A method for making a negative-working lithographic printing plate is disclosed which includes subjecting an image-wise exposed, developed and dried plate precursor to UV LED radiation.

The present disclosure provides a thin film transistor, including a base substrate, an active layer and a source/drain, and a conductive layer. The active layer and an outer edge of the conductive layer are formed in the same etching process. The present disclosure further provides a method for manufacturing a thin film transistor, including forming an active material layer and a conductive material layer, forming a photoresist on the conductive material layer, exposing and developing the photoresist by means of a halftone mask, removing segments of the active material layer and the conductive material layer corresponding to a photoresist completely-removed region by a same etching process, partially removing the photoresist in a photoresist completely-retained region and completely removing the photoresist in a photoresist partially-retained region, and removing a segment of the conductive material layer corresponding to the photoresist partially-retained region.

A monomer and polymer having a substituent group capable of polarity switch under the action of acid are provided. A resist composition comprising the polymer forms at a high resolution a negative pattern insoluble in alkaline developer and having high etch resistance.

Optical control modules for integrated circuit device patterning and reticles and methods including the same. The methods include exposing, via a reticle, initial and subsequent reticle exposure fields on a surface of a semiconductor substrate. The initial and subsequent reticle exposure fields pattern corresponding array regions and margin regions on the semiconductor substrate. The initial and subsequent reticle exposure fields partially overlap such that an initial optical control module (OCM), which is patterned during exposure of the initial reticle exposure field, and a subsequent OCM, which is patterned during exposure of the subsequent reticle exposure field, both are positioned within a single control module die. The reticles include reticles that can be utilized during the methods or that can form the integrated circuit devices. The integrated circuit devices include integrated circuit devices formed utilizing the methods or the reticles.

Substrate processing techniques to alleviate missing contact holes, scummed contact holes and scummed caused bridging are disclosed. In one embodiment, electromagnetic radiation (EMR) absorbing molecules are utilized in a process that uses an initial patterned exposure followed by a flood exposure. In one embodiment, a Photo-Sensitized Chemically-Amplified Resist (PSCAR) resist process is utilized to form contact holes in which an initial exposure and develop process is performed followed by a flood exposure and a second develop process. In another embodiment, a process is utilized in which precursors of EMR absorbing molecules are incorporated into a layer underlying the resist layer. Thus, enhanced formation of EMR absorbing molecules will result at the interface of the resist layer and the underlying layer.

There is provided a substrate processing apparatus including: a holder configured to hold a substrate having a pattern formed with a resist material for ArF immersion lithography on a surface of the substrate inside a processing container; a rotation driver configured to rotate the holder; and a light source part having a plurality of light sources configured to irradiate the surface of the substrate held by the holder which is rotated by the rotation driver wherein the light sources include irradiating vacuum ultraviolet light, wherein an amount of irradiation of an inner side of the substrate with light from the light source part is made larger than an amount of irradiation of an outer side of the substrate with light from the light source part.

A light irradiating device includes a processing chamber in which a substrate is accommodated; a beam source chamber in which a beam source of an energy beam is accommodated; a partition wall configured to partition the processing chamber and the beam source chamber; multiple window members provided at the partition wall to transmit the energy beam outputted from the beam source toward the substrate within the processing chamber; and multiple gas discharge units respectively disposed around the multiple window members within the processing chamber, and configured to discharge an inert gas along surfaces of the multiple window members.

Provided are a photosensitive coloring composition including a coloring material, a photopolymerization initiator A1 having a light absorption coefficient of 1.010.sup.4 mL/g.Math.cm or more at a wavelength of 365 nm in methanol, a photopolymerization initiator A2 having a light absorption coefficient of 1.010.sup.2 mL/g.Math.cm or less at a wavelength of 365 nm in methanol and having a light absorption coefficient of 1.010.sup.3 mL/g.Math.cm or more at a wavelength of 254 nm in methanol, and a polymerizable monomer, in which a content of the polymerizable monomer in a total solid content of the photosensitive coloring composition is 15% by mass or more; a cured film, a method for forming a pattern, a color filter, a solid-state imaging element, and an image display device.

Optical control modules for integrated circuit device patterning and reticles and methods including the same. The methods include exposing, via a reticle, initial and subsequent reticle exposure fields on a surface of a semiconductor substrate. The initial and subsequent reticle exposure fields pattern corresponding array regions and margin regions on the semiconductor substrate. The initial and subsequent reticle exposure fields partially overlap such that an initial optical control module (OCM), which is patterned during exposure of the initial reticle exposure field, and a subsequent OCM, which is patterned during exposure of the subsequent reticle exposure field, both are positioned within a single control module die. The reticles include reticles that can be utilized during the methods or that can form the integrated circuit devices. The integrated circuit devices include integrated circuit devices formed utilizing the methods or the reticles.

A method for performing DBO measurements utilizing apertures having a single pole includes using a first aperture plate to measure X-axis diffraction of a composite grating. In some embodiments, the first aperture plate has a first pair of radiation-transmitting regions disposed along a first diametrical axis and on opposite sides of an optical axis that is aligned with a center of the first aperture plate. Thereafter, in some embodiments, a second aperture plate, which is complementary to the first aperture plate, is used to measure Y-axis diffraction of the composite grating. By way of example, the second aperture plate has a second pair of radiation-transmitting regions disposed along a second diametrical axis and on opposite sides of the optical axis. In some cases, the second diametrical axis is substantially perpendicular to the first diametrical axis.