An optical arrangement for use in an optical imaging device includes an optical element unit and a detection device and/or an actuating device. The optical element unit includes at least one optical element. The detection device determines in a plurality of M degrees of freedom in each case a detection value which is representative of a relative position or orientation of an element reference of the optical element in relation to a primary reference of the detection device in the respective degree of freedom. The detection device includes a plurality of N detection units, each of which outputs a detection signal which is representative of a distance and/or a displacement of the detection unit in relation to a secondary reference assigned to the optical element and the respective detection unit.

The present application discloses an exposure method and an exposure device thereof. The method includes the following steps: confirming a position of a point to be exposed; capturing and confirming that the point to be exposed is successfully captured; adjusting a light source corresponding to the successfully captured point to be exposed to an adaptive position; and completing an exposure operation by an exposure machine.

A method and a device for characterizing a mask for microlithography in a characterization process carried out using an optical system, wherein the optical system includes an illumination optical unit and an imaging optical unit and wherein in the characterization process structures of the mask are illuminated by the illumination optical unit, the mask is imaged onto a detector unit by the imaging optical unit and image data recorded by the detector unit are evaluated in an evaluation unit. A method includes the following steps: determining a temporal variation of at least one variable that is characteristic of the thermal state of the optical system, and modifying the characterization process depending on the temporal variation determined.

An immersion lithographic apparatus having a fluid handling structure, the fluid handling structure configured to confine immersion fluid to a region and including: a meniscus controlling feature having an extractor exit on a surface of the fluid handling structure; and a gas knife system outwards of the extractor exit and including passages each having an exit, the passages having a plurality of first passages having a plurality of corresponding first exits on the surface, and a plurality of second passages having a plurality of corresponding second exits outwards of the first exits on the surface, wherein the surface faces and is substantially parallel to a top surface of a substrate during exposure, and the first exits and the second exits are arranged at a greater distance from the substrate than the extractor exit.

A method for determining a wavefront parameter of a patterning process. The method includes obtaining a reference performance (e.g., a contour, EPE, CD) of a reference apparatus (e.g., a scanner), a lens model for a patterning apparatus configured to convert a wavefront parameter of a wavefront to actuator movement, and a lens fingerprint of a tuning apparatus (e.g., a to-be-matched scanner). Further, the method involves determining the wavefront parameter (e.g., a wavefront parameter such as tilt, offset, etc.) based on the lens fingerprint of the tuning apparatus, the lens model, and a cost function, wherein the cost function is a difference between the reference performance and a tuning apparatus performance.

A method includes exposing number of fields on a substrate, obtaining data about a field and correcting exposure of the field in subsequent exposures. The method includes defining one or more sub-fields of the field based on the obtained data. Data relating to each sub-field is processed to produce sub-field correction information. A subsequent exposure of the one or more sub-fields is corrected using the sub-field correction information. By controlling a lithographic apparatus by reference to data of a particular sub-field within a field, overlay error can be reduced or minimized for a critical feature, rather than being averaged over the whole field. By controlling a lithographic apparatus with reference to a sub-field rather than only the whole field, a residual error can be reduced in each sub-field.

Techniques are disclosed for optical distortion reduction in projection systems for scanning projection and/or lithography. A projection system includes an illumination system configured to generate illumination radiation for generating an image of an object to be projected onto an image plane of the projection system. The illumination system includes a field omitting illumination condenser configured to receive the illumination radiation from a radiation source and provide a patterned illumination radiation beam to generate the image of the object, wherein the patterned illumination radiation beam comprises an omitted illumination portion corresponding to a ridge line of a roof prism disposed within an optical path of the projection system.

Embodiments described herein relate to a dynamically controlled lens used in lithography tools. Multiple regions of the dynamic lens can be used to transmit a radiation beam for lithography process. By allowing multiple regions to transmit the radiation beam, the dynamically controlled lens can have an extended life cycle compared to conventional fixed lens. The dynamically controlled lens can be replaced or exchanged at a lower frequency, thus, improving efficiency of the lithography tools and reducing production cost.

A projection exposure apparatus for semiconductor technology includes an optical arrangement with an optical element having an optically effective surface. The optical arrangement also includes an actuator embedded in the optical element. The actuator is outside the optically effective surface and outside the region located behind the optically effective surface. The optical arrangement is set up to deform the optically effective surface.

A semiconductor lithography projection exposure apparatus includes a sensor reference including reference elements. The apparatus also includes an optical element, which includes a main body comprising receiving elements receiving the reference elements. The optical element further includes a referential surface that is an optically active surface of the optical element. The reference elements are arranged to determine a position and an orientation of the optical element. A method includes aligning a sensor reference with respect to a referential surface in a semiconductor lithography projection exposure apparatus.