A photoresist composition includes a photoresist polymer including a repeating unit to which a silicon-containing leaving group is combined, a photo-fluorine generator including a sulfonium fluoride, and a solvent.

The present invention provides a resist underlayer film-forming composition for lithography for forming a resist underlayer film that can be used as a hard mask with use of hydrolysis-condensation product of a hydrolyzable silane which also absorbs K.& laser.

A resist underlayer film-forming composition for lithography comprising, as a silane, a hydrolyzable silane, a hydrolysis product thereof, or a hydrolysis-condensation product thereof, wherein the hydrolyzable silane includes a hydrolyzable silane of Formula (1):

R.sup.1.sub.aR.sup.2.sub.bSi(R.sup.3).sub.4(a+b) Formula (1)

[where R.sup.1 is an organic group of Formula (2):

##STR00001##

and is bonded to a silicon atom through a SiC bond; R.sup.3 is an alkoxy group, an acyloxy group, or a halogen group; a is an integer of 1; b is an integer of 0 to 2; and a+b is an integer of 1 to 3], and a ratio of sulfur atoms to silicon atoms is 7% by mole or more in the whole of the silane. A resist underlayer film obtained by applying the resist underlayer film-forming composition onto a semiconductor substrate and baking it.

The present invention provides a composition for forming a coating type BPSG film, which comprises: one or more structures comprising a silicic acid represented by the following general formula (1) as a skeletal structure, one or more structures comprising a phosphoric acid represented by the following general formula (2) as a skeletal structure and one or more structures comprising a boric acid represented by the following general formula (3) as a skeletal structure. There can be provided a composition for forming a coating type BPSG film which is excellent in adhesiveness in fine pattern, can be easily wet etched by a peeling solution which does not cause any damage to the semiconductor apparatus substrate, the coating type organic film or the CVD film mainly comprising carbon which are necessary in the patterning process, and can suppress generation of particles by forming it in the coating process. ##STR00001##

There is provided a composition for forming an EUV resist underlayer film which shows a good resit form. A resist underlayer film-forming composition for EUV lithography, including: polysiloxane (A) containing a hydrolyzed condensate of hydrolyzable silane (a); and hydrolyzable silane compound (b) having a sulfonamide structure, a carboxylic acid amide structure, a urea structure, or an isocyanuric acid structure. A resist underlayer film-forming composition for EUV lithography, including: polysiloxane (B) containing a hydrolyzed condensate of hydrolyzable silane (a) and hydrolyzable silane compound (b) having a sulfonamide structure, a carboxylic acid amide structure, a urea structure, or an isocyanuric acid structure. The polysiloxane (A) is preferably a co-hydrolyzed condensate of a tetraalkoxysilane, an alkyltrialkoxysilane and an aryltrialkoxysilane.

The purpose of the present invention is to provide: a resin composition, a cured product of which has extremely low residual stress and exhibits excellent adhesion to a metal substrate such as a Pt, LT or Ta substrate after a wet heat test in the fields of semiconductors and MEMS/micromachine applications; a laminate of this resin composition; and a cured product of this resin composition or the laminate. The present invention is a photosensitive resin composition which contains an epoxy resin (A), a compound having a phenolic hydroxyl group (B) and a cationic photopolymerization initiator (C), and wherein: the epoxy resin (A) has a weighted average epoxy equivalent weight of 300 g/eq. or more; 20% by mass or more of the epoxy resin (A) is an epoxy resin represented by formula (1) and having an epoxy equivalent weight of 500-4,500 g/eq.; and the compound having a phenolic hydroxyl group (B) contains a phenolic compound having a specific structure.

##STR00001##

A method of manufacturing a wire grid pattern includes providing a laminate having a base member, a metal layer disposed on the base member, a mask layer disposed on the metal layer and containing a metal oxide, an adhesive layer disposed on the mask layer, and a patterned resin layer disposed on the adhesive layer and formed by irradiation of first light; and irradiating the laminate with second light. The adhesive layer may comprise a silane coupling agent.

A photosensitive resin composition includes an alkali-soluble resin (A), a compound having an unsaturated vinyl group (B), a photo initiator (C), solvent (D) and a silane compound (E) having a structure shown as formula (I): ##STR00001## in the formula (I), A individually and independently represents a single bond, an alkylene group, or an arylene group, B individually and independently represents an organic group having diphenyl phosphine, hydrogen atom, an alkyl group, an aryl group, or OR, in which R is a C1-C6 alkyl group or a phenyl group, at least one B is the organic group having diphenyl phosphine and at least one B is OR. When B is OR, A connected to B is the single bond. A film formed by the photosensitive resin composition has good refractivity and adhesivity to molybdenum.

A resist pattern-forming method comprises applying a chemically amplified resist material on a substrate to form a resist film on the substrate. The resist film is patternwise exposed to a radioactive ray having a wavelength of no greater than 250 nm. The resist film patternwise exposed is floodwise exposed to a radioactive ray having a wavelength of greater than 250 nm. The resist film floodwise exposed is baked and developed with a developer solution comprising an organic solvent. The chemically amplified resist material comprises a component that is capable of generating a radiation-sensitive sensitizer and an acid upon an exposure. The component comprises: a radiation-sensitive sensitizer generating agent, and at least one of a radiation-sensitive acid-and-sensitizer generating agent and a radiation-sensitive acid generating agent. The radiation-sensitive sensitizer generating agent comprises a compound represented by formula (B).

##STR00001##

A photosensitive resin composition includes an alkali-soluble resin (A), a compound having an unsaturated vinyl group (B), a photo initiator (C), solvent (D) and a silane compound (E) having a structure shown as formula (I):

##STR00001## in the formula (I), A individually and independently represents a single bond, an alkylene group, or an arylene group, B individually and independently represents an organic group having diphenyl phosphine, hydrogen atom, an alkyl group, an aryl group, or OR, in which R is a C1-C6 alkyl group or a phenyl group, at least one B is the organic group having diphenyl phosphine and at least one B is OR. When B is OR, A connected to B is the single bond. A film formed by the photosensitive resin composition has good refractivity and adhesivity to molybdenum.

Embodiments in accordance with the present invention encompass negative-tone, solvent developable, self-imageable polymer compositions useful for forming films that can be patterned to create structures for microelectronic devices, microelectronic packaging, microelectromechanical systems, optoelectronic devices and displays.