Patent classifications
G03F7/092
METHOD TO ENHANCE LITHOGRAPHY PATTERN CREATION USING SEMICONDUCTOR STRESS FILM TUNING
Aspects of the present disclosure provide a method for optimizing wafer shape. For example, the method can include receiving a wafer having a working surface for one or more devices to be fabricated thereon and a backside surface opposite to the working surface, measuring the wafer to identify bow measurement of the wafer, and forming a first stress-modification film on the backside surface. The first stress-modification film can be reactive to a first wavelength of light in that exposure to the first wavelength of light modifies an internal stress of the first stress-modification film. The method can further include exposing the first stress-modification film to a pattern of the first wavelength of light to modify the internal stress of the first stress-modification film. The pattern of the first wavelength of light corresponds to the bow measurement.
ON-PRESS DEVELOPMENT TYPE LITHOGRAPHIC PRINTING PLATE PRECURSOR, METHOD FOR PREPARING LITHOGRAPHIC PRINTING PLATE, AND LITHOGRAPHIC PRINTING METHOD
Provided is an on-press development type lithographic printing plate precursor having a support and an image-recording layer on the support, in which the image-recording layer contains a compound A that has a partial structure satisfying Δd≥15.5 wherein δd is a value of a dispersion element in the Hansen solubility parameters, and a content of the partial structure satisfying Δd≥15.5 in the compound A is 50% by mass or more with respect to a total mass of the compound. Also provided is a method of preparing lithographic printing plate or a lithographic printing method using the lithographic printing plate precursor.
LITHOGRAPHIC PRINTING PLATE PRECURSORS AND METHOD OF USE
Lithographic printing plate precursors are prepared with a unique aluminum-containing substrate prepared using two separate anodizing processes to provide an inner aluminum oxide layer of average dry thickness (T.sub.i) of 300-3,000 nm and a multiplicity of inner micropores of average inner micropore diameter (D.sub.i) of ≤100 nm. An outer aluminum oxide layer is also provided to have a multiplicity of outer micropores of average outer micropore diameter (D.sub.o) of 15-30 nm and a dry thickness (T.sub.o) of 30-650 nm. A hydrophilic layer disposed on the outer aluminum oxide layer at 0.0002-0.1 g/m.sup.2 has at least a hydrophilic copolymer composed of (a) recurring units having an amide group and (b) recurring units comprising an —OM group directly connected to a phosphorus atom, wherein M represents a hydrogen, sodium, potassium, or aluminum atom.
EUV patterning of monolayers for selective atomic layer deposition
A patterning method is described that utilizes self-assembled monolayers (SAMs) formed with hydroxamic acid compounds and area selective atomic layer deposition (ALD). In the examples, regions of the SAM exposed to extreme ultraviolet radiation (EUV) become resistant to ALD deposition. Subsequent treatment of the exposed SAM to an ALD process results in selective growth of an ALD film on the non-exposed regions of the SAM, leaving the exposed regions substantially free of ALD material.
A LITHOGRAPHIC PRINTING PLATE PRECURSOR
A lithographic printing plate precursor including a photopolymerisable coating and an overcoat layer provided on top of said layer, characterized in that the overcoat layer includes a compound comprising at least one moiety having a structure according to Formula (I): (I).
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Patterning material film stack with metal-containing top coat for enhanced sensitivity in extreme ultraviolet (EUV) lithography
A lithographic patterning method includes forming a multi-layer patterning material film stack on a semiconductor substrate, the patterning material film stack including a resist layer formed over one or more additional layers, and forming a metal-containing top coat over the resist layer. The method further includes exposing the multi-layer patterning material film stack to patterning radiation through the metal-containing top coat to form a desired pattern in the resist layer, removing the metal-containing top coat, developing the pattern formed in the resist layer, etching at least one underlying layer in accordance with the developed pattern, and removing remaining portions of the resist layer. The metal-containing top coat can be formed, for example, by atomic layer deposition or spin-on deposition over the resist layer, or by self-segregation from the resist layer.
Touch panel and method of manufacturing the same
A touch panel and method of manufacturing the same are disclosed. In one aspect, the touch panel includes a substrate, a first touch electrode line formed over the substrate and including a plurality of first touch electrodes which are electrically connected to each other, and a second touch electrode line formed to cross the first touch electrode line and being electrically insulated therefrom. The second touch electrode line can include a plurality of second touch electrodes which are electrically connected to each other. The touch panel can also include a plurality of connecting wires respectively connected to the first and second touch electrode lines. At least one of the first touch electrode line, the second touch electrode line, and the connecting wires can include at least one photosensitive conductive layer having a metal nanowire.
SURFACE TREATMENT TO PHOTOSENSITIVE LAYER
A method includes forming a tri-layer structure over a substrate, in which the tri-layer structure includes a bottom layer, a middle layer over the bottom layer and a photosensitive layer, patterning the photosensitive layer, performing a surface treatment on the patterned photosensitive layer to form a protection layer at least on a sidewall of the patterned photosensitive layer, patterning the middle layer after performing the surface treatment, patterning the bottom layer, and etching the substrate.
Lithographic printing plate precursor and method of use
IR-sensitive lithographic printing plate precursors provide a stable print-out image using a unique IR radiation-sensitive composition. This IR radiation-sensitive composition includes: a) free radically polymerizable component; an b) IR radiation absorber; c) an initiator composition; a d) borate compound; and a e) compound capable of forming a colored boronic complex during or after exposure of the infrared radiation-sensitive image-recording layer to infrared radiation. The resulting print-out image exhibits an excellent color contrast between the exposed and non-exposed regions. After IR imaging, these precursors can be developed off-press or on-press.
Composition of spin-on materials containing metal oxide nanoparticles and an organic polymer
A coating composition, and uses thereof, including a solvent, metal oxide nanoparticles dispersed in this solvent, and a high carbon polymer dissolved in this solvent, where the high carbon polymer includes a repeat unit of structure (1), a hydroxybiphenyl repeat unit of structure (2) and a moiety containing a fused aromatic containing moiety of structure (3) where R.sub.1 and R.sub.2 are independently selected from the group of hydrogen, an alkyl and a substituted alkyl, Ar is an unsubstituted or substituted fused aromatic ring and X.sub.1 is an alkylene spacer, or a direct valence bound. ##STR00001##