The present invention is related to a surface control additive for a radiation curing system, the method for its preparation as well as its application. The surface control additive has the following structure: ##STR00001##
wherein A is ##STR00002##
wherein m is an integer from 0 to 400, n is an integer from 1 to 500, x is an integer from 0 to 800, p is an integer from 0 to 600, q is an integer from 1 to 800, R.sup.4 and R.sup.5 are H or CH.sub.3 respectively, R.sup.6 is H or a linear or a branched alkyl group containing 1-18 carbon atoms or an acyl group containing 2-5 carbon atoms. The surface control additive of the present invention is applied to radiation curing (UV/EB) paint and inks, enables the coatings to maintain non-adhesive and smooth for a long time, and minimizes transferable precipitates from a cured film. In addition, by using different combinations of EO and PO, the surface control additive of the present invention can adapt to a free selection from high-polarity aquosity to a low-polarity aliphatic hydrocarbon solvent system.

Provided is a silicon-containing layer forming composition for forming a silicon-containing layer which exhibits an anti-reflective function during exposure in a multilayer resist process and, during dry etching, shows a high etching rate against a plasma of fluorine-based gas and a low etching rate against a plasma of oxygen-based gas. The silicon-containing layer forming composition includes a polysiloxane compound having a structural unit of the formula: [(R.sup.1).sub.bR.sup.2.sub.mSiO.sub.n/2] and a solvent. In the formula, R.sup.1 is a group represented by the following formula:

##STR00001##

(where a is an integer of 1 to 5; and a wavy line means that a line which the wavy line intersects is a bond); R.sup.2 is each independently a hydrogen atom, a C.sub.1-C.sub.3 alkyl group, a phenyl group, a hydroxy group, a C.sub.1-C.sub.3 alkoxy group or a C.sub.1-C.sub.3 fluoroalkyl group; b is an integer of 1 to 3; m is an integer of 0 to 2; n is an integer of 1 to 3; and a relationship of b+m+n=4 is satisfied.

A composition comprising a carbosilane polymer formed from at least one carbosilane monomer and at least one carbonyl contributing monomer. In some embodiments, the composition is suitable as gap filling and planarizing material, and may optionally include at least one chromophore for photolithography applications.

Techniques for EUV resist pattern transfer using a graded hardmask are provided. In one aspect, a method of patterning is provided. The method includes: forming a graded hardmask on a device stack; depositing a resist onto the graded hardmask; patterning the resist to form a pattern in the resist having at least one feature; modifying at least one surface region to increase an etch rate of the graded hardmask; transferring the pattern from the resist to the graded hardmask; and transferring the pattern from the graded hardmask to at least one underlying layer of the device stack. A device structure formed by the patterning method is also provided.

A material for forming an organic film contains a polymer having a repeating unit shown by the following general formula (1), and an organic solvent, where AR1 and AR2 each represent a benzene ring or a naphthalene ring which optionally have a substituent; W.sub.1 represents a divalent organic group having 2 to 20 carbon atoms and no aromatic ring, and a methylene group constituting the organic group is optionally substituted with an oxygen atom or a carbonyl group; and W.sub.2 represents a divalent organic group having 6 to 80 carbon atoms and at least one or more aromatic rings. This invention provides: an organic film material being excellent in film formability and enabling high etching resistance and excellent twisting resistance and filling property; a patterning process using this material; and a polymer suitable for such an organic film material. ##STR00001##

The material for forming an underlayer film for lithography of the present invention contains a compound represented by the following general formula (1). ##STR00001##
(in formula (1), each X independently represents an oxygen atom or a sulfur atom, R.sup.1 represents a single bond or a 2n-valent hydrocarbon group having 1 to 30 carbon atoms, the hydrocarbon group may have a cyclic hydrocarbon group, a double bond, a hetero atom or an aromatic group having 6 to 30 carbon atoms, and each R.sup.2 independently represents a linear, branched or cyclic alkyl group having 1 to 10 carbon atoms, an aryl group having 6 to 10 carbon atoms, an alkenyl group having 2 to 10 carbon atoms, or a hydroxyl group, provided that at least one R.sup.2 represents a hydroxyl group, each m is independently an integer of 1 to 4, n is an integer of 1 to 4, and p is 0 or 1.)

A composition for forming a film capable of effectively functioning as a resist underlayer film exhibiting resistance to a solvent in a composition for forming a resist film serving as an upper layer, favorable etching property to a fluorine-containing gas, and favorable lithographic property. A film-forming composition including a hydrolysis condensate prepared through hydrolysis and condensation of a hydrolyzable silane compound by using two or more acidic compounds, and a solvent, the film-forming composition being characterized in that: the hydrolyzable silane compound contains an amino-group-containing silane of the following Formula (1):

R.sup.1.sub.aR.sup.2.sub.bSi(R.sup.3).sub.4−(a+b)  (1)

The composition contains a compound and a solvent. The compound includes a group represented by formula (1). The compound has a molecular weight of no less than 200 and has a percentage content of carbon atoms of no less than 40% by mass. In the formula (1), R.sup.1 and R.sup.2 each independently represent a hydrogen atom, a fluorine atom, a monovalent hydrocarbon group having 1 to 20 carbon atoms or a monovalent fluorinated hydrocarbon group having 1 to 20 carbon atoms, or R.sup.1 and R.sup.2 taken together represent a part of an alicyclic structure having 3 to 20 ring atoms constituted together with the carbon atom to which R.sup.1 and R.sup.2 bond; Ar.sup.1 represents a group obtained by removing (n+3) hydrogen atoms from an arene or heteroarene having 6 to 20 ring atoms; and X represents an oxygen atom, —CR.sup.3R.sup.4—, —CR.sup.3R.sup.4—O— or —O—CR.sup.3R.sup.4—. ##STR00001##

R.sup.1.sub.aR.sup.2.sub.bSi(R.sup.3).sub.4−(a+b)   (1)

A composition for a silicon-containing resist underlying film and for forming a resist underlying film that can be removed by a conventional method employing dry etching, but also by a method employing wet etching using a chemical liquid in a step for processing a semiconductor substrate or the like; and a composition for forming a resist underlying film for lithography and for forming a resist underlying film that has excellent storage stability and produces less residue in a dry etching step. A composition for forming a resist underlying film, the composition including a hydrolysis condensate of a hydrolysable silane mixture containing an alkyltrialkoxy silane and a hydrolysable silane of formula (1), wherein the contained amount of the alkyltrialkoxy silane in the mixture is 0 mol % or more but less than 40 mol % with respect to the total amount by mole of all of the hydrolysable silane contained in the mixture.

A photosensitive resin composition comprising (A) a silphenylene and polyether structure—containing polymer and (B) a photoacid generator is coated onto a substrate to form a photosensitive resin coating which has improved substrate adhesion, a pattern forming ability, crack resistance, and reliability as protective film.