The present disclosure relates to lithographic apparatuses and processes, and more particularly to tools for optimizing illumination sources and masks for use in lithographic apparatuses and processes. According to certain aspects, the present disclosure significantly speeds up the convergence of the optimization by allowing direct computation of gradient of the cost function. According to other aspects, the present disclosure allows for simultaneous optimization of both source and mask, thereby significantly speeding the overall convergence. According to still further aspects, the present disclosure allows for free-form optimization, without the constraints required by conventional optimization techniques.

A microlithography illumination optical system is used to guide illumination light from a primary light source to an object field. A mirror array of the illumination optical system has a plurality of individual mirrors, which can be tilted independently of one another by actuators and are connected to associated tilting actuators. A controller is used to activate the actuators. A raster module of the illumination optical system has a plurality of raster elements to produce a spatially distributed arrangement of secondary light sources.

An illumination optical unit comprises a first faceted element and a second faceted element having a multiplicity of displaceable micromirrors which can be grouped flexibly to form facets.

Projection exposure methods, systems, sub-systems and components are disclosed. Methods can include performing a first exposure to image a first sub-pattern of the pattern, where the first sub-pattern includes a plurality of first features extending in a first direction and spaced apart essentially periodically at a predominant periodicity length P in a second direction perpendicular to the first direction. The first exposure can be performed using a multipolar illumination mode that includes at least one substantially dipolar intensity distribution having two illumination poles positioned on a pole orientation axis substantially parallel to the second direction and spaced apart from each other.

An illumination system of a micro-lithographic projection exposure apparatus is provided, which is configured to illuminate a mask positioned in a mask plane. The system includes a pupil shaping optical subsystem and illuminator optics that illuminate a beam deflecting component. For determining a property of the beam deflecting component, an intensity distribution in a system pupil surface of the illumination system is determined. Then the property of the beam deflecting component is determined such that the intensity distribution produced by the pupil shaping subsystem in the system pupil surface approximates the intensity distribution determined before. At least one of the following aberrations are taken into account in this determination: (i) an aberration produced by the illuminator optics; (ii) an aberration produced by the pupil shaping optical subsystem; (iii) an aberration produced by an optical element arranged between the system pupil surface and the mask plane.

A raster arrangement includes at least one raster element of a first type and at least one raster element of a second type. Each raster element of the first type has a first bundle-influencing effect. Each raster element of the second type has a second bundle-influencing effect which is different from the first bundle-influencing effect. Each raster element of the first type is located in a first area of the raster arrangement. Each raster element of the second type is located in a second area of the raster arrangement which is different from the first area of the raster arrangement.

Mirror having a fragmented total surface area, wherein the fragmentation forms an aperiodic arrangement.

Aspects of the disclosed techniques relate to techniques for resist simulation in lithography. Local minimal light intensity values are determined for a plurality of sample points in boundary regions of an aerial image of a feature to be printed on a resist coating, wherein each of the local minimal light intensity values represents a minimum light intensity value for an area surrounding one of the plurality of sample points. Based on the local minimal light intensity values, horizontal development bias values for the plurality of sample points are then determined. Finally, resist contour data of the feature are determined based at least on the horizontal development bias values.

An imaging assembly for directing a pattern of energy at a workpiece includes (i) a reticle that defines a reticle array that includes a plurality of spaced apart, transmitting regions; (ii) an illumination source that generates an illumination beam; and (iii) a director assembly that selectively directs the illumination beam at the reticle array, the director assembly includes a plurality of director elements that are individually controlled to selectively control the beam pattern that is directed at the reticle array.

A method of operating a microlithographic apparatus comprises the steps of providing an illumination system comprising an array of tiltable mirrors, wherein a light irradiance distribution on the array varies by at least 50% along a first line; specifying a scan integrated target angular light distribution and a target light energy for a point moving through an illumination field along a second line that extends parallel to a scan direction and is an image of the first line; determining a group of those mirrors through which the first line extends; determining tilt angles of the mirrors of the group such that a real angular light distribution and a real light energy for the point approximate the respective target values; producing the illumination field by forming an image of the array on a mask; and imaging a portion of the mask on a surface while the mask moves along the scan direction.