A method of forming patterns includes coating a metal-containing resist composition on a substrate, sequentially coating two types of compositions for removing edge beads along an edge of the substrate, performing a heat-treatment including drying and heating to form a metal-containing resist film on the substrate, and exposing and developing the metal-containing resist film to form a resist pattern; or coating a metal-containing resist composition on a substrate, coating a composition for removing edge beads along an edge of the substrate, performing a heat-treatment including drying and heating to form a metal-containing resist film on the substrate, exposing the metal-containing resist film, and developing with a developing solution composition to form a resist pattern, wherein details of the two types of compositions for removing edge beads and the developing solution composition are as described in the specification.

A filtering device is for obtaining a chemical liquid by purifying a liquid to be purified and has an inlet portion, an outlet portion, a filter A, a filter B different from the filter A, and a flow path extending from the inlet portion to the outlet portion, in which the filter A and the filter B are arranged in series between the inlet portion and the outlet portion and have, and the filter A is selected from the group consisting of predetermined filters A1, A2, and A3.

A stripping-solution machine and working method thereof are provided. The stripping-solution machine includes: a plurality stages of chambers, which are arranged sequentially in order, wherein each stage of the chamber is correspondingly connected to a storage box; at least one filter device, wherein one end of the filter device is disposed to be connected to a storage box corresponding to a current stage chamber by a first pipe, and another end of the filter device is connected to a next stage chamber by a second pipe. Furthermore, a plurality of valve switches are at least disposed on the first pipe or the second pipe.

A filtering device is for obtaining a chemical liquid by purifying a liquid to be purified and has an inlet portion, an outlet portion, a filter A, a filter B different from the filter A, and a flow path extending from the inlet portion to the outlet portion, in which the filter A and the filter B are arranged in series between the inlet portion and the outlet portion and have, and the filter A is selected from the group consisting of predetermined filters A1, A2, and A3.

There is provided a substrate processing composition for processing a substrate coated with a metal-containing resist composition. The substrate processing composition includes an organic solvent, an organic acid, and an additive. The additive includes a chelating agent made of quercetin and a derivative thereof and the content of the additive ranges 0.1 to 10% by mass relative to the total mass of the substrate processing composition.

A solution including an organic solvent (S), and an antioxidant (A), in which an antioxidant (A) includes a tocopherol compound (A1).

There provided a substrate processing composition which is a composition for processing a substrate coated with a metal-containing resist composition. The substrate processing composition includes an organic solvent, and additives, and the additives include an organic fluoro acid and an organic sulfonic acid. There is provided a substrate processing method which includes applying a metal-containing resist composition on a substrate; processing the substrate using the substrate processing composition; and forming a pattern of a metal-containing resist film on the substrate.

A storage container storing a treatment liquid for manufacturing a semiconductor. The treatment liquid for manufacturing a semiconductor includes: one compound (A) that satisfies the requirement (a); one compound (B) or two or more compounds (B) that satisfy the requirement (b); and one inorganic matter (C) or two or more inorganic matters (C) having any element selected from the group consisting of Al, B, S, N, and K. Here, a total content of the compound (B) in the treatment liquid is 10.sup.−10 to 0.1 mass %, and a ratio P of the inorganic matter (C) to the compound (B) is 10.sup.3 to 10.sup.−6.

The present disclosure relates to a thinner composition for removing a resist and a processing method of a semiconductor substrate using the thinner composition. Particularly, the thinner composition includes (a) propylene glycol monoalkyl ether, (b) propylene glycol monoalkyl ether acetate, (c) cyclohexanone, and (d) cyclopentanone. In addition, the processing method of a semiconductor substrate includes applying a resist composition on a semiconductor substrate and removing the applied resist composition using the thinner composition of the present invention.

This application relates to a photoresist removal method, including: acquiring a target wafer, a photoresist being provided on a surface of the target wafer, a surface of a photoresist layer of the photoresist being plated with a metal overhead layer; immersing the target wafer in a first organic solvent at a first temperature in a water bath for a first duration; rinsing the target wafer with a new first organic solvent in response to an end of the first duration; performing, in the first organic solvent, ultrasonic cleaning on the rinsed target wafer for a second duration based on a target ultrasonic power; removing the residual first organic solvent on the surface of the target wafer in response to an end of the second duration; and drying the target wafer with the solvent removed by simultaneous centrifugal drying and gas purging to obtain the target wafer with the photoresist removed.