An illumination system of a microlithographic projection exposure apparatus includes first and second optical raster plates. An irradiance distribution of projection light on the first and second optical raster plates determines an angular light distribution of the projection light exclusively at a first portion and a second portion, respectively, of an illuminated field. The second portion is distinct from and arranged adjacent to the first portion. It is possible to produce different illumination settings in different adjacent portions on the mask. First and second Fourier optics establish a Fourier relationship between the first and second optical raster plates one the one hand and the first and second portion on the other hand. The first and second Fourier optics have a first and second focal length, respectively, that are variable in response to a focal length change command signal from a control unit.

The disclosure provides an illumination system of a microlithographic projection device having an image plane, in which a mask can be arranged, and a first object plane, which is optically conjugate to the image plane. A first illumination optical unit illuminates the first object plane with first projection light so that the first projection light has a first illumination angle distribution in the image plane. A second illumination optical unit illuminates a second object plane, which is optically conjugate to the image plane, with second projection light so that the second projection light has a second illumination angle distribution differing from the first illumination angle distribution in the image plane. An optical integrator is arranged exclusively in the light path of the first projection light.

A beam-splitting apparatus arranged to receive an input radiation beam and split the input radiation beam into a plurality of output radiation beams. The beam-splitting apparatus comprising a plurality of reflective diffraction gratings arranged to receive a radiation beam and configured to form a diffraction pattern comprising a plurality of diffraction orders, at least some of the reflective diffraction gratings being arranged to receive a 0.sup.th diffraction order formed at another of the reflective diffraction gratings. The reflective diffraction gratings are arranged such that the optical path of each output radiation beam includes no more than one instance of a diffraction order which is not a 0.sup.th diffraction order.

A beam distribution optical unit serves for splitting an incident beam of illumination light into at least two emergent illumination-light beams. The beam distribution optical unit has at least one blazed reflection grating having reflective grating structures. The result is an optical unit in which a plurality of illumination-light beams are efficiently produced from one incident beam of illumination light.

A microlithographic projection exposure apparatus (10) includes a projection lens (26) that images an object field (22) arranged in a mask plane (24) onto a substrate (28) during exposure operation of the projection exposure apparatus, and an illumination system (16) that has: an exposure illumination beam path (44) for radiating illumination radiation (14) onto the object field on the illumination side with respect to the mask plane, a measurement illumination beam path (48) for irradiating a measurement structure (54) arranged in the mask plane with the illumination radiation, and a scattering structure (50) arranged on the illumination side with respect to the mask plane and outside the exposure illumination beam path. The measurement illumination beam path extends via the scattering structure and runs rectilinearly between the scattering structure and the mask plane.

An exposure apparatus includes a stage on which a substrate is placed, a plurality of light irradiation units configured to emit light independently of each other to different positions in a right and left direction on a surface of the substrate, so as to form a strip-like irradiation area extending from one end of the surface of the substrate to the other end of the substrate, a stage moving mechanism configured to move the stage in a back and forth direction relative to the irradiation area, such that the whole surface of the substrate is exposed, and a light receiving unit configured move in the irradiation area between one end and the other end of the irradiation area in order to detect an illuminance distribution of the irradiation area in a longitudinal direction of the irradiation area.

A pattern forming photo-curing layer is heated, thereby enabling quick shaping. A pattern manufacturing apparatus (100) includes a controller (101), a laser projector (102), and a heater (103). The controller (101) controls the laser projector (102) to form a pattern on a pattern forming sheet (130) placed on a stage (140). The laser projector (102) includes an optical engine (121), and the controller (101) controls the laser projector (102) to irradiate the pattern forming sheet (130) with a light beam from the optical engine (121). The heater (103) heats the pattern forming sheet (130).

An illumination system of a microlithographic projection exposure apparatus includes first and second optical raster plates. An irradiance distribution of projection light on the first and second optical raster plates determines an angular light distribution of the projection light exclusively at a first portion and a second portion, respectively, of an illuminated field. The second portion is distinct from and arranged adjacent to the first portion. It is possible to produce different illumination settings in different adjacent portions on the mask. First and second Fourier optics establish a Fourier relationship between the first and second optical raster plates one the one hand and the first and second portion on the other hand. The first and second Fourier optics have a first and second focal length, respectively, that are variable in response to a focal length change command signal from a control unit.

An inspection apparatus may determine precise OV measurements of a target on a substrate using an optical pupil symmetrizer to reduce the inspection apparatus's sensitivity to asymmetry and non-uniformity of the illumination beam in the pupil plane. The inspection apparatus includes an illumination system that forms a symmetrical illumination pupil by (1) splitting an illumination beam into sub-beams, (2) directing the sub-beams along different optical branches, (3) inverting or rotating at least one of the sub-beams in two dimensions, and recombining the sub-beams along the illumination path to symmetrize the intensity distribution. The illumination system is further configured such that the first and second sub-beams have an optical path difference that is greater than a temporal coherence length of the at least one beam and less than a depth of focus in the pupil plane of the objective optical system.

Maskless lithographic apparatus measuring accumulated amount of light is provided. The maskless lithographic apparatus includes a light source which emits light, a stage on which a substrate is disposed, an optical system which converts the light into a beam spot array including a plurality of columns and a plurality of rows and irradiates the beam spot array onto the stage, a slit to which the beam spot array is irradiated and which passes an nth (n is a natural number) row of the beam spot array, an optical sensor which senses the nth row of the beam spot array which has passed through the slit, and a measuring unit which measures an accumulated amount of light in the nth row of the beam spot array sensed by the optical sensor.