G03F7/2043

Extreme ultraviolet light generation apparatus and electronic device manufacturing method
11044799 · 2021-06-22 · ·

An extreme ultraviolet light generation apparatus includes a chamber (10) having an internal space in which extreme ultraviolet light is generated when a target substance supplied to the internal space is irradiated with a laser beam (301), a gas supply unit (63) configured to supply etching gas to the internal space, a discharge unit (61) configured to discharge residual gas from the internal space, a pressure sensor (26) configured to measure a pressure in the internal space, and a control unit (20), and the control unit (20) may predict a time until the pressure in the internal space reaches a predetermined pressure by using a relation between an elapsed time since start of a predetermined duration including a duration in which the extreme ultraviolet light is generated and a pressure measured in the predetermined duration.

Methods of forming variable-depth device structures

A method for forming a device structure is disclosed. The method of forming the device structure includes forming a variable-depth structure in a device material layer using cyclic-etch process techniques. A plurality of device structures is formed in the variable-depth structure to define vertical or slanted device structures therein. The variable-depth structure and the vertical or slanted device structures are formed using an etch process.

APPARATUS AND METHOD FOR METROLOGY
20210148695 · 2021-05-20 ·

A method of performing metrology analysis of a thin film includes coupling a radiation into an optical element disposed adjacent to a surface of the thin film. The radiation is coupled such that the radiation is totally internally reflected at an interface between the optical element and the thin film. An evanescent radiation generated at the interface penetrates the thin film. The method furthers include analyzing the evanescent radiation scattered by the thin film to obtain properties of the thin film.

Aqueous solution for resist pattern coating and pattern forming methods using the same

A novel aqueous solution for resist pattern coating. An aqueous solution for resist pattern coating, including: a copolymer as component A, the copolymer having an ethylene oxide unit and a C.sub.3 alkylene oxide unit in a main chain and having a hydroxy group at a terminal; a water-soluble polymer, a water-soluble monomer, or a water-soluble oligomer as component B, the water-soluble polymer being other than the copolymer as the component A; and a solvent as component C, the solvent containing water as a main component. The copolymer as the component A is for example a block copolymer of formula (1) below:
HOprivate use character ParenopenstR.sub.1Oprivate use character Parenclosest.sub.xprivate use character ParenopenstR.sub.2Oprivate use character Parenclosest.sub.yprivate use character ParenopenstR.sub.3Oprivate use character Parenclosest.sub.zH  (1)
wherein R.sub.1, R.sub.2, and R.sub.3 are each independently an ethylene group, a propylene group, or a trimethylene group, and x, y, and z are each independently an integer of 5 to 100.

Method and apparatus for determining width-to-length ratio of channel region of thin film transistor

The present disclosure provides a method for determining a width-to-length ratio of a channel region of a thin film transistor (TFT). The method includes: S1, setting an initial width-to-length ratio of the channel region; S2, manufacturing a TFT by using a mask plate according to the initial width-to-length ratio; S3, testing the TFT manufactured according to the initial width-to-length ratio; S4, determining whether or not the test result satisfies a predetermined condition, performing S5 if the test result satisfies the predetermined condition, and performing S6 if the test result does not satisfy the predetermined condition; S5, determining the initial width-to-length ratio as the width-to-length ratio of the channel region of the TFT; S6, changing the value of the initial width-to-length ratio, adjusting a position of the mask plate according to the changed initial width-to-length ratio, and performing S2 to S4 again.

TASK COMPLETION IN A TRACKING DEVICE ENVIRONMENT
20210018829 · 2021-01-21 ·

A set of tracking devices can be placed within a geographic area as part of a scavenger hunt. A user with a mobile device can traverse the area, and when the user moves within a threshold proximity or communicative range of a tracking device, the mobile device can receive a communication from the tracking device identifying the tracking device. In response to determining that the tracking device is part of the set of tracking devices and thus part of the scavenger hunt, the mobile device can modify a tracking device interface displaying a representation of the tracking device to indicate that the tracking device has been found. In response to each tracking device being found, the mobile device can modify the tracking device interface to indicate that the scavenger hunt has been completed.

METHOD AND SYSTEM TO MONITOR A PROCESS APPARATUS

A method involving determining a contribution that one or more process apparatuses make to a characteristic of a substrate after the substrate has been processed according to a patterning process by the one or more process apparatuses by removing from values of the characteristic of the substrate a contribution of a lithography apparatus to the characteristic and a contribution of one or more pre-lithography process apparatuses to the characteristic.

Apparatus and method for metrology

A method of performing metrology analysis of a thin film includes coupling a radiation into an optical element disposed adjacent to a surface of the thin film. The radiation is coupled such that the radiation is totally internally reflected at an interface between the optical element and the thin film. An evanescent radiation generated at the interface penetrates the thin film. The method furthers include analyzing the evanescent radiation scattered by the thin film to obtain properties of the thin film.

Method for Selective Delamination and Transfer of Thin Film Using Liquid Platform
20200387073 · 2020-12-10 ·

Provided is a selective transfer method including depositing a thin film on a substrate; patterning the thin film using a laser or a tool to acquire a thin film of a target pattern; masking the thin film of the target pattern; selectively controlling a surface wettability through surface treatment of the masked thin film; delaminating the thin film of the target pattern by dipping a surface of the thin film with a wettability changed in response to a completion of the selective surface treatment into a liquid material and by applying a crack opening force capable of delaminating an interface between the thin film and the substrate; and immersing a target substrate into the liquid material when the thin film of the target pattern is floating in the liquid material and then scoop-up transferring the floating thin film of the target pattern.

LIQUID EJECTION DEVICE WITH DAMPENING DEVICE

A liquid ejection device includes a liquid duct system having a plurality of nozzles, a plurality of pressure chambers communicating with the nozzles, and a liquid supply line communicating with the pressure chambers; a plurality of actuators arranged to pressurize the liquid in the pressure chambers for ejecting droplets of liquid through the nozzles; and a dampening device including a cavity that is in fluid communication with the duct system and is delimited by a resilient foil for dampening pressure waves in the liquid. The resilient foil is pre-formed in a corrugated shape.