An etch process that includes removing an oxide containing surface layer from a semiconductor surface to be etched by applying a hydrofluoric (HF) based chemistry, wherein the hydrofluoric (HF) based chemistry terminates the semiconductor surface to be etched with silicon-hydrogen bonds, and applying a vapor priming agent bearing chemical functionality based on the group consisting of alkynes, alcohols and a combination thereof to convert the silane terminated surface to a hydrophobic organic surface. The method continues with forming a photoresist layer on the hydrophobic organic surface; and patterning the photoresist layer. Thereafter, the patterned portions of the photoresist are developed to provide an etch mask. The portions of the semiconductor surface exposed by the etch mask are then etched.

An etch process that includes removing an oxide containing surface layer from a semiconductor surface to be etched by applying a hydrofluoric (HF) based chemistry, wherein the hydrofluoric (HF) based chemistry terminates the semiconductor surface to be etched with silicon-hydrogen bonds, and applying a vapor priming agent bearing chemical functionality based on the group consisting of alkynes, alcohols and a combination thereof to convert the silane terminated surface to a hydrophobic organic surface. The method continues with forming a photoresist layer on the hydrophobic organic surface; and patterning the photoresist layer. Thereafter, the patterned portions of the photoresist are developed to provide an etch mask. The portions of the semiconductor surface exposed by the etch mask are then etched.

A multi-charged particle beam writing apparatus according to one aspect of the present invention includes a region setting unit configured to set, as an irradiation region for a beam array to be used, the region of the central portion of an irradiation region for all of multiple beams of charged particle beams implemented to be emittable by a multiple beam irradiation mechanism, and a writing mechanism, including the multiple beam irradiation mechanism, configured to write a pattern on a target object with the beam array in the region of the central portion having been set in the multiple beams implemented.

Disclosed herein a vacuum ultra violet light source device that is capable of suppressing an amount of ozone generation when the vacuum ultra violet light is emitted into an atmosphere containing oxygen, a light irradiation device incorporating the vacuum ultra violet light device, and a method of patterning a self-assembled monolayer employing the light irradiation device. The light irradiation device is configured to irradiate a self-assembled monolayer (SAM) formed on a workpiece with light containing vacuum ultra violet light through a mask M on which a prescribed pattern is formed so as to perform a patterning process of the SAM. The light containing the vacuum ultra violet light to be irradiated onto the SAM is light that is pulsed light and has a duty ratio of light emission equal to or greater than 0.00001 and equal to or less than 0.01.

An ignition facilitated electrodeless sealed high intensity illumination device is configured to receive a laser beam from a continuous wave (CW) laser light source. A sealed chamber is configured to contain an ionizable medium. The chamber has an ingress window disposed within a wall of a chamber interior surface configured to admit the laser beam into the chamber, a plasma sustaining region, and a high intensity light egress window configured to emit high intensity light from the chamber. The CW laser beam is producible by a CW laser below 250 Watts configured to produce a wavelength below 1100 nm. The device is configured to focus the laser beam to a full width at half maximum (FWHM) beam waist of 1-15 microns.sup.2 and a Rayleigh length of 6 microns or less, and the plasma is configured to be ignited by the CW laser beam.

An etch process that includes removing an oxide containing surface layer from a semiconductor surface to be etched by applying a hydrofluoric (HF) based chemistry, wherein the hydrofluoric (HF) based chemistry terminates the semiconductor surface to be etched with silicon-hydrogen bonds, and applying a vapor priming agent bearing chemical functionality based on the group consisting of alkynes, alcohols and a combination thereof to convert the silane terminated surface to a hydrophobic organic surface. The method continues with forming a photoresist layer on the hydrophobic organic surface; and patterning the photoresist layer. Thereafter, the patterned portions of the photoresist are developed to provide an etch mask. The portions of the semiconductor surface exposed by the etch mask are then etched.

An etch process that includes removing an oxide containing surface layer from a semiconductor surface to be etched by applying a hydrofluoric (HF) based chemistry, wherein the hydrofluoric (HF) based chemistry terminates the semiconductor surface to be etched with silicon-hydrogen bonds, and applying a vapor priming agent bearing chemical functionality based on the group consisting of alkynes, alcohols and a combination thereof to convert the silane terminated surface to a hydrophobic organic surface. The method continues with forming a photoresist layer on the hydrophobic organic surface; and patterning the photoresist layer. Thereafter, the patterned portions of the photoresist are developed to provide an etch mask. The portions of the semiconductor surface exposed by the etch mask are then etched.

A cooling apparatus for cooling a light source unit is provided. The cooling apparatus includes a cooling unit provided outside a path of light from the light source unit, and a heat pipe configured to connect a heat generating portion of the light source unit and the cooling unit. The heat pipe also serves as an electrode wire of the light source unit.

Provided is an illumination optical system that illuminates a target illumination region by using light emitted from a discharge lamp. The system includes a condensing mirror that condenses the light from the discharge lamp, an optical integrator which has a polygonal cross-sectional shape and is arranged on an optical path from the condensing mirror to the target illumination region, an imaging optical system that forms an image on the target illumination region with respect to an exit end face of the optical integrator as an object plane, and a power supply cable connecting to an electrode of the discharge lamp across the optical path directed from the condensing mirror to the optical integrator. The cable is arranged so that a shadow of the cable is neither parallel nor perpendicular to each side of the polygon of an entrance surface of the optical integrator.

A radiation source apparatus comprising: a container comprising walls for defining a space for containing a gaseous medium in which plasma which emits plasma emitted radiation is generated following excitation of the gaseous medium by a driving radiation; and a thermal load applicator adapted to apply a thermal load to at least part of the walls of the container to reduce stresses in the walls.