The present teachings relate to compositions for forming a negative-tone photopatternable dielectric material, where the compositions include, among other components, an organic filler and one or more photoactive compounds, and where the presence of the organic filler enables the effective removal of such photoactive compounds (after curing, and during or after the development step) which, if allowed to remain in the photopatterned dielectric material, would lead to deleterious effects on its dielectric properties.

A cleaning composition for removing plasma etching residue and/or ashing residue formed above a semiconductor substrate is provided that includes (component a) water, (component b) a hydroxylamine and/or a salt thereof, (component c) a basic organic compound, and (component d) an organic acid and has a pH of 7 to 9. There are also provided a cleaning process and a process for producing semiconductor device employing the cleaning composition.

A cleaning solution includes a first solvent having Hansen solubility parameters 25>δ.sub.d>13, 25>δ.sub.p>3, and 30>δ.sub.h>4; an acid having an acid dissociation constant, pKa, of −11<pKa<4, or a base having a pKa of 40 > pKa>9.5; and a surfactant. The surfactant is one or more of an ionic surfactant, a polyethylene oxide and a polypropylene oxide, a non-ionic surfactant, and combinations thereof.

Methods for performing a photolithographic process are disclosed. The methods facilitate the removal of photosensitive from a wafer after the photosensitive has been used as an etch mask. The photosensitive may be a negative tone photosensitive that undergoes a cross-linking process on exposure to electromagnetic energy. By limiting the cross-linking through a reduced post-exposure bake temperature and/or through reduced cross-linker loading, the photoresist, or at least a portion thereof, may have a reduced solvent strip resistance. Because of the reduced solvent strip resistance, a portion of the photosensitive may be removed using a solvent strip. After the solvent strip, a dry etch may be performed to remove remaining portions of the photoresist.

Provided are a composition for removing a photoresist and a method for removing a photoresist using the same. According to the method, a high-dose ion implanted photoresist may be effectively removed without damage such as etching or oxidation of a semiconductor substrate.

The present invention provides a chemical liquid having excellent residue removal performance, a rinsing solution, and a resist pattern forming method. The chemical liquid according to an embodiment of the present invention is a chemical liquid containing an alcohol-based solvent having a C log P value of more than −1.00 and 3.00 or less and a specific compound selected from the group consisting of a compound represented by Formula (1) and a compound represented by Formula (2), in which a content of the specific compound is 0.0010 to 10 ppb by mass with respect to a total mass of the chemical liquid.

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There is provided a mask forming method, including: forming a photosensitive organic film on a workpiece; generating a first region and a second region in the photosensitive organic film by performing a selective exposure and a post-exposure baking on the photosensitive organic film, the first region having an acidic functional group in the photosensitive organic film, and the second region having a protective group in which the acidic functional group is protected; forming a salt in the first region by causing a basic substance to permeate into the first region using a substance staying in a gaseous state or a solid state; and removing the first region by dissolving the salt in a developer.

Methods of filtering a feed comprising a liquid or a gas for or during the production of electronics, nanosystems or ultrapure water include filtering said feed using at least one filter assembly, wherein said at least one filter assembly includes at least one isoporous block copolymer filtration membrane.

An object of the present invention is to provide a treatment liquid for manufacturing a semiconductor with which the deterioration of lithographic performance or the occurrence of defects is suppressed such that a fine resist pattern or a fine semiconductor element can be manufactured. A treatment liquid for manufacturing a semiconductor according to an embodiment of the present invention includes: one compound (A) that satisfies the following requirement (a);one compound (B) or two or more compounds (B) that satisfy the following requirement (b); and one inorganic matter (C) or two or more inorganic matters (C) having any element selected from the group consisting of Al, B, S, N, and K. Here, a total content of the compound (B) in the treatment liquid is 10.sup.−10 to 0.1 mass %, and a ratio P of the inorganic matter (C) to the compound (B) represented by the following Expression I is 10.sup.3 to 10.sup.−6. Requirement (a): a compound that is selected from the group consisting of an alcohol compound, a ketone compound, and an ester compound and of which a content in the treatment liquid is 90.0 to 99.9999999 mass % Requirement (b): a compound that is selected from the group consisting of an alcohol compound having 6 or more carbon atoms, a ketone compound, an ester compound, an ether compound, and an aldehyde compound and of which a content in the treatment liquid is 10.sup.−11 to 0.1 mass %
P=[Total Mass of Inorganic Matter (C)]/[Total Mass of Compound (B)]   Expression I.

Methods of manufacturing electronic devices employing wet-strippable underlayer compositions comprising one or more condensed polymers having an organic polymer chain having pendently-bound moieties having an acidic proton and a pKa in water from −5 to 13 and having pendently-bound siloxane moieties are provided.