A computation device is provided for measuring the dimensions of patterns formed on a sample based on a signal obtained from a charged particle beam device. The computation device includes a positional deviation amount calculation unit for calculating the amount of positional deviation in a direction parallel to a wafer surface between two patterns having different heights based on an image acquired at a given beam tilt angle; a pattern inclination amount calculation unit for calculating an amount of pattern inclination from the amount of positional deviation using a predetermined relational expression for the amount of positional deviation and the amount of pattern inclination; and a beam tilt control amount calculation unit for controlling the beam tilt angle so as to match the amount of pattern inclination. The pattern measurement device sets the beam tilt angle to a calculated beam tilt angle, reacquires an image and measures the patterns.

The present application discloses a scanning electron microscopic direct-write lithography system based on a compliant nano servo motion system, which includes an electron chamber, an ion chamber, a specimen chamber and a control system, wherein the electron chamber includes an electron chamber housing, an electron gun, an anode, an electron beam blanker, an electromagnetic lens and an electron beam deflection coil, the ion chamber includes an ion chamber housing, an ion source, an ion beam-scanning deflection electrode and the like, the specimen chamber includes a specimen chamber housing, a secondary electron detector, a nanoscale-precision compliant servo motion stage system and the like; control system includes a computer, an electron beam scanning controller, an ion beam scanning controller and the like. An electron beam generated by the electron chamber and an ion beam generated by the ion chamber can each perform the nano direct-write fabrication, and the nanoscale-precision compliant motion stage in the specimen chamber can perform synchronized motions with the electron beam/ion beam, thereby, stitching errors are prevented from occurring in the direct-write fabrication, and thus nano direct-write lithographic fabrication can be implemented on a large area without a stitching error. In addition, the system is capable of performing an in-situ inspection during the fabrication process, thereby facilitating the real-time observation on the result of the fabrication.

A resist composition including a compound (D0) formed of an anion moiety and a cation moiety which is represented by Formula (d0), and a resin component (A1) which has a constitutional unit (a0) obtained from a compound represented by Formula (a0-1), in which a polymerizable group at a W portion is converted into a main chain, and a constitutional unit (a1) containing an acid decomposable group whose polarity is increased due to an action of an acid. In Formula (d0), R.sup.d0 represents a substituent and n represents an integer of 2 or greater. In Formula (a0-1), Wa.sup.x0 represents an (n.sub.ax0+1)-valent aromatic hydrocarbon group which may have a substituent. ##STR00001##

Disclosed is a method of manufacturing an antibacterial cover window. The method includes a first step of preparing a substrate, a second step of forming a mask pattern on the substrate through a patterning process, a third step of forming an antibacterial layer on the substrate on which the mask pattern is formed, and a fourth step of removing the mask pattern to obtain an antibacterial pattern formed on the substrate. Through the method, it is possible to produce a cover window with antibacterial patterns regularly and uniformly distributed over the entire area thereof. Thus, the cover window has long-lasting excellent antibacterial property over the entire area thereof.

A method of method of operating a multibeamlet charged particle device is disclosed. In the method, a target attached to a stage is translated, and each step of selecting beamlets, initializing beamlets, and exposing the target is repeated. The step of selecting beamlets includes passing a reconfigurable plurality of selected beamlets through the blanking circuit. The step of initializing beamlets includes pointing each of the selected beamlets in an initial direction. The step of exposing the target includes scanning each of the selected beamlets from the initial direction to a final direction, and irradiating a plurality of regions of the target on the stage with the selected beamlets.

An actinic ray-sensitive or radiation-sensitive composition contains a cation including a metal atom and a ligand, in which the number of particles in liquid having particle diameters of 0.15 μm or less included in 1 mL of the actinic ray-sensitive or radiation-sensitive composition is 10 or less.

Method of manufacturing electronic devices using a maskless lithographic exposure system using a maskless pattern writer. The method comprises generating beamlet control data for controlling the maskless pattern writer to expose a wafer for creation of the electronic devices, wherein the beamlet control data is generated based on a feature data set defining features selectable for individualizing the electronic devices, wherein exposure of the wafer according to the beamlet control data results in exposing a pattern having a different selection of the features from the feature data set for different subsets of the electronic devices.

The present invention discloses a method that combines two different hologram origination processes in a single photoresist layer by using an interlayer to transfer structures exposed by electron beam lithography into overlapped with dot-matrix hologram areas, and fabricated holographic structures are replicated in multilayer polymer films. Dot-matrix technique is low cost process, which has high origination speed and can be used for the patterning of large areas of holograms with high diffraction efficiency. Electron beam lithography allows the formation of high resolution structures. The proposed manufacturing method allows combining these two technologies so that the final security device could contain electron beam patterned high resolution diffraction gratings, computer generated holograms, as well as dot-matrix laser patterned large hologram areas with high diffraction efficiency, providing an increased level of protection.

The present invention relates to resist compostions, in particular to photoresists that can be used in photolithography, especially in the fabrication of integrated circuits and derivative products. The resist compositions of the invention include an anti-scattering component which has a significant amount of empty space, and thus fewer scattering centers, such that radiation-scattering events are more limited during exposure. Such anti-scattering effects can lead to improved resolutions by reducing the usual proximity effects associated with lithographic techniques, allowing the production of smaller, higher resolution microchips. Furthermore, certain embodiments involve anti-scattering components which are directly linked to the resist components, which can improve the overall lithographic chemistry to provide benefits both in terms of resolution and resist sensitivity.

Cantilever-Free Scanning Probe Lithography (CF-SPL) techniques are used to enable generation of 1-, 2-, 3-, and 4-D information containing patterns in a mask-free manner that, in turn, enables instantaneous change of pattern design.