There is provided a resist overlayer film forming composition for use in a lithography process in semiconductor device production, which does not intermix with a resist, blocks undesirable exposure light particularly in EUV exposure, for example, UV and DUV and selectively transmits EUV alone, and which can be developed with a developer after exposure. A resist overlayer film forming composition comprising: a polymer including an organic group including a linear or branched saturated alkyl group having a carbon atom number of 1 to 10, in which some or all of hydrogen atoms thereof are substituted with fluorine atoms, and an optionally substituted C.sub.8-16 ether compound as a solvent.

The present disclosure provides a method for manufacturing a semiconductor structure. The method includes forming a photo-sensitive layer on a first surface of a semiconductor substrate. The photo-sensitive layer has a top surface. The method also includes obtaining a first profile of the first surface of the semiconductor substrate, and obtaining a second profile of the top surface of the photo-sensitive layer. The method also includes calculating a vertical displacement profile of the semiconductor substrate according to the first profile and the second profile. An apparatus for manufacturing a semiconductor structure is also disclosed.

The present disclosure provides a method for manufacturing a semiconductor structure. The method includes forming a photo-sensitive layer on a first surface of a semiconductor substrate. The photo-sensitive layer has a top surface. The method also includes obtaining a first profile of the first surface of the semiconductor substrate, and obtaining a second profile of the top surface of the photo-sensitive layer. The method also includes calculating a vertical displacement profile of the semiconductor substrate according to the first profile and the second profile. An apparatus for manufacturing a semiconductor structure is also disclosed.

Methods and systems for PS-CAR photoresist simulation are described. In an embodiment, a method includes determining by simulation at least one process parameter of a lithography process using a radiation-sensitive material. In such an embodiment, the radiation-sensitive material includes: a first light wavelength activation threshold that controls the generation of acid to a first acid concentration in the radiation-sensitive material and controls generation of photosensitizer molecules in the radiation-sensitive material, and a second light wavelength activation threshold that can excite the photosensitizer molecules in the radiation-sensitive material that results in the acid comprising a second acid concentration that is greater than the first acid concentration, the second light wavelength being different from the first light wavelength. In such an embodiment, the method also includes performing a lithography process using the previously-determined at least one process parameter.

A method of making a relief image printing element comprising a plurality of relief printing dots. The method includes the steps of: (a) providing at least one photocurable layer disposed on the backing layer, the at least one photocurable layer being capable of being selectively crosslinked and cured upon exposure to actinic radiation, (b) imagewise exposing the at least one photocurable layer to actinic radiation to selectively crosslink and cure portions of the at least one photocurable layer; and (c) developing the relief image printing element to separate and remove uncrosslinked and uncured portions of the at least one photocurable layer to reveal the relief image therein. The at least one photocurable layer comprises (i) an ethylenically unsaturated monomer; (ii) a binder; and (iii) a photoinitiator exhibiting a quantum yield of initiation (Qi) of more than 0.05 at a 365 nm wavelength.

A method of making a relief image printing element comprising a plurality of relief printing dots. The method includes the steps of: (a) providing at least one photocurable layer disposed on the backing layer, the at least one photocurable layer being capable of being selectively crosslinked and cured upon exposure to actinic radiation, (b) imagewise exposing the at least one photocurable layer to actinic radiation to selectively crosslink and cure portions of the at least one photocurable layer; and (c) developing the relief image printing element to separate and remove uncrosslinked and uncured portions of the at least one photocurable layer to reveal the relief image therein. The at least one photocurable layer comprises (i) an ethylenically unsaturated monomer; (ii) a binder; and (iii) a photoinitiator exhibiting a quantum yield of initiation (Qi) of more than 0.05 at a 365 nm wavelength.

Embodiments of this disclosure provide a photoresist structure, a patterned deposition layer, a semiconductor chip and a manufacturing method thereof According to the method for manufacturing a photoresist structure, a single photoresist is used, a second photoresist layer having an undercut can be obtained by only one development process using a single developing solution, and the size of the undercut can be controlled by the development time, thereby solving the problems such as difficulty in lift-off caused by adhesion of the deposited material to the sidewall of the photoresist structure in traditional lift-off processes.

Techniques regarding lithographic processes for fabricating Josephson junctions are provided. For example, one or more embodiments described herein can comprise a method that can include depositing a first resist layer onto a second resist layer. The first resist layer can include a bridge portion that defines an opening for forming a Josephson junction. The method can also comprise depositing a third resist layer onto the bridge portion. The third resist layer can shield the opening from an angled deposition of a superconducting material during fabrication of the Josephson junction.

The present disclosure provides a method for lithography patterning in accordance with some embodiments. The method includes forming a photoresist layer over a substrate; performing an exposing process to the photoresist layer; and developing the photoresist layer, thereby forming a patterned photoresist layer. The photoresist layer includes a polymer backbone, an acid labile group (ALG) bonded to the polymer backbone, a first sensitizer that is bonded to the polymer backbone, a second sensitizer that is not bonded to the polymer backbone, and a photo-acid generator (PAG).

Organic coating compositions, particularly antireflective coating compositions, are provided that can be developed with an aqueous alkaline developer, including in a single step during development of an overcoated photoresist layer. Preferred coating compositions comprise a tetrapolymer that comprises at least four distinct functional groups.