A photolithography system utilizes tin droplets to generate extreme ultraviolet radiation for photolithography. The photolithography system irradiates the droplets with a laser. The droplets become energized and emit extreme ultraviolet radiation. A collector reflects the extreme ultraviolet radiation toward a photolithography target. The photolithography system reduces splashback of the tin droplets onto the receiver by generating a net electric charge within the droplets using a charge electrode and decelerating the droplets by applying an electric field with a counter electrode.

The present invention provides a deformation apparatus that deforms a surface of a member, the apparatus comprising: a plurality of actuators each of which is configured to apply a force to the member to deform the surface; a measurement device configured to measure an induced electromotive force generated in a first actuator of the plurality of actuators; and a controller configured to control the plurality of actuators, wherein the controller causes the measurement device to measure a temporal variation of an induced electromotive force in the first actuator while vibrating the member by using a second actuator, of the plurality of actuators, which is different from the first actuator, converts the measured temporal variation of the induced electromotive force into a frequency spectrum, and detects an abnormality in the first actuator based on the frequency spectrum.

An optical diffraction component is configured to suppress at least one target wavelength by destructive interference. The optical diffraction component includes at least three diffraction structure levels that are assignable to at least two diffraction structure groups. A first of the diffraction structure groups is configured to suppress a first target wavelength λ.sub.1. A second of the diffraction structure groups is configured to suppress a second target wavelength λ.sub.2, where (λ.sub.1−λ.sub.2).sup.2/(λ.sub.1+λ.sub.2).sup.2<20%. A topography of the diffraction structure levels can be described as a superimposition of two binary diffraction structure groups. Boundary regions between adjacent surface sections of each of the binary diffraction structure groups have a linear course and are superimposed on one another at most along sections of the linear course.

The present disclosure provides an interference filter, a lithography system incorporating an interference filter, and a method of fabricating an interference filter. The interference filter includes a transparent substrate having a front surface and a back surface, a plurality of alternating material layers formed over the front surface of the transparent substrate that form a bandpass filter, and an anti-reflective structure formed over the back surface of the transparent substrate. The alternating material layers alternate between a relatively high refractive index material and a relatively low refractive index material.

A super-resolution system for nano-patterning is disclosed, comprising an exposure head that enables a super-resolution patterning exposures. The super-resolution exposures are carried out using electromagnetic radiation and plasmonic structure, and in some embodiments, plasmonic structures having specially designed super-resolution apertures, of which the “bow-tie” and “C-aperture” are examples. These apertures create small but bright images in the near-field transmission pattern. A writing head comprising one or more of these apertures is held in close proximity to a medium for patterning. In some embodiments, a data processing system is provided to re-interpret the data to be patterned into a set of modulation signals used to drive the multiple individual channels and multiple exposures, and a detection means is provided to verify the data as written.

An illuminator includes a first facet mirror receiving and reflecting an exposure radiation, an adjustable shielding element disposed on the first facet mirror, the adjustable shielding element adjusting intensity uniformity of the exposure radiation reflected by the first facet mirror, and a second facet mirror receiving and reflecting the exposure radiation reflected by the first facet mirror.

An optical diffraction component has a periodic grating structure profile. The diffraction structure levels are arranged so that a wavelength range around two different target wavelengths diffracted by the grating structure profile has radiation components with three different phases that interfere destructively with one another. Diffraction structure levels predefine a topography of a grating period of the grating structure profile that is repeated regularly along a period running direction. These include a neutral diffraction structure level, a positive diffraction structure level raised relative thereto, and a negative diffraction structure level lowered relative thereto. The neutral diffraction structure level has an extent along the period running direction which is less than 50% of the extent of the grating period. A difference between the two target wavelengths is less than 50%. The result is an optical diffraction component whose possibilities for use can be extended, for example, to stray light suppression.

An optical illumination system guides EUV radiation between a source region of an EUV light source and an object field, in which an object to be imaged is arrangeable. The illumination system has at least two EUV mirror components which reflect the EUV radiation and sequentially guide the EUV radiation between the source region and the object field. An optical diffraction component for suppressing extraneous light radiation is arranged on each of the two EUV mirror components. The two optical diffraction components are designed to suppress different extraneous light wavelengths. A first of the two optical diffraction components, which is arranged on a first of the EUV mirror components, is a grating with at least one first structure depth. A second of the two optical diffraction components, which is arranged on a second of the EUV mirror components, is a grating with at least one second different structure depth. The result can be improved suppression of extraneous light.

An apparatus for generating extreme ultraviolet (EUV) light includes a raw material supply unit supplying a plasma source for generating EUV light. An EUV light source unit uses a laser to generate plasma from the plasma source. A filter is configured to extract EUV light from the light. A first protective layer is disposed on a front surface of the filter. A frame having a first region exposing at least a portion of the filter or the first protective layer is disposed on the first protective layer. A width of the first region is smaller than a width of the first protective layer and smaller than or equal to a width of the filter.

An apparatus includes a gas discharge system including a gas discharge chamber and configured to produce a light beam; and a spectral feature adjuster in optical communication with a pre-cursor light beam generated by the gas discharge chamber. The spectral feature adjuster includes: a body defining an interior that is held at a pressure below atmospheric pressure; at least one optical pathway defined between the gas discharge chamber and the interior of the body, the optical pathway being transparent to the pre-cursor light beam; and a set of optical elements within the interior, the optical elements configured to interact with the pre-cursor light beam.