Substrate processing techniques to alleviate missing contact holes, scummed contact holes and scummed caused bridging are disclosed. In one embodiment, electromagnetic radiation (EMR) absorbing molecules are utilized in a process that uses an initial patterned exposure followed by a flood exposure. In one embodiment, a Photo-Sensitized Chemically-Amplified Resist (PSCAR) resist process is utilized to form contact holes in which an initial exposure and develop process is performed followed by a flood exposure and a second develop process. In another embodiment, a process is utilized in which precursors of EMR absorbing molecules are incorporated into a layer underlying the resist layer. Thus, enhanced formation of EMR absorbing molecules will result at the interface of the resist layer and the underlying layer.

A method for performing DBO measurements utilizing apertures having a single pole includes using a first aperture plate to measure X-axis diffraction of a composite grating. In some embodiments, the first aperture plate has a first pair of radiation-transmitting regions disposed along a first diametrical axis and on opposite sides of an optical axis that is aligned with a center of the first aperture plate. Thereafter, in some embodiments, a second aperture plate, which is complementary to the first aperture plate, is used to measure Y-axis diffraction of the composite grating. By way of example, the second aperture plate has a second pair of radiation-transmitting regions disposed along a second diametrical axis and on opposite sides of the optical axis. In some cases, the second diametrical axis is substantially perpendicular to the first diametrical axis.

A method of patterning a substrate includes forming a multilayer photoresist stack on a substrate. The multilayer photoresist stack includes a first layer of a wet photoresist deposited by spin-on deposition, and a second layer of a dry photoresist deposited by vapor deposition. The first layer is positioned over the second layer. A first relief pattern is formed in the first layer by exposure to a first pattern of actinic radiation of a first wavelength and development of developable portions of the first layer using a first development process. The first relief pattern uncovers portions of the second layer. A multi-color layer of the first relief pattern is formed. The multi-color layer includes the wet photoresist and a third material that is different from the wet photoresist and the dry photoresist. A selective patterning process is executed for uncovered portions of one or two of the wet photoresist, the dry photoresist and the third material.

A method of patterning a substrate includes forming a multilayer photoresist stack on a substrate. The multilayer photoresist stack includes a dry photoresist layer, deposited by vapor deposition, over a wet photoresist layer deposited by spin-on deposition. A first relief pattern is formed in the wet photoresist layer by exposure to a first pattern of actinic radiation of a first wavelength and development of developable portions of the wet photoresist layer using a first development process. The first relief pattern uncovers portions of the dry photoresist layer. A second relief pattern is formed in the dry photoresist layer by exposure to a second pattern of actinic radiation of a second wavelength and development of developable portions of the dry photoresist layer using a second development process. The developable portions of the dry photoresist layer are defined by the second pattern of actinic radiation and the first relief pattern.

A device manufacturing method including: performing a first exposure on a substrate using a first lithographic apparatus to form a first patterned layer including first features; processing the substrate to transfer the first features into the substrate; and performing a second exposure on the substrate using a second lithographic apparatus to form a second patterned layer including second features, wherein: the first lithographic apparatus has first and second control inputs effective to control first and second parameters of the first features at least partly independently; the second lithographic apparatus has a third control input effective to control the first and second parameters of the second features together; and the first exposure is performed with the first and/or second control input set to pre-bias the first and/or second parameter.

There is provided a substrate processing apparatus including: a holder configured to hold a substrate having a pattern formed with a resist material for ArF immersion lithography on a surface of the substrate inside a processing container; a rotation driver configured to rotate the holder; and a light source part having a plurality of light sources configured to irradiate the surface of the substrate held by the holder which is rotated by the rotation driver wherein the light sources include irradiating vacuum ultraviolet light, wherein an amount of irradiation of an inner side of the substrate with light from the light source part is made larger than an amount of irradiation of an outer side of the substrate with light from the light source part.

Embodiments of the present application provide an integrated circuit structure formation method, including: providing a first pattern and a to-be-corrected pattern, the first pattern including a first subpattern and a second subpattern spaced apart, the to-be-corrected pattern being located between the first subpattern and the second subpattern, and a preset horizontal distance being provided between the first pattern and the to-be-corrected pattern; providing a trim mask, the trim mask having a preset region, in a plane including the to-be-corrected pattern, a first orthographic projection of the preset region overlapping with the to-be-corrected pattern, a second orthographic projection being located on one side of the to-be-corrected pattern, and a horizontal length being greater than or equal to twice the preset horizontal distance; and performing an exposure process through the trim mask to form a target pattern. The embodiments of the present application facilitate accurate trimming of the to-be-corrected pattern.

The present disclosure provides a dual developing method for defining different resist patterns. In the present disclosure, by using a positive-tone development (PTD) process followed by a negative-tone development (NTD) process, and by allowing a first pattern to be transparent under a subsequent second photomask, different patterns can be formed on a same resist layer. As a result, problems encountered in prior art, such as insufficient DOF, formation of abnormal patterns, self-alignment issue, overlying problem and other problems, can be successfully addressed.

Disclosed herein are systems, methods, and software managing the deployment of development environments for an organization. In one example, a computing system may identify a request for a development environment. In response to the request, the computing system may select one or more images for the development environment from a plurality of images based on an identifier associated with the request and initiate one or more virtual nodes from the one or more images based on a configuration associated with the identifier.

A method of processing a substrate includes disposing a substrate in a drying chamber, and supplying a fluid into the drying chamber in which the substrate is disposed. The supplying of the fluid into the drying chamber includes supplying a gas into the drying chamber, and supplying a supercritical fluid into the drying chamber after the supplying of the gas is started.