A method for critical dimension control in which a substrate is received having an underlying layer and a radiation-sensitive material layer thereon. The radiation-sensitive material is exposed through a patterned mask to a first wavelength of light in the UV spectrum, and developed a first time. The radiation-sensitive material is flood exposed to a second wavelength of light different from the first wavelength of light and developed a second time to form a pattern. Prior to flood exposure, the radiation-sensitive material has a first light wavelength activation threshold that controls generation of acid to a first acid concentration in the radiation-sensitive material layer and controls generation of photosensitizer molecules in the radiation-sensitive material layer, and a second light wavelength activation threshold different than the first light wavelength activation threshold that can excite the photosensitizer molecules resulting in the acid comprising a second acid concentration greater than the first acid concentration.

According to one embodiment, a method for manufacturing a device includes a first process, a second process, a third process, and a fourth process. The first process includes providing a structure body at a first surface of a substrate. The substrate is light-transmissive and has a second surface. A light transmissivity of the structure body is lower than a light transmissivity of the substrate. The second process includes providing a negative-type photoresist at the second surface. The third process includes irradiating the substrate with light to expose a portion of the photoresist. The light is irradiated in a first direction from the first surface toward the second surface. The light passes through the substrate. The fourth process includes developing the photoresist to remain the portion of the photoresist in a state of being adhered to the second surface and to remove other portion of the photoresist.

An exposure apparatus comprises a projection optical system for projecting a pattern of a mask, a substrate stage for holding a substrate, and a measurement device installed on the substrate stage, including a plate on which a substrate-side mark is formed, and a sensor for detecting light transmitted through a mask-side mark, the projection optical system, and the substrate-side mark, and configured to measure an amount of the light detected by the sensor. The substrate-side mark includes a central mark arranged in a center of a sensitive region of the sensor, and a peripheral mark arranged in a periphery of the central mark. The central mark is used in measurement of the light amount, including driving the substrate stage in a direction parallel to an optical axis of the projection optical system.

The disclosure herein describes methods for Photosensitized Chemically Amplified Resist Chemicals (PS-CAR) to pattern light sensitive films on a semiconductor substrate. In one embodiment, a two-step exposure process may generate higher acid concentration regions within a photoresist layer. The PS-CAR chemicals may include photoacid generators (PAGs) and photosensitizer elements that enhance the decomposition of the PAGs into acid. The first exposure may be a patterned EUV exposure that generates an initial amount of acid and photosensitizer. The second exposure may be a non-EUV flood exposure that excites the photosensitizer which increases the acid generation rate where the photosensitizer is located on the substrate. The distribution of energy during the exposures may be optimized by using certain characteristics (e.g., thickness, index of refraction, doping) of the photoresist layer, an underlying layer, and/or an overlying layer.

The present disclosure provides a thin film transistor, including a base substrate, an active layer and a source/drain, and a conductive layer. The active layer and an outer edge of the conductive layer are formed in the same etching process. The present disclosure further provides a method for manufacturing a thin film transistor, including forming an active material layer and a conductive material layer, forming a photoresist on the conductive material layer, exposing and developing the photoresist by means of a halftone mask, removing segments of the active material layer and the conductive material layer corresponding to a photoresist completely-removed region by a same etching process, partially removing the photoresist in a photoresist completely-retained region and completely removing the photoresist in a photoresist partially-retained region, and removing a segment of the conductive material layer corresponding to the photoresist partially-retained region.

A substrate processing apparatus includes: a processing chamber configured to process a substrate; a light source chamber including a light source configured to irradiate vacuum ultraviolet light onto a surface of the substrate; a gas supply configured to supply an inert gas into the light source chamber; and a controller that controls the gas supply to maintain the light source chamber in an inert gas atmosphere.

A method for producing a nucleic acid array which includes: a step of forming a resist film using a positive resist composition containing a photo acid generator for generating an acid as a result of being exposed to light on a solid phase which has a molecule immobilized thereon and having functional groups protected by an acid-decomposable protective group; a step of exposing a desired position of the resist film to light; a step of developing the resist film which has been subjected to development using a developing liquid; and a step of bringing the solid phase including the resist film which has been subjected to development into contact with a nucleotide derivative having an acid-decomposable protective group is provided.

A method is disclosed for monitoring and controlling a process of plasma-assisted surface modification of a layer formed on a substrate. The method includes flowing a surface modification gas into a plasma processing chamber of a plasma processing system, igniting a plasma in the plasma processing chamber to initiate a surface modification process for a layer formed on a substrate, and acquiring optical emission spectra from an optical emission spectroscopy system attached to the plasma processing chamber, during the surface modification process for the layer. For one embodiment, the method includes altering at least one parameter of the surface modification process based on the acquired optical emission spectra. For one embodiment, the acquired optical emission spectra can include an intensity of a spectral line, a slope of a spectral line, or both to enable endpoint control of the surface modification process. Additional methods and related systems are also disclosed.

A photosensitive resin composition for flexographic printing, comprising at least (A) a hydrophilic copolymer, (B) an elastomer, (C) a polymerizable unsaturated monomer, and (D) a photopolymerization initiator, wherein, in a cross-section of a cured product of the resin composition, a phase area of a phase comprising the hydrophilic copolymer (A), SA, is 15% or more and 60% or less, and a proportion of the phase having a phase area of 3 m.sup.2 or more and less than 100 m.sup.2 is 20 (% by area) or more of the phase comprising the hydrophilic copolymer (A).

A method for producing a microstructure provided with a member in which, on a substrate having a plurality of concave shapes processed thereon, a dry film resist is subjected to tenting on open faces of a plurality of concave shapes, and then openings are formed in the dry film resist where divided exposure is performed such that patterning is performed with first exposure light and second exposure is performed to cause overexposure.