A method produces a semiconductor device, the method having a step of transferring an underlayer by employing a resist underlayer film-forming composition containing a hydrolysis condensate prepared through hydrolysis and condensation of a hydrolyzable silane in a non-alcoholic solvent in the presence of a strong acid, followed by a step (G) of removing the patterned resist film, the patterned resist underlayer film, and/or particles with a sulfuric acid-hydrogen peroxide mixture (SPM) prepared by mixing of aqueous hydrogen peroxide with sulfuric acid and/or an ammonia-hydrogen peroxide mixture (SC1) prepared by mixing of aqueous hydrogen peroxide with aqueous ammonia, wherein: the hydrolyzable silane contains a hydrolyzable silane of the following Formula (1):

R.sup.1.sub.aR.sup.2.sub.bSi(R.sup.3).sub.4−(a+b)  Formula (1)

(wherein R1 is an organic group having a primary amino group, a secondary amino group, or a tertiary amino group and is bonded to a silicon atom via an Si—C bond).

A liquid processing apparatus includes a substrate holder configured to hold a substrate; a processing liquid supply configured to supply a processing liquid onto a front surface of the substrate; a gas supply configured to supply a gas onto the front surface of the substrate; and a controller. The gas supply includes a diffusion nozzle which is provided with multiple discharge openings respectively elongated at different angles with respect to the front surface of the substrate. The controller performs controlling the gas supply to jet the gas from the diffusion nozzle onto a region of the front surface of the substrate including at least a central portion thereof in a state that the processing liquid is supplied on the front surface of the substrate.

A solvent consisting essentially of: (A) a first component consisting of N,N-diethylacetamide (DEAC); (B) a second component consisting of 3-methoxy-N, N-dimethyl propionamide (M3DMPA); and (C) an optional third component consisting of one or more glycol ethers or glycol ether acetates; or a solvent consisting essentially of: (1) a first component consisting of one or more acyclic amides of Formula (I): and (2) an optional second component consisting of one or more of DEAC, M3DMPA, N,N-dimethylpropionamide, one or more glycol ethers or glycol ether acetates, and one or more cyclic amides of Formulae (II-IV). ##STR00001##

A substrate processing method includes a preprocessing forming step of forming a preprocessing film on a surface of a substrate having the surface on which a first region and a second region in which different substances are exposed are present, a preprocessing film separating step of separating the preprocessing film from the surface of the substrate with a stripping liquid, a processing film forming step of forming a processing film on the surface of the substrate after the preprocessing film separating step, and a processing film separating step of separating the processing film from the surface of the substrate with the stripping liquid. A removal capacity for the processing film to remove the first removal target present in the second region is higher than a removal capacity for the preprocessing film to remove the first removal target present in the second region, and a removal capacity for the preprocessing film to remove the first removal target present in the first region is higher than a removal capacity for the processing film to remove the first removal target present in the first region.

A fluid heating device includes an outer cylindrical member, and inner cylindrical members arranged inside the outer cylindrical member, a container in which fluid is supplied to a fluid space between an inner surface of the outer cylindrical member and outer surfaces of the inner cylindrical members, lamp heaters arranged in the inner cylindrical members, a first nozzle member arranged on a leading end side of the lamp heaters and having an air supply port, and a first guide mechanism that guides first gas supplied from the air supply port of the first nozzle member. The inner cylindrical members include a central inner cylindrical member arranged at a center of the outer cylindrical member in a plane orthogonal to a central axis of the outer cylindrical member, and a plurality of peripheral inner cylindrical members arranged around the central inner cylindrical member. The lamp heaters include a central lamp heater arranged in the central inner cylindrical member and peripheral lamp heaters respectively arranged in the plurality of peripheral inner cylindrical members. The first guide mechanism guides the first gas to a leading end side of the central lamp heater.

The present invention provides a modified repair solution, a preparation method thereof, and a method for repairing color resist. Through adding additives to a photoresist solvent, a ketone compound in the modified repair solution is adsorbed on a surface of a source/drain metal layer to chemically react with a molecular linker to form a transparent colloid. The colloid is colorless and transparent, insoluble in water and organic solvent, and has strong adsorption with aluminum. After the transparent colloid is formed, further formation of the colloid is prevented, and aluminum is prevented from contacting with alkaline modified repair chemical solution, thereby preventing aluminum from being corroded; moreover, the chemical solution can be prevented from remaining in a damaged portion of a protective layer, and reaction with aluminum at high temperatures in post processing can be prevented, thereby preventing a vertical disconnection.

A metal probe structure and a method for fabricating the same are provided. The metal probe structure includes a multi-layer substrate, a first flexible dielectric layer, a second flexible dielectric layer, and a plurality of first metal components. The first flexible dielectric layer is disposed over the multi-layer substrate and has a conductive layer formed thereover. The second flexible dielectric layer is disposed over the first flexible dielectric layer to cover the conductive layer. The plurality of first metal components is disposed over the conductive layer and partially in the second flexible dielectric layer to serve as a metal probe.

A method of producing a substrate provided with a shaped graphene material electrically conductive region is described, the method comprising applying a photoresist material to a substrate, shaping the photoresist material to cover at least part of the substrate that is not to be electrically conductive, depositing a graphene material onto the substrate over the shaped photoresist material, and subsequently removing the photoresist material. Also described are devices such as touch sensors and shaped light emitting devices manufactured using the method.

A plated silicon-based electronic cigarette atomizing chip includes the following components: a silicon substrate, wherein the silicon substrate is provided with an array of micro-pillars or an array of micro-holes, an inlet end, and an outlet end, the outer walls of the micro-pillars are plated side walls, the inner walls of the micro-holes are plated inner walls, and the array of micro-pillars defines a plurality of micro-channels or electronic cigarette liquid channels penetrating the micro-holes are provided on the silicon substrate; a glass cover, wherein the air holes passing through the glass cover are provided; and the glass cover is fixedly connected to the silicon substrate by a bonding process.

Disclosed are a substrate treating apparatus and a substrate treating method. The substrate treating apparatus includes a first process chamber configured to supply a development liquid to a substrate that is carried into the first process chamber after an exposure process is performed on the substrate, a second process chamber configured to treat the substrate through a supercritical fluid, a feeding robot configured to transfer the substrate from the first process chamber to the second process chamber, and a controller configured to control the feeding robot such that the substrate is transferred to the second process chamber in a state in which the development liquid supplied by the first process chamber resides in the substrate.