A method of making microstructures, including: setting a photoresist layer on a surface of a base; covering a surface of the photoresist layer with a photolithography mask plate, wherein the photolithography mask plate includes: a substrate; a patterned chrome layer on a surface of the substrate; a carbon nanotube layer on the patterned chrome layer, wherein a first pattern of the patterned chrome layer is the same as a second pattern of the carbon nanotube layer; a cover layer on the carbon nanotube layer; exposing the photoresist layer to form an exposed photoresist layer by irradiating the photoresist layer through the photolithography mask plate with ultraviolet light; and developing the exposed photoresist layer to obtain a patterned photoresist microstructures.

A composition for resist underlayer film formation, containing a compound represented by the following formula (1).

[L.sub.xTe(OR.sup.1).sub.y](1)

(In the above formula (1), L is a ligand other than OR.sup.1; R.sup.1 is any of a hydrogen atom, a substituted or unsubstituted, linear alkyl group having 1 to 20 carbon atoms or branched or cyclic alkyl group having 3 to 20 carbon atoms, a substituted or unsubstituted aryl group having 6 to 20 carbon atoms and a substituted or unsubstituted alkenyl group having 2 to 20 carbon atoms; x is an integer of 0 to 6; y is an integer of 0 to 6; the total of x and y is 1 to 6; when x is 2 or more, a plurality of L may be the same or different; and when y is 2 or more, a plurality of R.sup.1 may be the same or different.)

The present application provides a method of processing a substrate. The method of processing the substrate includes steps of forming a photosensitive layer on the substrate; performing a first exposure process to expose the photosensitive layer to actinic radiation through a first mask; performing a first developing process to remove portions of the photosensitive layer exposed to the actinic radiation and form an intermediate pattern; performing a second exposure process to expose the intermediate pattern to the actinic radiation through a second mask; performing a second developing process to remove portions of the intermediate pattern shielded from the actinic radiation and form a target pattern; and performing an etching process to remove portions of the substrate exposed by the target pattern.

A method includes first step of forming first pattern in each of first region of a substrate by using scanning exposure apparatus, and second step of forming second pattern in each second region of the substrate having undergone the first step. Each second region includes at least two first regions, and in the first step, scanning direction in the scanning exposure apparatus is allocated to each of the at least two first regions. Combination of the scanning directions allocated to the at least two first regions is common to the second regions. The combination is determined such that the scanning directions of at least first regions, of the at least two first regions, which are arranged in a direction perpendicular to the scanning directions are alternately changed one by one.

A method of making microstructures, including: setting a photoresist layer on a surface of a base; covering a surface of the photoresist layer with a photolithography mask plate, wherein the photolithography mask plate includes: a substrate; a patterned chrome layer on a surface of the substrate; a carbon nanotube layer on the patterned chrome layer, wherein a first pattern of the patterned chrome layer is the same as a second pattern of the carbon nanotube layer; a cover layer on the carbon nanotube layer; exposing the photoresist layer to form an exposed photoresist layer by irradiating the photoresist layer through the photolithography mask plate with ultraviolet light; and developing the exposed photoresist layer to obtain a patterned photoresist microstructures.

A photolithography mask plate, the photolithography mask plate including: a substrate; a carbon nanotube layer on the substrate; a patterned chrome layer on the carbon nanotube layer, wherein the patterned chrome layer and the carbon nanotube layer have the same pattern; a cover layer on the patterned chrome layer.

A method includes first step of forming first pattern in each of first region of a substrate by using scanning exposure apparatus, and second step of forming second pattern in each second region of the substrate having undergone the first step. Each second region includes at least two first regions, and in the first step, scanning direction in the scanning exposure apparatus is allocated to each of the at least two first regions. Combination of the scanning directions allocated to the at least two first regions is common to the second regions. The combination is determined such that the scanning directions of at least first regions, of the at least two first regions, which are arranged in a direction perpendicular to the scanning directions are alternately changed one by one.

A lithography system includes an electron source, a lens, and a stencil mask. The electron source emits a beam of electrons. The lens converts the emitted beam of electrons into a diffuse beam of parallel electrons. The stencil mask is positioned between the lens and a semiconductor wafer with an electron-sensitive resists. The stencil mask has a pattern to selectively pass portions of the diffuse beam of parallel electrons onto the electron-sensitive resist of the wafer.

A resist composition containing a resin component having a structural unit containing a group which is dissociated under the action of an acid and compound represented by the general formula (bd1). In the formula (bd1), Rx.sup.1 to Rx.sup.4 represent a hydrocarbon group or a hydrogen atom or may be mutually bonded to form a ring structure, Ry.sup.1 to Ry.sup.2 represent a hydrocarbon group or a hydrogen atom or may be mutually bonded to form a ring structure, and Rz.sup.1 to Rz.sup.4 represent a hydrocarbon group or a hydrogen atom or may be mutually bonded to form a ring structure. At least one of Rx.sup.1 to Rx.sup.4, Ry.sup.1 to Ry.sup.2 and Rz.sup.1 to Rz.sup.4 has an anion group, the entire anion moiety may be an n-valent anion, and M.sup.m+ represents an m-valent organic cation

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An object of the present invention is to provide a chemical liquid which makes it difficult for a defect to occur on a substrate after development. Another object of the present invention is to provide a chemical liquid storage body and a pattern forming method.

The chemical liquid of the according to an embodiment of the present invention contains a main agent which is formed of one kind of organic solvent or formed of a mixture of two or more kinds of organic solvents, an impurity metal, and a surfactant, in which a vapor pressure of the main agent is 60 to 1,340 Pa at 25 C., the impurity metal contains particles containing one kind of metal selected from the group consisting of Fe, Cr, Ni, and Pb, in a case where the chemical liquid contains one kind of particles, a content of the particles in the chemical liquid is 0.001 to 30 mass ppt with respect to a total mass of the chemical liquid, and in a case where the chemical liquid contains two or more kinds of particles, a content of each kind of the particles in the chemical liquid is 0.001 to 30 mass ppt with respect to the total mass of the chemical liquid.