A projection objective for microlithography for imaging an object field onto an image field includes: a first partial objective for imaging the object field onto a first real intermediate image; a second partial objective for imaging the first intermediate image onto a second real intermediate image; a third partial objective for imaging the second intermediate image onto the image field, the third partial objective including an aperture; and a first folding mirror for deflecting radiation toward a concave mirror and a second folding mirror for deflecting the radiation from the concave mirror toward the image plane; in which the projection objective is an immersion projection objective in which during operation an immersion liquid is situated between a last lens surface and an image plane, and at least one surface of at least one lens in the second partial objective has an antireflection coating including at least six layers.

A maskless exposure device including a light source configured to emit an exposure beam, a light modulation element configured to modulate the exposure beam according to an exposure pattern, a projection optical system configured to transfer a modulated exposure beam to a substrate as a beam spot array, a beam measurement part configured to measure a beam data of the beam spot array, and a compensating mask generator configured to generate a compensating mask by utilizing a measured data of the exposure beam for compensating cumulative illumination, wherein the compensating mask generator is configured to turn off left and right beams of a first selected spot beam selected by the beam data, and then to turn off a second selected spot beam.

In an exposure apparatus and a method for defocus and tilt error compensation, each of alignment sensors (500a, 500b, 500c, 500d, 500e, 500f) corresponds to and has the same coordinate in the first direction as a respective one of focusing sensors (600a, 600b, 600c, 600d, 600e, 600f), so that each of the alignment sensors (500a, 500b, 500c, 500d, 500e, 500f) is arranged on the same straight line as a respective one of the focusing sensors (600a, 600b, 600c, 600d, 600e, 600f). As such, alignment marks can be characterized with both focusing information and alignment information. This enables the correction of errors in the alignment information and thus achieves defocus and tilt error compensation, resulting in significant improvements in alignment accuracy and the production yield.

Embodiments of the present disclosure generally relate to apparatuses and systems for performing photolithography processes. More particularly, compact apparatuses for projecting an image onto a substrate are provided. In one embodiment, an image projection apparatus includes a light pipe coupled to a first mounting plate, and a frustrated prism assembly, one or more digital micro-mirror devices, one or more beamsplitters, and one or more projection optics, which are coupled to a second mounting plate. The first and second mounting plates are coplanar, such that the image projection apparatus is compact and may be aligned in a system having a plurality of image projection apparatuses, each of which is easily removable and replaceable.

A data tuning software application platform relating to the ability to apply maskless lithography patterns to a substrate in a manufacturing process is disclosed in which the application processes graphical objects and configures the graphical objects for partition into a plurality of trapezoids. The trapezoids may be selectively merged in order to minimize the trapezoid count while limiting the loss of edge fidelity.

A method includes measuring properties of a three-dimensional topography of a lithographic patterning device, the patterning device including a pattern and being constructed and arranged to produce a pattern in a cross section of a projection beam of radiation in a lithographic projection system, calculating wavefront phase effects resulting from the measured properties, incorporating the calculated wavefront phase effects into a lithographic model of the lithographic projection system, and determining, based on the lithographic model incorporating the calculated wavefront phase effects, parameters for use in an imaging operation using the lithographic projection system.

Maskless lithographic apparatus measuring accumulated amount of light is provided. The maskless lithographic apparatus includes a light source which emits light, a stage on which a substrate is disposed, an optical system which converts the light into a beam spot array including a plurality of columns and a plurality of rows and irradiates the beam spot array onto the stage, a slit to which the beam spot array is irradiated and which passes an nth (n is a natural number) row of the beam spot array, an optical sensor which senses the nth row of the beam spot array which has passed through the slit, and a measuring unit which measures an accumulated amount of light in the nth row of the beam spot array sensed by the optical sensor

The disclosure provides an optical system, having a first optical control loop, which is set up to regulate a position and/or spatial orientation of a first optical element relative to a first module sensor frame, and a first module control loop, which is set up to regulate a position and/or spatial orientation of the first module sensor frame relative to a base sensor frame. Related components and methods are also provided

A super-resolution system for nano-patterning is disclosed, comprising an exposure head that enables a super-resolution patterning exposures. The super-resolution exposures are carried out using electromagnetic radiation and plasmonic structure, and in some embodiments, plasmonic structures having specially designed super-resolution apertures, of which the “bow-tie” and “C-aperture” are examples. These apertures create small but bright images in the near-field transmission pattern. A writing head comprising one or more of these apertures is held in close proximity to a medium for patterning. In some embodiments, a data processing system is provided to re-interpret the data to be patterned into a set of modulation signals used to drive the multiple individual channels and multiple exposures, and a detection means is provided to verify the data as written.

A catadioptric projection lens images a pattern of a mask in an effective object field of the projection lens into an effective image field of the projection lens with electromagnetic radiation with an operating wavelength λ<260 nm. The projection lens includes a multiplicity of lens elements and a multiplicity of mirrors including at least one concave mirror. The lens elements and mirrors define a projection beam path that extends from the object plane to the image plane and contains at least one pupil plane. The mirrors include a first mirror having a first mirror surface in the projection beam path between the object and pupil planes in the optical vicinity of a first field plane optically conjugate to the object plane. The mirrors also include a second mirror having a second mirror surface in the projection beam path between the pupil and image planes in the optical vicinity of a second field plane that is optically conjugate to the first field plane. The first mirror surface and/or the second mirror surface is a freeform surface.