A film element of an EUV-transmitting wavefront correction device is arranged in a beam path and includes a first layer of first layer material having a first complex refractive index n.sub.1=(1−δ.sub.1)+iβ.sub.1, with a first optical layer thickness, which varies locally over the used region in accordance with a first layer thickness profile, and a second layer of second layer material having a second complex refractive index n.sub.2=(1−δ.sub.2)+iβ.sub.2, with a second optical layer thickness, which varies locally over the used region in accordance with a second layer thickness profile. The first and second layer thickness profiles differ. The deviation δ.sub.1 of the real part of the first refractive index from 1 is large relative to the absorption coefficient β.sub.1 of the first layer material and the deviation δ.sub.2 of the real part of the second refractive index from 1 is small relative to the absorption coefficient β.sub.2 of the second layer material.

An illumination optical system that illuminates a target surface includes a first deflector, a second deflector, and an optical integrator. The first deflector is arranged on a first face crossing an optical path of light from a light source and has a period in a first direction defined on the first face. The second deflector is arranged on a second face crossing an optical path of light from the first deflector and has a period in a second direction defined on the second face. The optical integrator has a plurality of wavefront division facets arrayed on a third face crossing an optical axis of light from the second deflector. At least one of the first and second deflectors rotates about an optical axis of the illumination optical system or about an axis parallel to the optical axis in order to adjust a pattern of an illumination distribution.

A process of an extreme ultraviolet lithography is disclosed. The process includes receiving an extreme ultraviolet (EUV) mask, an EUV radiation source and an illuminator. The process also includes exposing the EUV mask by a radiation, originating from the EUV radiation source and directed by the illuminator, with a less-than-three-degree chief ray angle of incidence at the object side (CRAO). The process further includes removing most of the non-diffracted light and collecting and directing the diffracted light and the not removed non-diffracted light by a projection optics box (POB) to expose a target.

Provided is an exposure apparatus including a transporting section; a first polarized light output section that outputs first polarized light; a second polarized light output section that outputs second polarized light; a first mask section that has formed therein a first aperture section that passes the first polarized light for exposing an orientation film and blocks the first polarized light; and a second mask section that has formed therein a second aperture section that passes the second polarized light for exposing the orientation film and blocks the second polarized light. The first aperture section and the second aperture section are formed to expose a certain region of the orientation film in an overlapping manner.

A reticle shape regulation device includes: an adsorption device having an upper surface and a lower surface; and a limit mechanism having a limit surface. The adsorption device is movable relative to the limit mechanism at least in a vertical direction. The upper surface of the adsorption device faces toward and is engagable with the limit surface. The lower surface of the adsorption device defines a vacuum chamber that is configured for communication with a negative-pressure source so as to adsorb the reticle by a negative pressure. The lower surface of the adsorption device further defines at least one positive-pressure outlet that is in communication with a positive-pressure source and is configured to supply a continuous positive-pressure air flow between the lower surface of the adsorption device and the reticle during the adsorption of the reticle. The positive-pressure air flow is so controlled as to form an air cushion between the lower surface of the adsorption device and the reticle while allowing the adsorption of the reticle by the adsorption device. This can correct deformations of the reticle, thus enabling satisfactory flatness thereof during an exposure process, and can easily create vacuum and an air cushion between a deformed reticle and the adsorption device.

The present invention provides a lithography apparatus which performs a process of forming a pattern on a substrate conveyed from a coating apparatus which coats the substrate with a resist, the lithography apparatus including an obtaining unit configured to obtain, from the coating apparatus, first specifying information which specifies a processing target substrate conveyed from the coating apparatus to the lithography apparatus, out of a plurality of substrates which are coated with the resist by the coating apparatus and on which the process is to be performed, and a processing unit configured to select offset correction information corresponding to the processing target substrate from a plurality of pieces of offset correction information respectively corresponding to the plurality of substrates based on the first specifying information and perform the process on the processing target substrate by using the selected offset correction information.

A method for controlling a microlithographic projection exposure apparatus includes: determining a wavefront error of the projection exposure apparatus; generating a travel vector, suitable for correcting the wavefront error, with travels for each zone of the optical manipulator; establishing a constraint parameter with respect to the travel for at least one zone of the optical manipulator; and checking the travels of the generated travel vector with respect to implementability.

Disclosed is an illumination system for a metrology apparatus and a metrology apparatus comprising such an illumination system. The illumination system comprises an illumination source; and a linear variable filter arrangement configured to filter a radiation beam from said illumination source and comprising one or more linear variable filters. The illumination system is operable to enable selective control of a wavelength characteristic of the radiation beam subsequent to it being filtered by the linear variable filter arrangement.

Techniques are disclosed for magnification compensation and/or beam steering in optical systems. An optical system may include a lens system to receive first radiation associated with an object and direct second radiation associated with an image of the object toward an image plane. The lens system may include a set of lenses, and an actuator system to selectively adjust the set of lenses to adjust a magnification associated with the image symmetrically along a first and a second direction. The lens system may also include a beam steering lens to direct the first radiation to provide the second radiation. In some examples, the lens system may also include a second set of lenses, where the actuator system may also selectively adjust the second set of lenses to adjust the magnification along the first or the second direction. Related methods are also disclosed.

The invention relates to an apparatus and a method for characterizing a microlithographic mask. According to one aspect, an apparatus according to the invention comprises at least one light source which emits coherent light, an illumination optical unit which produces a diffraction-limited light spot on the mask from the coherent light of the at least one light source, a scanning device, by use of which it is possible to implement a scanning movement of the diffraction-limited light spot relative to the mask, a sensor unit, and an evaluation unit for evaluating the light that is incident on the sensor unit and has come from the mask, an output coupling element for coupling out a portion of the coherent light emitted by the at least one light source, and an intensity sensor for capturing the intensity of this output coupled portion.