Disclosed is a photoresist composition comprising a non-chemically amplified resist material and a sensitizer precursor, wherein the sensitizer precursor is a compound that, upon irradiation with ionizing radiation or non-ionizing radiation having a wavelength of 300 nm or less, generates a sensitizer that absorbs non-ionizing radiation having a wavelength more than 300 nm.

Embodiments disclosed herein include a method of patterning a substrate. In an embodiment, the method comprises, disposing a photoresist layer over a substrate, and exposing the photoresist layer to form an exposed region and an unexposed region in the photoresist layer. In an embodiment, the method further comprises treating either the exposed region or the unexposed region with a sequential infiltration synthesis (SIS) process to form a treated region, and developing the photoresist layer to remove portions of the photoresist layer other than the treated region.

A method for preparing a multi-layer substrate, which includes: forming a first film layer on a substrate, and forming a group of alignment marks in alignment areas of the first film layer; and forming a plurality of subsequent film layers and a top film layer on the first film layer in sequence; in the patterning process for each subsequent film layer, alignment marks in a mask plate for the subsequent film layer are aligned with the alignment marks in the first film layer, and photoresist coated on the subsequent film layer is subjected to exposure; and in a patterning process of the subsequent film layer, photoresist patterns, formed by the alignment marks in the mask plate at pattern positions of the alignment marks of the first film layer when the photoresist coated on the subsequent film layer is subjected to exposure, are removed. The method improves the alignment accuracy between the patterns of the formed subsequent film layer.

A method of correcting an optical image formed by an optical system, the method including obtaining a map indicative of a polarization dependent property of the optical system across a pupil plane of the optical system for each spatial position in an image plane of the optical system, combining the map indicative of the polarization dependent property of the optical system with a radiation map of the intensity and polarization of an input radiation beam to form an image map, and using the image map to correct an optical image formed by directing the input radiation beam through the optical system.

A method includes forming a plurality of first mandrels over a substrate, forming an overcoat layer over the plurality of first mandrels, and inducing a crosslinking reaction within the overcoat layer and form a crosslinked overcoat layer. The method further includes exposing the substrate to a radiation to generate a plurality of acid molecules within the plurality of first mandrels, diffusing a portion of the plurality of acid molecules from the plurality of first mandrels into portions of the crosslinked overcoat layer, and inducing a decrosslinking reaction within the portions of the crosslinked overcoat layer and form de-crosslinked regions. Unmodified regions of the crosslinked overcoat layer form a plurality of second mandrels. The method further includes selectively removing the de-crosslinked regions. The plurality of first mandrels and the plurality of second mandrels form a mandrel pattern over the substrate.

A photoresist stripper composition according to one or more embodiments includes an amine compound, a cyclic alcohol, a protic polar organic solvent, an aprotic polar organic solvent, and a polyhydric alcohol having 4 to 6 carbon atoms. The amine compound in the photoresist stripper composition may have a molecular weight of about 80 g/mol or less, and a HSPo value according to Equation 1 of about 27 to about 32. The photoresist stripper composition according to one or more embodiments may be utilized in a process of removing a photoresist pattern formed on a lower film, and may supply an excellent or suitable strip ability for photoresist and characteristics of preventing or reducing damage of the lower film.

A method includes: depositing a mask layer over a substrate; directing first radiation reflected from a central collector section of a sectional collector of a lithography system toward the mask layer according to a pattern; directing second radiation reflected from a peripheral collector section of the sectional collector toward the mask layer according to the pattern, wherein the peripheral collector section is vertically separated from the central collector section by a gap; forming openings in the mask layer by removing first regions of the mask layer exposed to the first radiation and second regions of the mask layer exposed to the second radiation; and removing material of a layer underlying the mask layer exposed by the openings.

Method, non-transitory method, and controller for fabricating a template. Including receiving a template with a mesa. The template has a first coating on: the mesa; a recessed surface; and mesa sidewalls connecting the recessed surface to the mesa. A first cured formable material layer has been formed on the first coating on the mesa, the mesa sidewalls, and the recessed surface using a first shaping process. An improvement comprises: forming a second cured formable material layer on top of the first cured formable material layer on the recessed surface using a second shaping process; removing the first cured formable material layer and the first coating on the mesa, and a portion of the second cured formable material layer on the sidewalls and the recessed surface; and removing the first cured formable material layer and the second cured formable material layer from the mesa sidewalls and the recessed surface.

Embodiments described herein relate to a method for developing an exposed resist layer that includes an exposed region and an unexposed region. In an embodiment, the method includes applying a first treatment to the resist layer, where the first treatment is a silylation process. In an embodiment, the method further includes applying a second treatment to the resist layer, where the second treatment is different than the first treatment. In an embodiment, the method further includes developing the resist layer.

Techniques for improved extreme ultraviolet (EUV) patterning using assist features, related transistor structures, integrated circuits, and systems, are disclosed. A number of semiconductor fins and assist features are patterned into a semiconductor substrate using EUV. The assist features increase coverage of absorber material in the EUV mask, thereby reducing bright field defects in the EUV patterning. The semiconductor fins and assist features are buried in fill material and a mask is patterned that exposes the assist features and covers the semiconductor fins. The exposed assist features are partially removed and the protected active fins are ultimately used in transistor devices.