The present invention provides a silicon-containing polymer which contains a repeating unit shown by the general formula (1-3) and one or more repeating units selected from repeating units shown by the general formulae (1-1) and (1-2) as a partial structure. There can be provided a composition for forming a silicon-containing resist under layer film, and a silicon-containing polymer and a silicon-containing compound to give the composition that is capable of forming a resist under layer film improved in adhesiveness in any resist pattern, regardless of negative development or positive development. ##STR00001##

A resist pattern-forming method comprises applying a chemically amplified resist material on a substrate to form a resist film on the substrate. The resist film is patternwise exposed to a radioactive ray having a wavelength of no greater than 250 nm. The resist film patternwise exposed is floodwise exposed to a radioactive ray having a wavelength of greater than 250 nm. The resist film floodwise exposed is baked and developed with a developer solution comprising an organic solvent. The chemically amplified resist material comprises a component that is capable of generating a radiation-sensitive sensitizer and an acid upon an exposure. The component comprises: a radiation-sensitive sensitizer generating agent, and at least one of a radiation-sensitive acid-and-sensitizer generating agent and a radiation-sensitive acid generating agent. The radiation-sensitive sensitizer generating agent comprises a compound represented by formula (B). ##STR00001##

A radiation-sensitive resin composition comprising a binder resin (A), radiation-sensitive compound (B), cross-linking agent (C), and silane coupling agent (D) represented by the following general formula (1) is provided. In the general formula (1), R1 to R3 respectively independently are a monovalent alkyl group having 1 to 5 carbon atoms. R4 is a divalent alkylene group having 1 to 10 carbon atoms, R5 is a hydrogen atom or monovalent alkyl group having 1 to 5 carbon atoms, and R6 to R10 are a hydrogen atom or monovalent alkyl group having 1 to 5 carbon atoms. ##STR00001##

A method for manufacturing a display device includes: applying a first solution containing (a) and (b) to a substrate containing an oxide, (a) a first functional group capable of being coordinated to the oxide, (b) a second functional group that is cleaved by being irradiated with ultraviolet light to generate any one of an amino group, a carboxyl group, a thiol group, and a selenol group; irradiating at least a part of the first solution applied to the substrate with first ultraviolet light; and applying a solution containing halogenated first quantum dots to a portion irradiated with the first ultraviolet light in the irradiating at least a part of the first solution applied to the substrate to form a first quantum dot layer.

The purpose of the present invention is to provide: a resin composition, a cured product of which has extremely low residual stress and exhibits excellent adhesion to a metal substrate such as a Pt, LT or Ta substrate after a wet heat test in the fields of semiconductors and MEMS/micromachine applications; a laminate of this resin composition; and a cured product of this resin composition or the laminate. The present invention is a photosensitive resin composition which contains an epoxy resin (A), a compound having a phenolic hydroxyl group (B) and a cationic photopolymerization initiator (C), and wherein: the epoxy resin (A) has a weighted average epoxy equivalent weight of 300 g/eq. or more; 20% by mass or more of the epoxy resin (A) is an epoxy resin represented by formula (1) and having an epoxy equivalent weight of 500-4,500 g/eq.; and the compound having a phenolic hydroxyl group (B) contains a phenolic compound having a specific structure. ##STR00001##

Provided is a photosensitive composition including a polybenzoxazole or polyimide-based polymer, a photosensitizer, a silane-based additive, and a solvent, wherein a monomer capable of increasing mechanical properties is introduced into the components of benzoxazole-based copolymer resin, and has an effect of increasing the mechanical properties and adhesion to the base of a pattern manufactured from.

A method of making a semiconductor device is provided. The method includes forming a first material layer that includes a silicon-based component having an alkyl group on a substrate, forming a photoresist layer directly on the material layer, and exposing the photoresist layer to a radiation source.

The present invention relates to photosensitive compositions containing polynorbornene (PNB) polymers and certain additives that are useful for forming microelectronic and/or optoelectronic devices and assemblies thereof, and more specifically to compositions encompassing PNBs and certain hindered phenols as additives which are capable of controlling the adhesiveness by radiation.

Embodiments in accordance with the present invention encompass positive-tone, aqueous developable, self-imageable polymer compositions useful for forming films that can be patterned to create structures for microelectronic devices, microelectronic packaging, microelectromechanical systems, optoelectronic devices and displays.

The purpose of the present invention is to provide: a photosensitive epoxy resin composition and/or a resist laminate of said resin composition that makes it possible to use photolithography to form an image having a vertical sidewall shape and fine resolution, low stress, and heat/humidity resistance; and a cured product of said resin composition and said resist laminate. The present invention is a photosensitive resin composition comprising: (A) an epoxy resin; (B) a polyphenol compound having a specific structure; (C) a photocationic polymerization initiator; and (D) an epoxy group-containing silane compound. The epoxy resin (A) comprises: an epoxy resin (a) obtained by reacting a phenol derivative that is represented by formula (1) with an epihalohydrin; and an epoxy resin (b) that is represented by formula (2). ##STR00001##