A plasma processing method includes a substrate processing step of performing predetermined processing on a target substrate loaded into a chamber by using plasma of a hydrogen-containing gas and unloading the processed substrate from the chamber; and an in-chamber processing step of processing surfaces of components in the chamber by plasma of an oxygen-containing gas after the substrate processing step is performed at least once. The substrate processing step is performed again at least once after the in-chamber processing step.

Plasma processing apparatus for processing a workpiece are provided. In one example embodiments, a plasma processing apparatus for processing workpiece includes a processing chamber, a plasma chamber separated from the processing chamber by a separation grid, an inductively coupled plasma source configured to generate a plasma in the plasma chamber, and a gas injection insert arranged in the plasma chamber having a peripheral portion and a center portion, the center portion extends a vertical distance past the peripheral portion. The apparatus includes a pedestal disposed within the processing chamber configured to support a workpiece, a first gas injection zone configured to inject a process gas into the process chamber at a first flat surface, and a second gas injection zone configured to inject a process gas into the process chamber at a second flat surface. The separation grid has a plurality of holes configured to allow the passage of neutral particles generated in the plasma to the processing chamber.

The present disclosure provides techniques for suppression of hydrogen degradation. In some embodiments, a method for decreasing the amount or rate of hydrogen degradation of a material, includes: (a) exposing a material to gaseous hydrogen peroxide; (b) forming a hydroxyl layer on the surface of the material within a chamber; and (c) after forming the hydroxyl layer, exposing the material to hydrogen during a controlled process or application.

A substrate processing apparatus and method for effectively removing an organic material such as a photoresist without using sulfuric acid are provided. The substrate processing apparatus includes a support module, in which a substrate is inverted and seated, and an ultraviolet light source is installed, wherein the substrate is arranged so that one surface of the substrate faces the support module, and the ultraviolet light source irradiates ultraviolet rays to one surface of the substrate; a nozzle installed in the support module; and a fluid supply module for supplying a fluid to one surface of the substrate through the nozzle.

A substrate processing method includes providing a surface tension reducing agent as a gas onto a substrate, the substrate having an exposed photoresist layer and layer of developer on the exposed photoresist layer, and causing a bulk flow of the developer in order to remove the developer from the substrate.

A patterned photo resist layer (for example an EUV photo resist layer), which may exhibit line width roughness (LWR) and line edge roughness (LER) or scum is treated with a plasma treatment before subsequent etching processes. The plasma treatment reduces LWR, LER, and/or photo resist scum. In one exemplary embodiment, the plasma treatment may include a plasma formed using a gas having a boron and halogen compound. In one embodiment, the gas compound may be a boron and chlorine compound, for example boron trichloride (BCl.sub.3) gas. In another embodiment, the gas compound may be a boron and fluorine compound, for example B.sub.xF.sub.y gases. The plasma treatment process may modify the photoresist surface to improve LWR, LER, and scum effects by removing roughness from the photo resist surface and removing photo resist residues which may case scumming.

A method of forming a pattern on a substrate, the method including: forming a photoresist underlayer over a surface of the substrate, wherein the photoresist underlayer is formed from a composition comprising a polymer and a solvent, and the photoresist underlayer has a carbon content of greater than 47 at %; subjecting the photoresist underlayer to a a metal precursor, where the metal precursor infiltrates a free volume of the photoresist underlayer; and exposing the metal precursor-treated photoresist underlayer to an oxidizing agent to provide a metallized photoresist underlayer.

The present disclosure provides techniques for suppression of hydrogen degradation. In some embodiments, a method for decreasing the amount or rate of hydrogen degradation of a material, includes: (a) exposing a material to gaseous hydrogen peroxide; (b) forming a hydroxyl layer on the surface of the material within a chamber; and (c) after forming the hydroxyl layer, exposing the material to hydrogen during a controlled process or application.

A method of forming a hole injection layer, a hole injection layer ink composition, and a light-emitting device manufactured by using the hole injection layer ink composition.

A hot plate of a resist removing apparatus is disposed in a processing space and heated to a predetermined temperature. A substrate has on an upper surface thereof, a pattern of a resist having a surface on which an altered layer is formed. A moving mechanism moves a plurality of lift pins relative to a hot plate. An upper surface of the substrate is supplied with ozone gas. A control part disposes the substrate at a first processing position with a clearance from the hot plate and removes the altered layer by using the ozone gas, and subsequently controls the moving mechanism to dispose the substrate at a second processing position with a clearance smaller than that between the first processing position and the hot plate and removes the resist by using the ozone gas. It is thereby possible to efficiently remove the resist from the substrate while preventing popping.