A refractive projection lens for imaging a pattern in an object plane of the projection lens into an image plane of the projection lens via electromagnetic radiation of a mercury vapor lamp includes a multiplicity of lens elements are arranged along an optical axis between the object and image planes. The lens elements image a pattern in the object plane into the image plane with a reducing imaging scale. The lens elements include first lens elements made of a first material with a relatively low Abbe number and a second lens elements made of a second material with a higher Abbe number relative to the first material.

A method of method of operating a multibeamlet charged particle device is disclosed. In the method, a target attached to a stage is translated, and each step of selecting beamlets, initializing beamlets, and exposing the target is repeated. The step of selecting beamlets includes passing a reconfigurable plurality of selected beamlets through the blanking circuit. The step of initializing beamlets includes pointing each of the selected beamlets in an initial direction. The step of exposing the target includes scanning each of the selected beamlets from the initial direction to a final direction, and irradiating a plurality of regions of the target on the stage with the selected beamlets.

A method for forming a light-transmissive member includes irradiating a principal surface of a cured resin body containing a silicone resin with ultraviolet rays through a photomask comprising one or more light-blocking regions and one or more light-transmissive regions, so as to cause a height of one or more first regions of the principal surface, which correspond to the one or more light-blocking regions of the photomask, to be different than a height of one or more second regions of the principal surface, which correspond to the one or more light-transmissive regions of the photomask.

An etch process that includes removing an oxide containing surface layer from a semiconductor surface to be etched by applying a hydrofluoric (HF) based chemistry, wherein the hydrofluoric (HF) based chemistry terminates the semiconductor surface to be etched with silicon-hydrogen bonds, and applying a vapor priming agent bearing chemical functionality based on the group consisting of alkynes, alcohols and a combination thereof to convert the silane terminated surface to a hydrophobic organic surface. The method continues with forming a photoresist layer on the hydrophobic organic surface; and patterning the photoresist layer. Thereafter, the patterned portions of the photoresist are developed to provide an etch mask. The portions of the semiconductor surface exposed by the etch mask are then etched.

The present invention provides a lamp device comprising: a glass tube configured to cover a discharge space in which a pair of electrodes are arranged so as to face each other; and a bayonet cap portion provided in an end portion of the glass tube and electrically connected to one electrode of the pair of electrodes, wherein the bayonet cap portion is formed to have a shape including a bottom surface and a peripheral surface, and includes, in the bottom surface, a first opening configured to supply a gas to an inside of the bayonet cap portion and a second opening configured to exhaust the gas from the inside of the bayonet cap portion.

There is provided a substrate processing apparatus including: a holder configured to hold a substrate having a pattern formed with a resist material for ArF immersion lithography on a surface of the substrate inside a processing container; a rotation driver configured to rotate the holder; and a light source part having a plurality of light sources configured to irradiate the surface of the substrate held by the holder which is rotated by the rotation driver wherein the light sources include irradiating vacuum ultraviolet light, wherein an amount of irradiation of an inner side of the substrate with light from the light source part is made larger than an amount of irradiation of an outer side of the substrate with light from the light source part.

An LED wafer edge exposure apparatus may be used to emit light on a workpiece (such as a silicon wafer with a photoresist layer) during a manufacturing process (such as an edge exposure process or photolithography process) of semiconductors (such as computer chips). The LED wafer edge exposure apparatus may be created by exchanging an existing light source, e.g., a mercury vapor lamp, with a replacement light source, e.g., an LED light source in a high energy wafer edge exposure apparatus.

An exposure apparatus and method. The exposure apparatus includes a control system, light source system, plurality of illumination systems and plurality of projection objective lenses. The light source system is configured to emit a plurality of first illumination beams incident on the illumination systems. Each illumination system includes a variable attenuator and branch energy detector. The branch energy detector is configured to detect an illuminance level of a second illumination beam generated in the corresponding illumination system and feed it back to the control system. The control system is configured to adjust the illuminance levels of the second illumination beams in the respective illumination systems by controlling the respective variable attenuators therein. The exposure apparatus and method have improved exposure performance and allow finer and faster energy adjustments, thus enabling precise control and higher exposure accuracy.

According to one embodiment, a multi-electron beam device includes at least: a light-emitting element array; a drive circuit controlling the light-emitting element array in a desired light emission pattern; a photoelectric film emitting electrons due to light emitted by the light-emitting elements; a microchannel plate having microchannels multiplying the electrons, the microchannels being arranged at positions corresponding to the light-emitting elements of the light-emitting element array; and an aperture array having apertures arranged at positions corresponding to the microchannels, the apertures being narrower than output apertures of the microchannels and limiting electron beam sizes emitted from the microchannel plate. At least the photoelectric film, the microchannel plate, and the aperture array are disposed inside a vacuum optical column.

An exposure device is provided, including: a body tube depressurized to produce a vacuum state therein; a plurality of charged particle beam sources that are provided in the body tube, and emit a plurality of charged particle beams in a direction of extension of the body tube; a plurality of electromagnetic optical elements, each being corresponding to one of the plurality of charged particle beams in the body tube, and controls the one of the plurality of charged particle beams; first and second partition walls that are arranged separately from each other in the direction of extension in the body tube, and form non-vacuum spaces between at least parts of the first and second partition walls; and a depressurization pump that depressurizes a non-vacuum space that contacts the first partition wall and a non-vacuum space that contacts the second partition wall to an air pressure between zero and atmospheric pressure.