Patent classifications
G03F7/2024
Method for manufacturing device
According to one embodiment, a method for manufacturing a device includes a first process, a second process, a third process, and a fourth process. The first process includes providing a structure body at a first surface of a substrate. The substrate is light-transmissive and has a second surface. A light transmissivity of the structure body is lower than a light transmissivity of the substrate. The second process includes providing a negative-type photoresist at the second surface. The third process includes irradiating the substrate with light to expose a portion of the photoresist. The light is irradiated in a first direction from the first surface toward the second surface. The light passes through the substrate. The fourth process includes developing the photoresist to remain the portion of the photoresist in a state of being adhered to the second surface and to remove other portion of the photoresist.
Exposure apparatus and article manufacturing method
An exposure apparatus comprises a projection optical system for projecting a pattern of a mask, a substrate stage for holding a substrate, and a measurement device installed on the substrate stage, including a plate on which a substrate-side mark is formed, and a sensor for detecting light transmitted through a mask-side mark, the projection optical system, and the substrate-side mark, and configured to measure an amount of the light detected by the sensor. The substrate-side mark includes a central mark arranged in a center of a sensitive region of the sensor, and a peripheral mark arranged in a periphery of the central mark. The central mark is used in measurement of the light amount, including driving the substrate stage in a direction parallel to an optical axis of the projection optical system.
Method for producing flexographic printing plates using UV-LED irradiation
A method for producing flexographic printing plates, using a photopolymerizable flexographic printing element having, arranged one atop another, a dimensionally stable support, a photopolymerizable, relief-forming layer, an elastomeric binder, an ethylenically unsaturated compound, and a photoinitiator, and optionally a rough, UV-transparent layer, a particulate substance, and digitally imagable layer. The method includes: (a) producing a mask by imaging the digitally imagable layer, (b) exposing the photopolymerizable, relief-forming layer through the mask with actinic light, and photopolymerizing the image regions of the layer, and (c) developing the photpolymerized layer by washing out the unphotopolymerized regions of the relief-forming layer with an organic solvent, or by thermal development. Step (b) includes (1) exposure with actinic light with an intensity of 100 mW/cm2 from a plurality of UV-LEDs and (2) exposure with actinic light with an intensity of <100 mW/cm2 from a UV radiation source other than UV-LEDs.
INTERCONNECT STRUCTURES CONTAINING PATTERNABLE LOW-K DIELECTRICS AND ANTI-REFLECTIVE COATINGS AND METHOD OF FABRICATING THE SAME
A process for manufacturing interconnect BEOL structures from a patternable low-k dielectric on a microcircuit substrate having an optional anti-reflective coating comprises applying to the microcircuit substrate a via coating for forming a via comprising a low-k patternable dielectric coating, exposing the via coating to a via pattern, developing the exposed via coating, curing the exposed and developed via coating to form a via film, applying a trench coating for forming a trench comprising a patternable low-k dielectric coating, exposing the trench coating to a trench pattern, developing the exposed and developed trench coating, followed by curing the trench coating to form a trench film; Curing one of the uncured coatings to form a film prevents it from inter-mixing with the other applied uncured coating. Articles of manufacture comprise products made by this process as well as dual-damascene integrated spun-on patterned low-k dielectrics, and single-damascene integrated spun-on patterned low-k dielectrics.
Negative-working photoresist compositions for laser ablation and use thereof
A composition crosslinkable by broad band UV radiation, which after cross-linking is capable of cold ablation by a UV Excimer Laser emitting between 222 nm and 308 nm, where the composition is comprised of a negative tone resist developable in aqueous base comprising and is also comprised of a conjugated aryl additive absorbing ultraviolet radiation strongly in a range between from about 220 nm to about 310 nm. The present invention also encompasses a process comprising steps a), b) and c) a) coating the composition of claim 1 on a substrate; b) cross-linking the entire coating by irradiation with broadband UV exposure; c) forming a pattern in the cross-linked coating by cold laser ablating with a UV excimer laser emitting between 222 nm and 308 nm. Finally the present invention also encompasses The present invention also encompasses a process comprising steps a), b) c) and d) a) coating the composition of claim 1 on a substrate; b) cross-linking part of the coating by irradiation with broadband UV exposure through a mask; c) developing the coating with aqueous base removing the unexposed areas of the film, thereby forming a first pattern; d) forming a second pattern in the first pattern by laser cold laser ablating of the first pattern with a UV excimer laser emitting between 222 nm and 308 nm.
Aperture design and methods thereof
A method for performing DBO measurements utilizing apertures having a single pole includes using a first aperture plate to measure X-axis diffraction of a composite grating. In some embodiments, the first aperture plate has a first pair of radiation-transmitting regions disposed along a first diametrical axis and on opposite sides of an optical axis that is aligned with a center of the first aperture plate. Thereafter, in some embodiments, a second aperture plate, which is complementary to the first aperture plate, is used to measure Y-axis diffraction of the composite grating. By way of example, the second aperture plate has a second pair of radiation-transmitting regions disposed along a second diametrical axis and on opposite sides of the optical axis. In some cases, the second diametrical axis is substantially perpendicular to the first diametrical axis.
ARRAY SUBSTRATE, METHOD OF MANUFACTURING THE SAME, AND DISPLAY PANEL
Embodiments of the present disclosure provide an array substrate and a method of manufacturing the same and a display pane. The array substrate includes: a substrate, and a light shielding metal layer, a buffer layer, a thin film transistor disposed on the substrate in order. The thin film transistor includes a gate electrode, an active layer, and a source electrode and a drain electrode. The buffer layer includes a first via hole that exposes the light shielding metal layer. The source electrode is electrically connected to the light shielding metal layer through the conductive structure in the first via hole.
Method for patterning a substrate using extreme ultraviolet lithography
Techniques disclosed herein provide a method for continued patterning of substrates having sub-resolution features. Techniques include using novel deposition and removal techniques. This results in a substrate with inter-digitated photoresist in which photoresist is positioned between structures on a given substrate. Combined with using extreme ultraviolet lithographic exposure, patterning techniques herein can make desired cuts and blocks at specified locations on the substrate.
SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF
A method of manufacturing a semiconductor structure includes providing a mask including a first substrate; a first mask layer disposed over the first substrate, including a plurality of first recesses extended through the first mask layer; a second mask layer disposed over the first mask layer and including a plurality of second recesses extended through the second mask layer; providing a second substrate including a photoresist disposed over the second substrate; and projecting a predetermined electromagnetic radiation through the mask towards the photoresist, wherein the first mask layer is at least partially transparent to the predetermined electromagnetic radiation, the second mask layer is opaque to the predetermined electromagnetic radiation, and at least a portion of the second mask layer is disposed between two of the plurality of second recesses.
PHOTOSENSITIVE SILOXANE COMPOSITION AND CURED FILM FORMED BY USING THE SAME
To provide a photosensitive composition capable of easily forming a cured film having a low refractive index. The present invention provides a photosensitive siloxane composition comprising: a polysiloxane, a photosensitive agent, hollow silica particles, and a solvent. The hollow silica particles contain voids inside, and have outer surfaces subjected to hydrophobic treatment.