According to one embodiment, a multi-electron beam device includes at least: a light-emitting element array; a drive circuit controlling the light-emitting element array in a desired light emission pattern; a photoelectric film emitting electrons due to light emitted by the light-emitting elements; a microchannel plate having microchannels multiplying the electrons, the microchannels being arranged at positions corresponding to the light-emitting elements of the light-emitting element array; and an aperture array having apertures arranged at positions corresponding to the microchannels, the apertures being narrower than output apertures of the microchannels and limiting electron beam sizes emitted from the microchannel plate. At least the photoelectric film, the microchannel plate, and the aperture array are disposed inside a vacuum optical column.

A system for pumping laser sustained plasma and enhancing one or more selected wavelengths of output illumination generated by the laser sustained plasma is disclosed. In embodiments, the system includes one or more pump modules configured to generate pump illumination for the laser sustained plasma and one or more enhancing illumination sources configured to generate enhancing illumination at one or more selected wavelengths. The pump illumination may be directed along one or more pump illumination paths that are non-collinear to an output illumination path of the output illumination. The enhancing illumination may be directed along an illumination path that is collinear to the output illumination path of the output illumination so that the enhancing illumination is combined with the output illumination, thereby enhancing the output illumination at the one or more selected wavelengths.

A mirror for extreme ultraviolet light includes: a substrate; a multilayer film provided on the substrate and configured to reflect extreme ultraviolet light; and a capping layer provided on the multilayer film, and the capping layer includes a photocatalyst layer containing a photocatalyst, a promotor layer arranged between the photocatalyst layer and the multilayer film and containing a metal for supporting a photocatalytic ability of the photocatalyst contained in the photocatalyst layer, and a barrier layer arranged between the promotor layer and the multilayer film and configured to prevent diffusion of the metal into the multilayer film.

A multi-charged particle beam writing apparatus according to one aspect of the present invention includes a region setting unit configured to set, as an irradiation region for a beam array to be used, the region of the central portion of an irradiation region for all of multiple beams of charged particle beams implemented to be emittable by a multiple beam irradiation mechanism, and a writing mechanism, including the multiple beam irradiation mechanism, configured to write a pattern on a target object with the beam array in the region of the central portion having been set in the multiple beams implemented.

An etch process that includes removing an oxide containing surface layer from a semiconductor surface to be etched by applying a hydrofluoric (HF) based chemistry, wherein the hydrofluoric (HF) based chemistry terminates the semiconductor surface to be etched with silicon-hydrogen bonds, and applying a vapor priming agent bearing chemical functionality based on the group consisting of alkynes, alcohols and a combination thereof to convert the silane terminated surface to a hydrophobic organic surface. The method continues with forming a photoresist layer on the hydrophobic organic surface; and patterning the photoresist layer. Thereafter, the patterned portions of the photoresist are developed to provide an etch mask. The portions of the semiconductor surface exposed by the etch mask are then etched.

An exposure device is provided, including: a body tube depressurized to produce a vacuum state therein; a plurality of charged particle beam sources that are provided in the body tube, and emit a plurality of charged particle beams in a direction of extension of the body tube; a plurality of electromagnetic optical elements, each being corresponding to one of the plurality of charged particle beams in the body tube, and controls the one of the plurality of charged particle beams; first and second partition walls that are arranged separately from each other in the direction of extension in the body tube, and form non-vacuum spaces between at least parts of the first and second partition walls; and a depressurization pump that depressurizes a non-vacuum space that contacts the first partition wall and a non-vacuum space that contacts the second partition wall to an air pressure between zero and atmospheric pressure.

The disclosed embodiments relate to a charged particle source module for generating and emitting a charged particle beam, such as an electron beam, comprising: a frame including a first frame part, a second frame part, and one or more rigid support members which are arranged between said first frame part and said second frame part; a charged particle source arrangement for generating a charged particle beam, such as an electron beam, wherein said charged particle source arrangement, such as an electron source, is arranged at said second frame part; and a power connecting assembly arranged at said first frame part, wherein said charged particle source arrangement is electrically connected to said connecting assembly via electrical wiring.

An etch process that includes removing an oxide containing surface layer from a semiconductor surface to be etched by applying a hydrofluoric (HF) based chemistry, wherein the hydrofluoric (HF) based chemistry terminates the semiconductor surface to be etched with silicon-hydrogen bonds, and applying a vapor priming agent bearing chemical functionality based on the group consisting of alkynes, alcohols and a combination thereof to convert the silane terminated surface to a hydrophobic organic surface. The method continues with forming a photoresist layer on the hydrophobic organic surface; and patterning the photoresist layer. Thereafter, the patterned portions of the photoresist are developed to provide an etch mask. The portions of the semiconductor surface exposed by the etch mask are then etched.

A refractive projection lens for imaging a pattern in an object plane of the projection lens into an image plane of the projection lens via electromagnetic radiation of a mercury vapor lamp includes a multiplicity of lens elements are arranged along an optical axis between the object and image planes. The lens elements image a pattern in the object plane into the image plane with a reducing imaging scale. The lens elements include first lens elements made of a first material with a relatively low Abbe number and a second lens elements made of a second material with a higher Abbe number relative to the first material.

A radiometer probe for matching a spectral sensitivity of a dry-film resist is provided. The radiometer probe includes a light probe and a filter-diffuser assembly connected to the light probe. The filter-diffuser assembly includes a filter housing configured to receive an optical diffuser positioned on a filter. The optical diffuser and the filter are separated by a spacer.