 5?10.sup.?3 to 5?10.sup.?1 N/cm. The present invention also provides a pellicle provided with a pellicle film on the one end surface.