Implementations disclosed herein generally relate to systems and methods of protecting a substrate support in a process chamber from cleaning fluid during a cleaning process. The method of cleaning the process chamber includes positioning in the process chamber a cover substrate above a substrate support and a process kit that separates a purge volume from a process volume. The method of cleaning includes flowing a purge gas in the purge volume to protect the substrate support and flowing a cleaning fluid to a process volume above the cover substrate, flowing the cleaning fluid in the process volume to an outer flow path, and to an exhaust outlet in the chamber body. The purge volume is maintained at a positive pressure with respect to the process volume to block the cleaning fluid from the purge volume.

A method of manufacturing a semiconductor device, the method including forming a lower film on a substrate; forming a metal-containing photoresist material film on the lower film; patterning the metal-containing photoresist material film to form a photoresist pattern including openings therein such that a scum remains on the lower film; performing a descum operation to remove the scum from the lower film; and etching the lower film using the photoresist pattern, wherein performing the descum operation includes providing the substrate to a processing chamber; generating oxygen plasma; and reacting the scum with the oxygen plasma.

A substrate processing apparatus and a substrate processing method are provided, in which a flow rate of CO.sub.2 injected into a supercritical drying vessel is controlled through multi-level pressure control. The substrate processing method includes disposing a substrate coated with a chemical liquid in a process chamber, that includes a space in which the substrate is processed; drying the substrate by using a supercritical fluid; and taking the substrate out of the process chamber when the substrate is dried.

Embodiments of the present disclosure provide a photoresist removal method and a photoresist removal device. The photoresist removal method includes: providing a substrate and a photoresist located on the substrate; wherein the photoresist includes an inner core layer and an outer shell layer covering a surface of the inner core layer, and a concentration of ions doped in the outer shell layer is greater than a concentration of ions doped in the inner core layer; performing at least one shelling treatment on the photoresist, until the outer shell layer is completely removed; wherein one shelling treatment includes: performing a water vapor treatment on the outer shell layer to soften at least part of the outer shell layer, to form a soft outer shell layer; and removing the soft outer shell layer; and removing the inner core layer after the outer shell layer is completely removed.

The substrate processing method includes a liquid film forming step of forming a liquid film of a sulfuric acid-containing liquid on a principal surface of a substrate, an ozone-containing gas exposing step of filling an ozone-containing gas inside a processing chamber capable of housing the substrate to expose the liquid film to the ozone-containing gas, and a substrate heating step of heating the substrate in a state that the substrate is disposed inside the processing chamber which is filled with the ozone-containing gas and the liquid film is also formed on the principal surface of the substrate.

A substrate processing method includes supplying a first developer at a first temperature onto a substrate in a development device, thereby performing a development process, supplying a process fluid at a second temperature lower than the first temperature onto the substrate, thereby replacing a residue of the first developer remaining after the development process with a second developer, transferring the substrate from the development device to a supercritical drying device, and supplying, by the supercritical drying device, at least one of a supercritical fluid and a subcritical fluid onto the substrate, thereby drying the second developer.

Dry development or dry removal of metal-containing extreme ultraviolet radiation (EUV) photoresist is performed in atmospheric conditions or performed in process tools without vacuum equipment. Dry removal of the metal-containing EUV photoresist may be performed under atmospheric pressure or over-atmospheric pressure. Dry removal of the metal-containing EUV photoresist may be performed with exposure to an air environment or with non-oxidizing gases. A process chamber or module may be modified or integrated to perform dry removal of the metal-containing EUV photoresist with baking, wafer cleaning, wafer treatment, or other photoresist processing function. In some embodiments, the process chamber for dry removal of the metal-containing EUV photoresist includes a heating assembly for localized heating of a semiconductor substrate and a movable discharge nozzle for localized gas delivery above the semiconductor substrate.

A method of manufacturing a metal wire, a method of manufacturing a metal wire grid, a wire grid polarizer, and an electronic device are provided. The method of manufacturing a metal wire includes: forming a metal material layer on a base substrate; etching the metal material layer by using a composite gas including an etching gas and a coating reaction gas to form the metal wire and a protective coating layer on a surface of the metal wire.

The present application relates to a wafer processing device and a wafer processing method. The wafer processing device includes: a spraying unit configured to spray a photoresist-removing solution to remove a photoresist; and a heating unit mounted to the spraying unit and configured to heat the photoresist-removing solution to a preset temperature. According to the wafer processing device and wafer processing method of the present application, the photoresist-removing solution is heated to a preset temperature, so that the photoresist-removing solution dissolves the photoresist more rapidly and thoroughly. Therefore, the photoresist may be removed from a surface of the wafer more thoroughly, and further a yield of the wafer is increased.

A substrate processing apparatus includes a processing chamber providing a processing space for processing a substrate and processing a substrate, a substrate support configured to support the substrate, a blocking plate below the substrate support and configured to prevent supercritical fluid from being directly sprayed onto the substrate, a first supply device configured to supply supercritical fluid under a first condition to the processing chamber, a second supply device configured to supply supercritical fluid under a second condition at a higher temperature than that of supercritical fluid under the first condition to the processing chamber, a discharge device configured to discharge supercritical fluid from the processing chamber, and a control device configured to control operations of the first supply device, the second supply device, and the discharge device. The control device is configured to direct the first supply device to supply supercritical fluid prior to the second supply device.