The present disclosure relates to the technical field of semiconductors, and provides a method of processing a photoresist layer, and a photoresist layer. The method of processing a photoresist layer includes: forming a photoresist layer on a target layer, where the photoresist layer includes a first part away from the target layer and a second part close to the target layer; processing the photoresist layer by using a first process, such that a light absorption rate of the first part is less than a light absorption rate of the second part; performing first exposure processing on the photoresist layer to form an exposure image in the second part; and stripping the first part and performing first development processing on the photoresist layer, to pattern the second part into a photoresist pattern.

A method for critical dimension control in which a substrate is received having an underlying layer and a radiation-sensitive material layer thereon. The radiation-sensitive material is exposed through a patterned mask to a first wavelength of light in the UV spectrum, and developed a first time. The radiation-sensitive material is flood exposed to a second wavelength of light different from the first wavelength of light and developed a second time to form a pattern. Prior to flood exposure, the radiation-sensitive material has a first light wavelength activation threshold that controls generation of acid to a first acid concentration in the radiation-sensitive material layer and controls generation of photosensitizer molecules in the radiation-sensitive material layer, and a second light wavelength activation threshold different than the first light wavelength activation threshold that can excite the photosensitizer molecules resulting in the acid comprising a second acid concentration greater than the first acid concentration.

A method for critical dimension control in which a substrate is received having an underlying layer and a patterned layer formed on the underlying layer, the patterned layer including radiation-sensitive material and a pattern of varying elevation with a first critical dimension. The method further includes applying an overcoat layer over the patterned layer, the overcoat layer containing a photo agent selected from a photosensitizer generator compound, a photosensitizer compound, a photoacid generator compound, a photoactive agent, an acid-containing compound, or a combination of two or more thereof. The overcoat layer is then exposed to electromagnetic radiation, wherein the dose of electromagnetic radiation applied to different regions of the substrate is varied, and then the overcoat layer and patterned layer are heated. The method further includes developing the overcoat layer and the patterned layer to alter the first critical dimension of the patterned layer to a second critical dimension.

A method of lithography patterning includes forming a resist layer over a substrate and providing a radiation with a first exposure dose to define an opening to be formed in the resist layer. The opening is to have a target critical dimension CD.sub.1 after developed by a negativ-tone development (NTD) process. The method further includes exposing the resist layer to the radiation with a second exposure dose less than the first exposure dose and developing the resist layer in a negative-tone development process to remove unexposed portions of the resist layer, resulting in an opening between resist patterns. A critical dimension CD.sub.2 of the opening is greater than CD.sub.1 by a delta. The method further includes forming an interfacial layer on sidewalls of the resist patterns. The interfacial layer has a thickness that is substantially equal to half of the delta.

Proposed are a processing solution for reducing the incidence of pattern collapse and the number of defects in a photoresist pattern including polyhydroxystyrene using extreme ultraviolet rays as an exposure source, and a method of forming a pattern using the same. The processing solution for reducing the incidence of photoresist pattern collapse and the number of defects includes 0.0001 to 1 wt % of an alkaline material, 0.0001 to 1 wt % of an anionic surfactant, and 98 to 99.9998 wt % of water.

In a resist pattern forming process, a rinse solution comprising (A) a heat/acid-decomposable polymer and (B) an organic solvent is effective. The pattern forming process using the rinse solution is successful in forming fine feature size patterns while minimizing the occurrence of pattern collapse.

A method of making a low dimensional material chemical vapor sensor comprising providing a monolayer of a transition metal dichalcogenide, applying the monolayer to a substrate, applying a PMMA film, defining trenches, and placing the device in a n-butyl lithium (nbl) bath. A low dimensional material chemical vapor sensor comprising a monolayer of a transition metal dichalcogenide, the monolayer applied to a substrate, a region or regions of the transition metal dichalcogenide that have been treated with n-butyl lithium, the region or regions of the transition metal dichalcogenide that have been treated with n-butyl lithium have transitioned from a semiconducting to metallic phase, metal contacts on the region or regions of the transition metal dichalcogenide that have been treated with the n-butyl lithium.

There is provided a new coating liquid for resist pattern coating. A coating liquid for resist pattern coating comprising a component A that is a polymer including at least one hydroxy group or carboxy group; a component B that is a sulfonic acid of A-SO.sub.3H (where A is a linear or branched alkyl group or fluorinated alkyl group having a carbon atom number of 1 to 16, an aromatic group having at least one of the alkyl group or the fluorinated alkyl group as a substituent, or a C.sub.4-16 alicyclic group optionally having a substituent); and a component C that is an organic solvent capable of dissolving the polymer and including ether or ketone compound of R.sup.1—O—R.sup.2 and/or R.sup.1—C(═O)—R.sup.2 (where R.sup.1 is a linear, branched, or cyclic alkyl group or fluorinated alkyl group having a carbon atom number of 3 to 16; and R.sup.2 is a linear, branched, or cyclic alkyl group or fluorinated alkyl group having a carbon atom number of 1 to 16), a method of forming a resist pattern using the coating liquid, and a method for forming a reverse pattern using the coating liquid.

A plasma etch resist material modified by an inorganic protective component via sequential infiltration synthesis (SIS) and methods of preparing the modified resist material. The modified resist material is characterized by an improved resistance to a plasma etching or related process relative to the unmodified resist material, thereby allowing formation of patterned features into a substrate material, which may be high-aspect ratio features. The SIS process forms the protective component within the bulk resist material through a plurality of alternating exposures to gas phase precursors which infiltrate the resist material. The plasma etch resist material may be initially patterned using photolithography, electron-beam lithography or a block copolymer self-assembly process.

Provided are a cancer cell-trapping metal filter which has a high opening ratio, a cancer cell-trapping metal filter sheet, a cancer cell-trapping device using the cancer cell-trapping filter, and manufacturing methods therefor.

According to a cancer cell-trapping metal filter 1, openings of connected through-holes 12 that are formed in a metal sheet 11 have a wave shape, and thus it is possible to extract a CTC from other components by utilizing a hole diameter on a short-side side of the openings, and it is possible to make the connected through-holes be closer to each other due to the wave shape while maintaining a CTC trapping ability. Accordingly, it is possible to further improve the opening ratio in the cancer cell-trapping metal filter 1.