An overlay correcting method capable of optimizing correction of an overlay within a scanner correction limit of a scanner of a scanner system, and a photolithography method, a semiconductor device manufacturing method and the scanner system which are based on the overlay correcting method are provided. The overlay correcting method includes collecting overlay data by measuring an overlay of a pattern; calculating correction parameters of the overlay by performing regularized regression using the overlay data, the regularized regression being based on a correction limit of the scanner such that the correction parameters fall within the correction limit of the scanner; and providing the correction parameters to the scanner.

An arrangement of a microlithographic optical imaging device includes first and second supporting structures. The first supporting structure supports an optical element of the imaging device. The first supporting structure supports the second supporting structure via supporting spring devices of a vibration decoupling device. The supporting spring devices act kinematically parallel to one another between the first and second supporting structures. Each of the supporting spring devices defines a supporting force direction and a supporting length along the supporting force direction. The second supporting structure supports a measuring device which measures the position and/or orientation of the at least one optical element in relation to a reference in at least one degree of freedom up to all six degrees of freedom in space. A reduction device reduces a change in a static relative situation between the first and second supporting structures in at least one correction degree of freedom.

An optical element driving mechanism is provided. The optical element driving mechanism includes a first holder, a second holder, a plate, a biasing assembly, and an electromagnetic driving assembly. The first holder holds a first optical element with a first optical axis. The second holder holds a second optical element with a second optical axis. The plate is disposed below the first holder and the second holder. The biasing assembly forces the first holder to move relative to the plate on a plane substantially perpendicular to the first optical axis, and includes a biasing element, wherein when a driving signal is applied to the biasing element, a length of the biasing element is changed. The electromagnetic driving assembly forces the second holder to move relative to the plate and comprising a first magnetic element and a coil.

A microlithographic projection exposure apparatus comprises a projection lens for projecting structures of a mask into a substrate plane via exposure radiation. At least one optical element of the projection lens is provided with a manipulator configured for the targeted input of thermal energy into the optical element, without one of further optical elements of the projection lens being significantly heated in the process. The projection exposure apparatus furthermore comprises a control device configured for controlling the exposure radiation and for controlling the manipulator so that an effect on an optical property of the projection lens that is caused by a decrease in a thermal energy input into the projection lens due to an exposure pause is at least partly compensated for by the energy input via the manipulator. Furthermore, the disclosure relates to a corresponding method for controlling a microlithographic projection exposure apparatus.

A method for determining a wavefront parameter of a patterning process. The method includes obtaining a reference performance (e.g., a contour, EPE, CD) of a reference apparatus (e.g., a scanner), a lens model for a patterning apparatus configured to convert a wavefront parameter of a wavefront to actuator movement, and a lens fingerprint of a tuning apparatus (e.g., a to-be-matched scanner). Further, the method involves determining the wavefront parameter (e.g., a wavefront parameter such as tilt, offset, etc.) based on the lens fingerprint of the tuning apparatus, the lens model, and a cost function, wherein the cost function is a difference between the reference performance and a tuning apparatus performance.

An overlay correcting method capable of optimizing correction of an overlay within a scanner correction limit of a scanner of a scanner system, and a photolithography method, a semiconductor device manufacturing method and the scanner system which are based on the overlay correcting method are provided. The overlay correcting method includes collecting overlay data by measuring an overlay of a pattern; calculating correction parameters of the overlay by performing regularized regression using the overlay data, the regularized regression being based on a correction limit of the scanner such that the correction parameters fall within the correction limit of the scanner; and providing the correction parameters to the scanner.

A lithographic apparatus comprising a projection system comprising at least one optical component and configured to project a pattern onto a substrate. The lithographic apparatus further comprises a control system arranged to reduce the effects of heating and/or cooling of an optical component in a lithographic process. The control system is configured at least: to select at least one of a plurality of mode shapes to represent a relationship between at least one input in the lithographic process and an aberration resulting from the input and to generate and apply a correction to the lithographic apparatus based on the mode shape.

An immersion lithographic apparatus having a fluid handling structure, the fluid handling structure configured to confine immersion fluid to a region and including: a meniscus controlling feature having an extractor exit on a surface of the fluid handling structure; and a gas knife system outwards of the extractor exit and including passages each having an exit, the passages having a plurality of first passages having a plurality of corresponding first exits on the surface, and a plurality of second passages having a plurality of corresponding second exits outwards of the first exits on the surface, wherein the surface faces and is substantially parallel to a top surface of a substrate during exposure, and the first exits and the second exits are arranged at a greater distance from the substrate than the extractor exit.

An illumination optical unit for EUV projection lithography includes a field facet mirror with a plurality of field facets for guiding illumination light into an object field where a lithography mask is arrangeable. At least one spectral output coupling mirror section is arranged on the field facet mirror. The mirror section serves to output couple the spectral analysis partial beam from a beam path of the illumination light. A detector serves for the spectral analysis of the spectral analysis partial beam. This can yield an illumination optical unit in which process monitoring during the projection exposure is improved.

A method at tuning a lithographic process for a particular patterning device. The method includes: obtaining wavefront data relating to an objective lens of a lithographic apparatus, the wavefront data measured subsequent to an exposure of a pattern on a substrate using the particular patterning device; determining a pattern specific wavefront contribution from the wavefront data and a wavefront reference, the pattern specific wavefront contribution relating to the patterning device; and tuning the lithographic process for the particular patterning device using the pattern specific wavefront contribution.