To uniformize the light intensity distribution on an irradiated surface in a light source device including a light-emitting diode (LED) array, a light source device includes a light-emitting diode (LED) array including a circuit having a substrate, a plurality of LED chips on the substrate, and a power supply. A predetermined plane is illuminated with light from the LED array. The plurality of LED chips includes first LED chips and second LED chips different from the first LED chips placed in a same column of the circuit, and the first LED chips have a placement angle different from a placement angle of the second LED chips.

A reflective mask-less laser direct imaging system includes laser equipment that includes laser light sources, focusing lenses, a scanner and a compensating lens. The focusing lenses focus light beams onto a photosensitive layer of a substrate from the laser light sources. The scanner includes a rotatable polygonal mirror formed with multiple facets used to reflect the light beams to the substrate from the focusing lenses. The compensating lens includes a convex surface pointed at the polygonal mirror and a flat surface pointed at the compensating lens. The light beams go from the polygonal mirror into the compensating lens via the convex surface. The light beams leave the compensating lens via the flat surface before heading for the substrate.

A system comprises a plurality of laser generators, each generating a coherent beam, the plurality of laser generators arranged such that at least two of the generated coherent beams intersect with each other. The system further comprises an anti-refraction prism. The anti-refraction prism has a plurality of incident surfaces. The anti-refraction prism also has an egress surface facing a photosensitive film layer, with the coherent beams interfering within the anti-refraction prism and exiting at the egress surface to create an interference exposure pattern at an exposure region of the photosensitive film layer. Furthermore, the anti-refraction prism has a refraction index within a threshold range of the refraction index of the photosensitive film layer, and wherein the anti-refraction prism reduces a change in angle of each coherent beam in the photosensitive film layer due to refraction.

An ultraviolet (UV) light source is provided. The device uses a high-uniformity diode array. A lens unit of collimated illumination lenses is used. A light source of UV light-emitting diode (UVLED) array is formed and passes through the lens unit to uniformly distribute the light source and obtain a collimated light. The present invention comprises a light source of UVLED array; a collimated illumination lens unit; and a substrate. The construction is simple. The present invention can be applied in the lithography of a semiconductor. The lithography forms contact lines of widths not greater than 3 microns (m); soft-contact lines of widths of 330 m; and short-spaced lines of widths of 30200 m. The present invention avoids the mask from contact wear-out for multiple uses, and further reduces the replacement rate.

An LED wafer edge exposure apparatus may be used to emit light on a workpiece (such as a silicon wafer with a photoresist layer) during a manufacturing process (such as an edge exposure process or photolithography process) of semiconductors (such as computer chips). The LED wafer edge exposure apparatus may be created by exchanging an existing light source, e.g., a mercury vapor lamp, with a replacement light source, e.g., an LED light source in a high energy wafer edge exposure apparatus.

One of gamma ray lithography systems includes a gamma ray generator and a wafer stage. The gamma ray generator is configured to generate a substantially uniform gamma ray. The gamma ray generator includes a plurality of gamma ray sources and a rotational carrier. The rotational carrier is configured to hold the gamma ray sources and rotate along a rotational axis. The wafer stage is disposed below the gamma ray generator and configured to secure a wafer.

An imaging apparatus for exposing a pattern onto a substrate has an illumination source that is energizable to generate a polarized exposure illumination beam of an actinic wavelength range and a mask disposed to impart the pattern to the polarized exposure illumination beam. A polarization beam splitter defines an illumination path that conveys the generated polarized exposure illumination beam through a quarter wave plate and plano-convex lens and toward a concave mirror and further conveys a reflected exposure illumination beam from the concave mirror toward an exposure plane for exposing the imparted pattern onto the substrate. The exposure plane is defined by the concave mirror, the plano convex lens, and the polarization beam splitter.

An exposure apparatus and method. The exposure apparatus includes a control system, light source system, plurality of illumination systems and plurality of projection objective lenses. The light source system is configured to emit a plurality of first illumination beams incident on the illumination systems. Each illumination system includes a variable attenuator and branch energy detector. The branch energy detector is configured to detect an illuminance level of a second illumination beam generated in the corresponding illumination system and feed it back to the control system. The control system is configured to adjust the illuminance levels of the second illumination beams in the respective illumination systems by controlling the respective variable attenuators therein. The exposure apparatus and method have improved exposure performance and allow finer and faster energy adjustments, thus enabling precise control and higher exposure accuracy.

An exposure apparatus includes: a first light source that generates first exposure light, a diaphragm having plurality of openings positioned between the first light source and an exposure photomask, a plurality of first projection optical systems that individually project an optical image realized by the first exposure light transmitted through each of the plurality of openings on an exposure target, a second light source that generates second exposure light, and a correction stepper. The correction stepper irradiates a light amount correction region with the second exposure light so as to limit an irradiation range of the exposure target to be irradiated with the second exposure light transmitted through the exposure photomask, and the light amount correction region is a region extending in a first direction by a width of a multi-opening region in a second direction in a plan view.

A method for exposing a light-sensitive layer to light using an optical system, wherein at least one light beam is generated by respectively at least one light source and pixels of an exposure pattern grid are illuminated by at least one micro-mirror device with a plurality of micro-mirrors. An affine distortion takes place, in particular a shearing, of the exposure pattern grid.