A process for the modification of a solid material, said process comprising contacting a surface of the solid material comprising nucleophilic groups with a hydrosilane in a first step to produce a hydrosilanized surface, and contacting said hydrosilanized surface with at least one alkene and/or alkyne under irradiation with visible and/or ultraviolet light in a second step.

The present invention provides a curable composition which is suitably used for the production of a light-shielding film which has excellent light-shielding properties, exhibits low reflectivity, has excellent pattern linearity, and is not susceptible to chipping; an infrared cut filter with a light-shielding film; and a solid-state imaging device. The curable composition according to the present invention includes a curable compound which has at least one selected from the group consisting of a fluorine atom, a silicon atom, a linear alkyl group having 8 or more carbon atoms, and a branched alkyl group having 3 or more carbon atoms, and a curable functional group; a silane coupling agent; and a black pigment.

Disclosed is a fluorine-containing composition containing a fluorine-containing compound represented by general formula (1) and a fluorine-based solvent.

##STR00001##

Methods are disclosed to prepare permanent materials that can be coated onto microelectronic substrates or used for other structural or optical applications. The permanent materials are thermally stable to at least 300° C., cure using a photo or thermal process, exhibit good chemical resistance (including during metal passivation), and have a lifespan of at least 5 years, preferably at least 10 years, in the final device. Advantageously, these materials can also be bonded at room temperature. The materials exhibit no movement or squeeze-out after bonding and adhere to a variety of substrate types. A chip-to-chip, chip-to-wafer, and/or wafer-to-wafer bonding method utilizing this material is also described.

The invention provides a photosensitive resin composition, a color filter, and a liquid crystal display element thereof. The photosensitive resin composition includes an alkali-soluble resin (A), a compound (B) having an ethylenically unsaturated group, a photoinitiator (C), a solvent (D), and a black pigment (E). The compound (B) having an ethylenically unsaturated group contains a compound (B-1) having an acidic group and at least three ethylenically unsaturated groups. The photoinitiator (C) includes a photoinitiator (C-1) represented by formula (1).

##STR00001##

A photoresist composition, comprising: from 0.1 to 1.0 parts of a polyether-modified organosilicon levelling agent 58; from 7 to 23 parts of a polyfunctional monomer; from 13 to 29 parts of a alkaline soluble resin; from 23 to 62.8 parts of a pigment dispersion; from 1.5 to 11.9 parts of a photo-initiator; and from 10 to 45 parts of a solvent, on the basis of parts by weight. The photoresist composition can solve the problem of poor levelling property of the coating film and shrinkage of the film surface after high temperature baking occurring in the existing photoresist composition.

Provided is a resin composition for imprinting excellent in imprint properties and optical properties such as high refractive index and low haze. The invention relates to a resin composition for imprinting containing: (A) a polysiloxane resin represented by the following formula (1): (R.sup.1SiO.sub.3/2).sub.a(R.sup.2.sub.2SiO.sub.2/2).sub.b(R.sup.3.sub.3SiO.sub.1/2).sub.c(SiO.sub.4/2).sub.d wherein R.sup.1, R.sup.2, and R.sup.3 are each independently a hydrogen atom, a hydroxy group, an alkoxy group, a C1-C12 hydrocarbon group, or a C1-C12 substituent having one or more crosslinkable functional groups, with at least one of R.sup.1, R.sup.2, or R.sup.3 being a C1-C12 substituent having one or more crosslinkable functional groups, and when a plurality of R.sup.1s, R.sup.2s, or R.sup.3s are present, they may be different from one another; and a, b, c, and d are numbers satisfying the following conditions: 0.001≤a≤1.00, 0≤b≤0.999, 0≤c≤0.30, 0≤d≤0.30, and a+b+c+d=1.0; and (B) a fine particulate inorganic oxide, wherein the ratio by weight of the sum of the polysiloxane resin (A) and optionally an alkoxysilane compound and a curable resin to the fine particulate inorganic oxide (B) is 0.2 to 2.5.

According to one embodiment, a photosensitive composition includes a great number of photosensitive core-shell type nano-particles each including a core and a shell and having a structure that the core is metal oxide particle and covered by the shell. The shell includes a) unsaturated carboxylic acid or unsaturated carboxylate, which is a negatively ionized unsaturated carboxylic acid, and b) silylated unsaturated carboxylic acid or unsaturated carboxylate which is negatively ionized silylated unsaturated carboxylic acid.

A novel imprint material and film produced from the material, on which a pattern is transferred. An imprint material having: a component (A); a component (B); a component (C); and a component (D), wherein, (A): a compound of Formula (1), Formula (2), or Formula (3):

##STR00001##

wherein, X is C.sub.1-5 linear alkylene, R.sup.1 is H or CH.sub.3; each of R.sup.2, R.sup.3, and R.sup.4 is independently H, CH.sub.3, or C.sub.2H.sub.5; and the sum of the number of carbon atoms on R.sup.2, R.sup.3, and R.sup.4 is 0 to 2; (B): a silsesquioxane compound having a repeating unit of Formula (4), and having two or more polymerizable groups of Y; (C): a silicone compound having a repeating unit of Formula (5), and having two polymerizable groups on its ends:

##STR00002##

wherein, each of R.sup.6 and R.sup.7 is independently C.sub.1-3 alkyl; R.sup.5 is C.sub.1-3 alkylene; and k is 0 to 3; and (D): photopolymerization initiator.

A photoresist composition and methods of using the same are disclosed. The photoresist includes a polymer backbone, an acid labile group (ALG) chemically bonded to the polymer backbone, a photo-acid generator (PAG), a solvent, and a silicon-containing unit that is chemically bonded to one of: the ALG and a crosslinker. A method of using the photoresist composition includes forming a layer of the photoresist over a substrate, performing an exposing process to the photoresist layer; and developing the photoresist layer, thereby forming a patterned photoresist layer. The patterned photoresist layer includes the silicon-containing unit.