A method for manufacturing a component carrier is disclosed. The method includes the steps of providing a layer stack having at least one component carrier material, forming a photoimageable dielectric layer structure on the layer stack, forming a spatial pattern of an electrically conductive layer structure on the photoimageable dielectric layer structure, wherein the spatial pattern defines openings formed within the electrically conductive layer structure, and exposing the photoimageable dielectric layer structure to electromagnetic radiation, where the spatial pattern of the electrically conductive layer structure represents a mask for selectively exposing predefined regions of the photoimageable dielectric layer structure. Furthermore, the method includes selectively removing material from the photoimageable dielectric layer depending on the spatial pattern.

A patterning method and a method for manufacturing an array substrate are provided, and the patterning method includes: forming a photolithography auxiliary film and a positive photoresist film in turn on a base substrate provided with a layer to be patterned; subjecting the photolithography auxiliary film and the positive photoresist film to a photolithography process to form a photolithography auxiliary layer pattern and a positive photoresist pattern; patterning the layer to be patterned; and UV irradiating the photolithography auxiliary layer pattern and the positive photoresist pattern and then removing the photolithography auxiliary layer pattern and the positive photoresist pattern.

A method of manufacturing an integrated circuit (IC) device, the method including forming an underlayer on a feature layer such that the underlayer includes an acid generator; forming an acid-containing underlayer by generating a first acid from the acid generator; forming a photoresist film on the acid-containing underlayer; generating a second acid in a first area of the photoresist film by exposing the first area of the photoresist film; diffusing the first acid from the acid-containing underlayer into the first area of the photoresist film; and forming a photoresist pattern by developing the photoresist film.

An exposure apparatus for transferring a pattern of a reticle onto a wafer is provided. The exposure apparatus includes an illumination module, a reticle stage, a projection module, a wafer stage, and a control unit. The control unit is configured to calculate an alignment setting of the reticle. The wafer includes a first layer and a second layer disposed on the first layer. The first layer includes a first alignment parameter. The second layer includes a second alignment parameter. The control unit obtains a first weighting factor predetermined according to a property of the first layer, and a second weighting factor predetermined according to a property of the second layer. The alignment setting of the reticle is calculated according to the first alignment parameter, the first weighting factor, the second alignment parameter, and the second weighting factor.

There are provided a method of manufacturing a cured film, including a first exposure step of exposing a part of a photocurable film formed from a photocurable resin composition, a development step of developing the photocurable film after the exposure with a developing solution to obtain a pattern, and a second exposure step of exposing the pattern with light including light having a wavelength different from a wavelength of light used in the first exposure step, where the photocurable resin composition has a specific constitution, a photocurable resin composition that is used in the method of manufacturing the cured film, a method of manufacturing a laminate including the method of manufacturing a cured film, and a method of manufacturing an electronic device, which includes the method of manufacturing the cured film.

Disclosed are methods of forming a pattern and methods of fabricating a semiconductor device. A method of fabricating a semiconductor device may include providing a substrate comprising a resist layer on the substrate and coating a compound on the resist layer to form a charge dissipation layer. The charge dissipation layer may include a conductive polymer and a metal complex.

Disclosed are methods of forming a pattern and methods of fabricating a semiconductor device. A method of fabricating a semiconductor device may include providing a substrate comprising a resist layer on the substrate and coating a compound on the resist layer to form a charge dissipation layer. The charge dissipation layer may include a conductive polymer and a metal complex.

Embodiments of the present disclosure generally relate to methods for providing real-time characterization of photoresist properties. In some embodiments, a method of preparing a patterned photoresist on a substrate includes forming an unpatterned photoresist on the substrate, exposing the unpatterned photoresist to a first dose of EM radiation at a first location on the unpatterned photoresist with a first light source, and measuring an optical property of the unpatterned photoresist and exposing the unpatterned photoresist to a second dose of EM radiation at the first location on the unpatterned photoresist to create a patterned or partially patterned photoresist. The second dose of EM radiation has a greater wavelength, a greater number of pulses, or a longer exposure period than the first dose of EM radiation with a second light source. Also, at least one of the first light source and the second light source is an on-board metrology device.

The invention relates to a method and a device for the exposure of a photosensitive coating.

The invention relates to a method and a device for the exposure of a photosensitive coating.