A photosensitive resin composition is provided comprising 100 pbw of a polyimide silicone containing a primary alcoholic hydroxyl group, a crosslinker, a photoacid generator, a polyfunctional epoxy compound, 1-70 pbw of a filler having an average particle size of 0.01-20.0 m, and 0.01-30 pbw of a colorant. The resin composition is colored and photosensitive and cures into a product having an improved modulus.

An object of the invention is to provide an aluminum support for a planographic printing plate and a planographic printing plate precursor which can be used to obtain a plate precursor for a planographic printing plate that is excellent in terms of plate wear resistance in the case of being used to produce a planographic printing plate and exhibits excellent on-machine developability. In an aluminum support for a planographic printing plate of the embodiment of the invention, an average value of surface area-increase rates S.sub.SEM (%) is 200% or more, and an average value of pit depths h.sub.SEM (nm) is 400 nm or less.

An object of the invention is to provide an aluminum support for a planographic printing plate and a planographic printing plate precursor which can be used to obtain a plate precursor for a planographic printing plate that is excellent in terms of plate wear resistance in the case of being used to produce a planographic printing plate and exhibits excellent on-machine developability. In an aluminum support for a planographic printing plate of the embodiment of the invention, an average value of surface area-increase rates S.sub.SEM (%) is 200% or more, and an average value of pit depths h.sub.SEM (nm) is 400 nm or less.

The present disclosure relates to a photosensitive resin composition for a permanent resist, the photosensitive resin composition including: (A) an acid-modified vinyl group-containing resin; (B) a photopolymerization initiator; and (C) a photopolymerizable compound, in which the photopolymerizable compound includes a photopolymerizable compound having four or more ethylenically unsaturated groups and a photopolymerizable compound having three or fewer ethylenically unsaturated groups.

The present disclosure relates to a photosensitive resin composition for a permanent resist, the photosensitive resin composition including: (A) an acid-modified vinyl group-containing resin; (B) a photopolymerization initiator; and (C) a photopolymerizable compound, in which the photopolymerizable compound includes a photopolymerizable compound having four or more ethylenically unsaturated groups and a photopolymerizable compound having three or fewer ethylenically unsaturated groups.

An EUV lithographic structure includes an EUV photosensitive resist layer disposed on a hardmask layer, wherein the EUV lithographic structure is free of an antireflective coating. An organic adhesion layer can be provided between the hardmask layer and the EUV photosensitive resist layer. The hardmask layer can include an uppermost oxide hardmask layer, an intermediate hardmask layer, and a lowermost oxide hardmask layer, wherein the EUV photosensitive resist layer is disposed on the uppermost oxide hardmask layer. Also described are methods for patterning the EUV lithographic structures.

An EUV lithographic structure includes an EUV photosensitive resist layer disposed on a hardmask layer, wherein the EUV lithographic structure is free of an antireflective coating. An organic adhesion layer can be provided between the hardmask layer and the EUV photosensitive resist layer. The hardmask layer can include an uppermost oxide hardmask layer, an intermediate hardmask layer, and a lowermost oxide hardmask layer, wherein the EUV photosensitive resist layer is disposed on the uppermost oxide hardmask layer. Also described are methods for patterning the EUV lithographic structures.

An EUV lithographic structure includes an EUV photosensitive resist layer disposed on a hardmask layer, wherein the EUV lithographic structure is free of an antireflective coating. An organic adhesion layer can be provided between the hardmask layer and the EUV photosensitive resist layer. The hardmask layer can include an uppermost oxide hardmask layer, an intermediate hardmask layer, and a lowermost oxide hardmask layer, wherein the EUV photosensitive resist layer is disposed on the uppermost oxide hardmask layer. Also described are methods for patterning the EUV lithographic structures.

An EUV lithographic structure includes an EUV photosensitive resist layer disposed on a hardmask layer, wherein the EUV lithographic structure is free of an antireflective coating. An organic adhesion layer can be provided between the hardmask layer and the EUV photosensitive resist layer. The hardmask layer can include an uppermost oxide hardmask layer, an intermediate hardmask layer, and a lowermost oxide hardmask layer, wherein the EUV photosensitive resist layer is disposed on the uppermost oxide hardmask layer. Also described are methods for patterning the EUV lithographic structures.

Disclosed herein is a method, comprising disposing a first composition on a substrate, wherein the first composition comprises a first block copolymer comprising a first block and a second block, wherein the first block comprises a repeat unit containing a hydrogen acceptor or a hydrogen donor, and the second block comprises a repeat unit containing a blocked donor when the repeat unit of the first block is a hydrogen acceptor, or a blocked acceptor when the repeat unit of the first block is a hydrogen donor; and a solvent; and deprotecting the blocked acceptor or the blocked donor with a deprotecting agent.