An apparatus and method for treating a substrate that implement a recipe capable of increasing an absorption amount of metal ions to the substrate are provided. The method for treating the substrate includes: ejecting a substrate treating liquid onto the substrate; rotating the substrate at a first low-speed; and when the ejecting of the substrate treating liquid has been finished, drying the substrate.

A method of operating a wet process apparatus, includes dispensing a solution from a nozzle and directing the solution to a bath through an inlet port. A purge gas is injected into the bath to force flow of the solution from the bath to a buffer tank. A condition of the fluid within the buffer tank is monitored with a sensor. The solution is circulated to a pump and then through a filter before returning the solution to the nozzle. Overflow solution is directed out of the bath via an overflow path to a drain for preventing an overflow condition.

A substrate processing method includes a preprocessing forming step of forming a preprocessing film on a surface of a substrate having the surface on which a first region and a second region in which different substances are exposed are present, a preprocessing film separating step of separating the preprocessing film from the surface of the substrate with a stripping liquid, a processing film forming step of forming a processing film on the surface of the substrate after the preprocessing film separating step, and a processing film separating step of separating the processing film from the surface of the substrate with the stripping liquid. A removal capacity for the processing film to remove the first removal target present in the second region is higher than a removal capacity for the preprocessing film to remove the first removal target present in the second region, and a removal capacity for the preprocessing film to remove the first removal target present in the first region is higher than a removal capacity for the processing film to remove the first removal target present in the first region.

Provided is a stripping method capable of stripping a resist while suppressing the time and cost of processing required for stripping, while giving sufficient consideration to the load on the environment. The resist stripping method is a method for stripping a resist film-formed on a substrate, including: a pretreatment step of exposing the resist to a heated steam in a predetermined temperature range for a predetermined time; and a stripping step of stripping the resist exposed to the heated steam in the pretreatment step by using a resist stripping liquid, wherein the predetermined temperature range and the predetermined time are set according to the resist.

A method of stripping photoresist includes the steps of pattering a photoresist located on a substrate to generate an opening showing the substrate, forming a film including a first portion located on a top surface of the photoresist and a second portion located on a surface of the substrate, attaching a tape on the first portion, removing the tape and the first portion to show the top surface of the photoresist, and contacting the top surface and a lateral surface of the photoresist with a photoresist stripping solution to strip the photoresist. The photoresist can be removed completely by increasing its contacting area with the photoresist stripping solution.

A liquid chemical processing device that reduces variation in resist removal for each substrate includes: a processing tank (10a) in which resist removal processing is performed by immersing substrates (4) in a chemical (6); a plurality of holders (22) configured to hold the substrates (4) in a vertical posture; vertical drivers (20) configured to individually and vertically drive the holders (22); and a chuck (55) configured to disengageably chuck the substrates (4), wherein the vertical drivers (20) are configured to individually and vertically move the holders (22) between an immersed position where the substrates (4) are immersed in the chemical (6) and a non-immersed position where the substrates (4) are lifted up from the chemical (6), and the substrates (4) held by the holders (22) are subjected to the resist removal processing in a single wafer manner.

This invention relates to a stripper composition for removing photoresist that may have excellent photoresist stripping force, inhibit corrosion of the under metal film in the stripping process, and effectively remove oxide, and a method for stripping photoresist using the same.

The present invention provides a method for forming a patterned polyimide layer with the use of a positive photoresist composition. The composition comprises a cresol-type novolac resin, a diazonaphthoquinone-based sensitizer and an organic solvent; based on the cresol-type novolac resin with a total amount of 100 parts by weight, the amount of the diazonaphthoquinone-based sensitizer ranges from 40 parts to 60 parts by weight, the amount of the free cresol in the cresol-type novolac resin is lower than 2 parts by weight, and the alkaline dissolution rate (ADR) of the cresol-type novolac resin in an aqueous solution of 3.5 wt % to 7 wt % tetramethylammonium hydroxide is lower than 285 Å/s. The positive photoresist composition has excellent chemical resistance to the polyimide stripper, and can specifically improve the protective ability of the photoresist layer to the low-dielectric polyimide layer, thereby optimizing the manufacturing process and quality of the patterned polyimide layer.

An object of the present invention is to provide a treatment liquid for manufacturing a semiconductor with which the occurrence of defects is suppressed such that a fine resist pattern or a fine semiconductor element can be manufactured. A treatment liquid for manufacturing a semiconductor according to an embodiment of the present invention includes: one compound (A) or two or more compounds (A) that satisfy the following requirement (a); one compound (B) or two or more compounds (B) that satisfy the following requirement (b); and one compound (C) or two or more compounds (C) selected from the group consisting of an Al compound and an NOx compound. In the treatment liquid, a total content of the compound (A) in the treatment liquid is 70.0 to 99.9999999 mass %, a total content of the compounds (B) is 10.sup.−10 to 0.1 mass %, and a ratio P of the compound (C) to the compound (B) represented by the following Expression I is 10.sup.3 to 10.sup.−6. Requirement (a): a compound that is selected from the group consisting of an amide compound, an imide compound, and a sulfoxide compound and of which a content in the treatment liquid is 5.0 to 99.9999999 mass % Requirement (b): a compound that is selected from the group consisting of an amide compound having 6 or more carbon atoms, an imide compound, and a sulfoxide compound and of which a content in the treatment liquid is 10.sup.−1 to 0.1 mass %
P=[Total Mass of Compound (C)]/[Total Mass of Compound (B)]  (Expression I)

A method of microfabrication includes depositing a photoresist film on a working surface of a semiconductor wafer, the photoresist film being sensitive to extreme ultraviolet radiation; exposing the photoresist film to a pattern of extreme ultraviolet radiation; performing a hybrid develop of the photoresist film. The hybrid develop includes executing a first development process to remove a first portion of the photoresist film; stopping the development of the photoresist film after the first development process, the photo resist film including a structure having a first critical dimension larger than a target critical dimension after the stopping; and after stopping the development, executing a second development process to remove a second portion of the photoresist film and shrinking the critical dimension of the structure from the first critical dimension to a second critical dimension that is less than the first critical dimension.