Systems and methods for curing a photopolymer printing plates. A radiation source, such as an UV LED source having a radiation-emitting lateral dimension in a range 10-60 cm, is spaced from a substrate that holds the printing plate. The source and substrate are configured to move relative to one another in a movement direction that defines a leading edge of the radiation source and a trailing edge of the radiation source. A cooling air handling system directs a volume of cooling air into the gap between the radiation source and the printing plate in a direction from the trailing edge to the leading edge. The cooling air handling system may have one or more outlets attached at least one edge of the source, may be configured to only direct air from the trailing edge to the leading edge, or a combination thereof.

Provided is a method of making a circuit pattern. The method includes: Step (A): providing a master substrate comprising a first photosensitive layer containing photosensitive particles; Step (B): providing an energy beam to reduce metal ions in a predetermined area of the first photosensitive layer to form multiple first metal particles; Step (C): removing unreduced photosensitive particles by a fixer to obtain a master mask; wherein the first metal particles form a first predetermined pattern in the master mask; Step (D): providing a chip comprising a second photosensitive layer containing second photosensitive particles; Step (E): putting the master mask on the second photosensitive layer and providing an energy beam to reduce metal ions of an uncovered part of the second photosensitive layer to form multiple atomized second metal particles; Step (F): removing unreduced photosensitive particles by a fixer to obtain the circuit pattern having line spacing at picoscopic/nanoscopic scale.

A process including providing a substantially flat printed image on a substrate; disposing a curable gellant composition onto the printed image in registration with the printed image, successively depositing additional amounts of the gellant composition to create a raised image in registration with the printed image; and curing the deposited raised image. A process including providing a printed image on a substrate; disposing a curable non-gellant composition onto the printed image in registration with the printed image; and disposing a curable gellant composition onto the printed image in registration with the printed image; to create a raised image in registration with the printed image; and curing the deposited raised image. An ultraviolet curable phase change gellant composition including a radiation curable monomer or prepolymer, a photoinitiator, a silicone polymer or pre-polymer, and a gellant.

A mask structure and a manufacturing method of the mask structure are provided. The mask structure includes a transparent substrate, a patterned metal layer, and a plurality of microlens structures. The patterned metal layer is disposed on the transparent substrate and exposing a portion of the transparent substrate. The microlens structures are disposed on the transparent substrate exposed by a portion of the patterned metal layer and being in contact with the portion of the patterned metal layer.

The disclosed embodiments provide a photoresist composition for extreme ultraviolet (EUV) and a method of forming a photoresist pattern using the same. The photoresist composition includes an out-of-band (OOB) absorbing material absorbing light of a wavelength of 100 nm to 300 nm.

A manufacturing method of a circuit substrate is provided. A substrate is provided. A positive photoresist layer is coated on the substrate. Once exposure process is performed on the positive photoresist layer disposed on the substrate so as to simultaneously form concaves with at least two different depths.

A system and method of leveraging sub-resolution assist feature (SRAF) to intentionally distort a feature of a pattern for identification and security purposes. A method of forming an identifier on a semiconductor structure includes: receiving, at a semiconductor manufacturing foundry, a specification of an identifier including a pattern comprising a combination of main features; designing a lithographic mask structure based on the received identifier specification, the lithographic mask structure including mask features corresponding to the specified main features and at least one sub-resolution assist feature (SRAF) structure in a geometrical relationship with a corresponding mask feature for forming, using a lithography process, a uniquely modified identifier pattern comprising a combination of modified main features; and then subsequently lithographically exposing, employing the mask structure, photoresist layers at an optical condition and subsequently developing the photoresist layers to transfer the uniquely modified identifier pattern to a surface of a semiconductor wafer.

The invention relates to a method for making a micro- or nano-scale patterned layer of material by photolitography, comprising steps of: positioning a photomask between a light source and a layer of light sensitive material, said mask comprising a support and a layer of micro- or nano-light focusing elements fixed to the support, activating the light source so that the light source emits light radiations through the mask towards a surface of the layer of light sensitive material, developing the layer of light sensitive material so as to obtain the micro- or nano-scale patterned layer of material, wherein, during exposure of the layer of light sensitive material to light radiations, the photomask is positioned relative to the light sensitive layer so that the distance between the surface of the light sensitive layer and the layer of micro- or nano-light focusing elements is greater than a back focal length of the micro- or nano-light focusing elements.

A photolithography mask plate, the photolithography mask plate including: a substrate; a carbon nanotube layer on the substrate; a patterned chrome layer on the carbon nanotube layer, wherein the patterned chrome layer and the carbon nanotube layer have the same pattern; a cover layer on the patterned chrome layer.

Methods, systems, and apparatus for identifying a non-rectangular shape outline of a first field of a substrate, the first field directly adjacent to a second field; adjusting an exposure profile of an ultraviolet light beam based on the non-rectangular shape outline of the first field to provide a non-rectangular exposure profile of the ultraviolet light beam; disposing a polymerizable composition on the first field of the substrate; contacting the polymerizable composition in the first field with an imprint lithography template; and while contacting the polymerizable composition in the first field with the imprint lithography template, directing the ultraviolet light beam having the non-rectangular exposure profile towards the substrate such that the ultraviolet light beam irradiates only the first field of the substrate.