A method of making a semiconductor device is provided. The method includes forming a photoresist material over a substrate, the photoresist material having a polymer that includes a backbone having a segment and a linking group, the segment including a carbon chain and an ultraviolet (UV) curable group, the UV curable group coupled to the carbon chain and to the linking group; performing a first exposure process that breaks the backbone of the polymer via decoupling the linking group from the connected UV curable group of each segment; performing a second exposure process to form a patterned photoresist layer; and developing the patterned photoresist layer.

A method of making a semiconductor device is provided. The method includes forming a photoresist material over a substrate, the photoresist material having a polymer that includes a backbone having a segment and a linking group, the segment including a carbon chain and an ultraviolet (UV) curable group, the UV curable group coupled to the carbon chain and to the linking group; performing a first exposure process that breaks the backbone of the polymer via decoupling the linking group from the connected UV curable group of each segment; performing a second exposure process to form a patterned photoresist layer; and developing the patterned photoresist layer.

In a pattern formation method, a bottom layer is formed over an underlying layer. A middle layer is formed over the bottom layer. A resist pattern is formed over the middle layer. The middle layer is patterned by using the resist pattern as an etching mask. The bottom layer is patterned by using the patterned middle layer. The underlying layer is patterned. The middle layer contains silicon in an amount of 50 wt % or more and an organic material. In one or more of the foregoing and following embodiments, an annealing operation is further performed after the middle layer is formed.

In a pattern formation method, a bottom layer is formed over an underlying layer. A middle layer is formed over the bottom layer. A resist pattern is formed over the middle layer. The middle layer is patterned by using the resist pattern as an etching mask. The bottom layer is patterned by using the patterned middle layer. The underlying layer is patterned. The middle layer contains silicon in an amount of 50 wt % or more and an organic material. In one or more of the foregoing and following embodiments, an annealing operation is further performed after the middle layer is formed.

A resist underlayer composition and a method of forming patterns, the composition including a polymer including at least one of a first moiety represented by Chemical Formula 1-1 and a second moiety represented by Chemical Formula 1-2; a thermal acid generator including a salt composed of an anion of an acid and a cation of a base, the base having pKa of greater than or equal to about 7; and a solvent,

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A method of recording multiple holograms into a holographic recording medium includes exposing the medium to a first light to cause changes in a first refractive index of at least a portion of a first layer of the medium to write a first hologram in the first layer without changing a second refractive index of a second layer of the recording medium. The method also includes exposing the medium to a second light to cause changes in a second refractive index of at least a portion of the second layer to write a second hologram in the second layer. The first layer may include a first photo-polymerizable composition polymerizable by the first light, and the second layer may include a second photo-polymerizable composition polymerizable by the second light and not polymerizable by the first light.

A method of recording multiple holograms into a holographic recording medium includes exposing the medium to a first light to cause changes in a first refractive index of at least a portion of a first layer of the medium to write a first hologram in the first layer without changing a second refractive index of a second layer of the recording medium. The method also includes exposing the medium to a second light to cause changes in a second refractive index of at least a portion of the second layer to write a second hologram in the second layer. The first layer may include a first photo-polymerizable composition polymerizable by the first light, and the second layer may include a second photo-polymerizable composition polymerizable by the second light and not polymerizable by the first light.

A transfer film has a temporary support and a photosensitive composition layer, in which the photosensitive composition layer includes a photopolymerization initiator, an alkali-soluble resin, and a polymerizable compound, the photopolymerization initiator includes a first photopolymerization initiator and a second photopolymerization initiator, a molar absorption coefficient ε1 of the first photopolymerization initiator at a wavelength of 365 nm is 500 L/mol.Math.cm or more, and a ratio of a molar absorption coefficient ε2 of the second photopolymerization initiator at a wavelength of 365 nm to a molar absorption coefficient ε3 of the second photopolymerization initiator at a wavelength of 313 nm is 0.200 or less.

A method for manufacturing a semiconductor device includes forming a resist underlayer over a substrate. The resist underlayer includes an underlayer composition, including: a polymer with pendant photoacid generator (PAG) groups, pendant thermal acid generator (TAG) groups, a combination of pendant PAG and pendant TAG groups, pendant photobase generator (PBG) groups, pendant thermal base generator (TBG) groups, or a combination of pendant PBG and pendant TBG groups. A photoresist layer including a photoresist composition is formed over the resist underlayer. The photoresist layer is selectively exposed to actinic radiation. The selectively exposed photoresist layer is developed to form a pattern in the photoresist layer.

A resist underlayer composition and a method of forming patterns, the composition including a polymer including at least one of a first moiety represented by Chemical Formula 1-1 and a second moiety represented by Chemical Formula 1-2; a thermal acid generator including a salt composed of an anion of an acid and a cation of a base, the base having pKa of greater than or equal to about 7; and a solvent, ##STR00001##