The present disclosure discloses a method of manufacturing a display panel. The method includes: providing a first substrate, and forming a release layer on the first substrate; forming a thin film transistor driving layer on the first substrate; forming a display element on the first substrate, wherein a part of the display element forms above the release layer and another part of the display element forms above the thin film transistor driving layer; separating the release layer and the first substrate with a laser; removing the release layer and the display element above the release layer, and forming a hollow portion on the first substrate; packaging the display element to form a display panel, wherein the display panel at least includes a first packaging portion; and providing a through hole passing through the display panel at a region on the display panel corresponding to the hollow portion.

Provided are a curable coloring composition which is suitable for the production of a cured film in cyan color, having good moisture resistance, a color filter, an image sensor, and a method for producing a cured film. The curable coloring composition includes a coloring agent including a phthalocyanine pigment having Al as a central metal, a basic pigment derivative, and a curable compound, in which the coloring agent includes 80% by mass or more of the phthalocyanine pigments, and the content of the phthalocyanine pigment having Al as a central metal among the phthalocyanine pigments is 30% by mass or more.

The present invention provides a TFT substrate manufacturing method. The method uses a photoresist material that contains crystallizable and precipitatable pigment to form a photoresist layer, so that a plurality of crystallization burrs can be formed on a surface of the photoresist layer, making it possible for a pixel electrode film not completely covering the surface of the photoresist layer and thus, allowing a peeling agent to pass through the crystallization burrs and penetrate into the photoresist layer to cause corrosion of the photoresist layer thereby peeling off the photoresist layer and a portion of the pixel electrode film located on the photoresist layer at the same time to form a pixel electrode, whereby, compared to the prior art, peeling can be conducted without adopting a special mask and involving special mask parameters and also requiring no plasma treatment so that the process of fabricating a TFT substrate can be simplified to enhance fabrication efficiency of the TFT substrate.

A method for producing flexographic printing plates, using a photopolymerizable flexographic printing element having, arranged one atop another, a dimensionally stable support, a photopolymerizable, relief-forming layer, an elastomeric binder, an ethylenically unsaturated compound, and a photoinitiator, and optionally a rough, UV-transparent layer, a particulate substance, and digitally imagable layer. The method includes: (a) producing a mask by imaging the digitally imagable layer, (b) exposing the photopolymerizable, relief-forming layer through the mask with actinic light, and photopolymerizing the image regions of the layer, and (c) developing the photpolymerized layer by washing out the unphotopolymerized regions of the relief-forming layer with an organic solvent, or by thermal development. Step (b) includes (1) exposure with actinic light with an intensity of 100 mW/cm2 from a plurality of UV-LEDs and (2) exposure with actinic light with an intensity of <100 mW/cm2 from a UV radiation source other than UV-LEDs.

A photomask is provided. A photomask, comprising: a transparent substrate; and a plurality of filter layers disposed on the transparent substrate, wherein the filter layers include a first filter layer, which selectively transmits first-wavelength light therethrough, and a second filter layer, which selectively transmits second-wavelength light therethrough.

A photosensitive resin composition for flexographic printing, comprising at least (A) a hydrophilic copolymer, (B) an elastomer, (C) a polymerizable unsaturated monomer, and (D) a photopolymerization initiator, wherein, in a cross-section of a cured product of the resin composition, a phase area of a phase comprising the hydrophilic copolymer (A), SA, is 15% or more and 60% or less, and a proportion of the phase having a phase area of 3 m.sup.2 or more and less than 100 m.sup.2 is 20 (% by area) or more of the phase comprising the hydrophilic copolymer (A).

A method is disclosed for monitoring and controlling a process of plasma-assisted surface modification of a layer formed on a substrate. The method includes flowing a surface modification gas into a plasma processing chamber of a plasma processing system, igniting a plasma in the plasma processing chamber to initiate a surface modification process for a layer formed on a substrate, and acquiring optical emission spectra from an optical emission spectroscopy system attached to the plasma processing chamber, during the surface modification process for the layer. For one embodiment, the method includes altering at least one parameter of the surface modification process based on the acquired optical emission spectra. For one embodiment, the acquired optical emission spectra can include an intensity of a spectral line, a slope of a spectral line, or both to enable endpoint control of the surface modification process. Additional methods and related systems are also disclosed.

Patterning methods for creating features with sub-resolution dimensions that are self-aligned in photoresist materials. Techniques include selectably creating antispacers (or spacers) in soft materials, such as photoresist. A photoresist without a photo acid generator is deposited on a relief pattern of a solubility-neutralized photoresist material having a photo acid generator. A photomask then defines where photo acid is generated from a corresponding activating exposure. Photo acid is then diffused into the photoresist, that is free of the photo acid generator, to cause a solubility shift for subsequent development. These selectably-created antispacers can be line segments having widths defined by acid diffusion lengths, which can be widths of 1 nanometer to tens of nanometers. Moreover, the creation of antispacers, their location, and length, can be controlled using a photomask.

The present disclosure discloses a method of manufacturing a display panel. The method includes: providing a first substrate, and forming a release layer on the first substrate; forming a thin film transistor driving layer on the first substrate; forming a display element on the first substrate, wherein a part of the display element forms above the release layer and another part of the display element forms above the thin film transistor driving layer; separating the release layer and the first substrate with a laser; removing the release layer and the display element above the release layer, and forming a hollow portion on the first substrate; packaging the display element to form a display panel, wherein the display panel at least includes a first packaging portion; and providing a through hole passing through the display panel at a region on the display panel corresponding to the hollow portion.

The disclosure provides in some embodiments a method for fabricating a photoresist pattern, a color filter and a method for fabricating the same, and a display device. The method for fabricating a photoresist pattern includes coating negative photoresist on a base substrate to form a first photoresist layer, coating positive photoresist on the first photoresist layer to form a second photoresist layer, conducting a first exposure process on first regions of the second photoresist layer, conducting a first developing process to remove the positive photoresist within the first regions of the second photoresist layer and the negative photoresist within second regions of the first photoresist layer, so as to obtain a first photoresist pattern and a second photoresist pattern, conducting a second exposure process on the first photoresist pattern and the second photoresist pattern, and conducting a second developing process to remove the first photoresist pattern.