Disclosed is a metrology apparatus for use in a lithographic manufacturing process. The metrology apparatus comprises a radiation source comprising a drive laser having an output split into a plurality of optical paths, each comprising a respective broadband light generator. The metrology apparatus further comprises illumination optics for illuminating a structure, at least one detection system for detecting scattered radiation, having been scattered by the structure and a processor for determining a parameter of interest of the structure from the scattered radiation.

Embodiments described herein provide a method of large area lithography to decrease widths of portions written into photoresists. One embodiment of the method includes projecting an initial light beam of a plurality of light beams at a minimum wavelength to a mask in a propagation direction of the plurality of light beams. The mask has a plurality of dispersive elements. A wavelength of each light beam of the plurality of light beams is increased until a final light beam of the plurality of light beams is projected at a maximum wavelength. The plurality of dispersive elements of the mask diffract the plurality of light beams into order mode beams to produce an intensity pattern in a medium between the mask and a substrate having a photoresist layer disposed thereon. The intensity pattern having a plurality of intensity peaks writes a plurality of portions in the photoresist layer.

One of gamma ray lithography systems includes a gamma ray generator and a wafer stage. The gamma ray generator is configured to generate a substantially uniform gamma ray. The gamma ray generator includes a plurality of gamma ray sources and a rotational carrier. The rotational carrier is configured to hold the gamma ray sources and rotate along a rotational axis. The wafer stage is disposed below the gamma ray generator and configured to secure a wafer.

Disclosed are systems and methods for achieving sub-diffraction limit resolutions in lithography. In one embodiment, a lithography system is disclosed. The system includes, a first light source, configured to generate excitation laser beams; a second light source, configured to generate depletion laser beams; one or more scattering mediums configured to receive one or more of the excitation laser beams and depletion laser beams and scramble the laser beams; one or more wave-front shaping modules, configured to receive the scrambled laser beams, descramble the laser beams and generate one or more focused laser beams; a numerical aperture device configured to receive the one or more focused laser beams and generate a focused point on a substrate.

Light emission apparatus for an exposure machine is proposed. The light emission apparatus includes: a supporter; a plurality of light emission units individually installed on a first surface of the supporter and each having a plurality of light emitters generating light; and a plurality of reflectors individually installed on the first surface of the supporter to correspond to the light emission units, respectively, in which the reflectors are divided into a first reflective group in which reference axes of reflective beams are horizontal and a second reflective group in which reference axes of reflective beams are inclined.

An apparatus comprises an array of light emitting diodes (LEDs), each LED in the array having an asymmetric optical characteristic. The asymmetric optical characteristic of a first subset of LEDs in the array is oriented at an angle of 90°, 180°, or 270° with respect to the asymmetrical optical characteristic of a second subset of LEDs in the array. The apparatus may be the array of LEDs or an illumination system comprising a light source comprising the array of LEDs. Methods of manufacturing the apparatus are also provided.

An optical lithography system is provided, comprising: a polygonal structure having a central region and a central axis; an UV light source detachably disposed in the central region or at an end of the polygonal structure; a light parallelizer positioned in the polygonal structure for creating substantially parallel light rays from the UV light source exiting the polygonal structure before reaching a lithography target adjacent to an exit of the polygonal structure, which includes at least three mirrors arranged such that the first mirror receives incident light from the UV light source and reflects thereof from the first mirror towards the second mirror, the second mirror receiving the reflected light as a second incident light and reflecting thereof from the second mirror towards the third mirror to create a spiral light path from the UV light source to the lithography target with substantially parallel light incident on the lithography target.

Embodiments described herein provide a method of large area lithography to decrease widths of portions written into photoresists. One embodiment of the method includes projecting an initial light beam of a plurality of light beams at a minimum wavelength to a mask in a propagation direction of the plurality of light beams. The mask has a plurality of dispersive elements. A wavelength of each light beam of the plurality of light beams is increased until a final light beam of the plurality of light beams is projected at a maximum wavelength. The plurality of dispersive elements of the mask diffract the plurality of light beams into order mode beams to produce an intensity pattern in a medium between the mask and a substrate having a photoresist layer disposed thereon. The intensity pattern having a plurality of intensity peaks writes a plurality of portions in the photoresist layer.

An optical lithography system is provided, comprising: a polygonal structure having a central region and a central axis; an UV light source detachably disposed in the central region or at an end of the polygonal structure; a light parallelizer positioned in the polygonal structure for creating substantially parallel light rays from the UV light source exiting the polygonal structure before reaching a lithography target adjacent to an exit of the polygonal structure, which includes at least three mirrors arranged such that the first mirror receives incident light from the UV light source and reflects thereof from the first mirror towards the second mirror, the second mirror receiving the reflected light as a second incident light and reflecting thereof from the second mirror towards the third mirror to create a spiral light path from the UV light source to the lithography target with substantially parallel light incident on the lithography target.

Disclosed is a metrology apparatus for use in a lithographic manufacturing process. The metrology apparatus comprises a radiation source comprising a drive laser having an output split into a plurality of optical paths, each comprising a respective broadband light generator. The metrology apparatus further comprises illumination optics for illuminating a structure, at least one detection system for detecting scattered radiation, having been scattered by the structure and a processor for determining a parameter of interest of the structure from the scattered radiation.