G03F7/201

Mask orientation

A method of forming patterned features on a substrate is provided. The method includes positioning a plurality of masks arranged in a mask layout over a substrate. The substrate is positioned in a first plane and the plurality of masks are positioned in a second plane, the plurality of masks in the mask layout have edges that each extend parallel to the first plane and parallel or perpendicular to an alignment feature on the substrate, the substrate includes a plurality of areas configured to be patterned by energy directed through the masks arranged in the mask layout. The method further includes directing energy towards the plurality of areas through the plurality of masks arranged in the mask layout over the substrate to form a plurality of patterned features in each of the plurality of areas.

Methods for detecting traumatic brain injury

The present invention provides detection reagents and method for determining risk of traumatic brain injury (TBI), assessment of the amount of neuronal damage, and/or susceptibility to neurodegenerative disease in a subject.

RESIN COMPOSITION, CURED FILM, METHOD FOR MANUFACTURING CURED FILM, SUBSTRATE HAVING MULTILAYER FILM, METHOD FOR PRODUCING PATTERNED SUBSTRATE, PHOTOSENSITIVE RESIN COMPOSITION, METHOD FOR PRODUCING PATTERN CURED FILM, METHOD FOR PRODUCING POLYMER, AND METHOD FOR PRODUCING RESIN COMPOSITION
20230333468 · 2023-10-19 ·

An object is to provide a resin composition, which is a homogeneous solution containing a polymer, obtained by hydrolysis and polycondensation without precipitation during the sol-gel reaction even when a metal species with high EUV absorbance is introduced. The resin component includes a polymer including a constituent unit represented by (A) a following general formula (1) and (B) a following general formula (1-A),


[(R.sup.2).sub.d(R.sup.3).sub.e(OR.sup.4).sub.fSiO.sub.g/2]  (1)


[(R.sup.1).sub.bMO.sub.c/2]  (1-A)

In the general formula (1), R.sup.2 is a group represented by a following general formula (1a).

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Method to achieve tilted patterning with a through resist thickness using projection optics
11644757 · 2023-05-09 · ·

Embodiments disclosed herein include lithographic patterning systems for non-orthogonal patterning and devices formed with such patterning. In an embodiment, a lithographic patterning system comprises an actinic radiation source, where the actinic radiation source is configured to propagate light along an optical axis. In an embodiment, the lithographic patterning system further comprises a mask mount, where the mask mount is configurable to orient a surface of a mask at a first angle with respect to the optical axis. In an embodiment, the lithographic patterning system further comprises a lens module, and a substrate mount, where the substrate mount is configurable to orient a surface of a substrate at a second angle with respect to the optical axis.

METHOD AND SYSTEM TO DETERMINE AN EXPOSURE TIME AND/OR INTENSITY TO BE USED FOR OBTAINING A DESIRED FEATURE OF A RELIEF STRUCTURE

A method to determine an exposure time and/or intensity to be used for obtaining a desired feature of a relief structure, in particular a desired floor thickness, includes exposing a first side of a relief precursor with electromagnetic radiation, where the exposure is done in an area having a first position A and a second position B and is performed such that for a plurality of points between said first and second positions A, B the values for the exposure time and the exposure intensity are known, wherein the exposure time and/or the exposure intensity are automatically controlled to be varied at said plurality of points; determining one or more points of said plurality of points representative for the desired feature; and determining the required exposure time and/or exposure intensity for the desired feature based on the determined one or more points and the known values.

APPARATUS AND METHOD FOR EXPOSURE OF RELIEF PRECURSORS
20220276568 · 2022-09-01 · ·

An apparatus for exposure of a relief precursor (P) which comprises a substrate layer and at least one photosensitive layer. The apparatus includes a carrying structure for carrying a relief precursor and an LED array configured to illuminate a photosensitive layer of the relief precursor carried by the carrying structure. The LED array is configured to illuminate simultaneously a predetermined surface area of at least 900 cm.sup.2. The LED array includes a plurality of subsets of one or more LEDs, each subset being individually controllable. The apparatus also includes a control unit to control the plurality of subsets individually, and such that an irradiation intensity difference in the predetermined surface area is within a predetermined range.

METHODS FOR DETECTING TRAUMATIC BRAIN INJURY

The present invention provides detection reagents and method for determining risk of traumatic brain injury (TBI), assessment of the amount of neuronal damage, and/or susceptibility to neurodegenerative disease in a subject.

Method of fabrication and control of nano-structure array by angle-resolved exposure in proximity-field nano patterning

A method for fabricating a nano-structure includes: providing a phase mask having an uneven lattice structure to contact a photoresist film; exposing the photoresist film to a light through the phase mask such that the light is obliquely incident on a surface of the photoresist film; and developing the photoresist film to form a nano-structure.

DOUBLE EXPOSURE PROCESS
20220075269 · 2022-03-10 ·

A double exposure process includes providing a reticle including two different patterns arranged alternatedly in columns. A wafer covered by a photoresist is provided. Later, a double exposure process is performed. The double exposure process includes steps of: performing a first exposure by illuminating a light through the reticle to transfer patterns onto the photoresist. Later, the reticle is moved a distance of a width of one column. Finally, a second exposure is performed by illuminating the light through the reticle to transfer the patterns onto the photoresist.

PHOTORESIST-FREE PHOTOLITHOGRAPHY, PHOTOPROCESSING TOOLS, AND METHODS WITH VUV OR DEEP-UV LAMPS
20210333711 · 2021-10-28 ·

A fabrication tool has at least one flat lamp photon source, or an array of flat lamps, that serve to non-thermally ablate polymer material from a surface. No photoresist is required and the desired photoablated pattern is determined by inserting a photolithographic mask between the lamp(s) and the surface to be processed. Methods of the invention pattern organic polymer and can pattern a substrate using a pattern established in an organic polymer layer on the substrate, and can also deposit materials in the pattern by breaking bonds in deposition precursors with photons from the microplasma array. Another method converts organic polymer material to have a hydrophylic surface. A tool of the invention can have width and depth comparable to a typical paperback book and a height comparable to a coffee cup.