A process of an extreme ultraviolet lithography is disclosed. The process includes receiving an extreme ultraviolet (EUV) mask, an EUV radiation source and an illuminator. The process also includes exposing the EUV mask by a radiation, originating from the EUV radiation source and directed by the illuminator, with a less-than-three-degree chief ray angle of incidence at the object side (CRAO). The process further includes removing most of the non-diffracted light and collecting and directing the diffracted light and the not removed non-diffracted light by a projection optics box (POB) to expose a target.

The disclosure provides an optical system, having a first optical control loop, which is set up to regulate a position and/or spatial orientation of a first optical element relative to a first module sensor frame, and a first module control loop, which is set up to regulate a position and/or spatial orientation of the first module sensor frame relative to a base sensor frame. Related components and methods are also provided

An EUV collector mirror has a reflection surface (16) to reflect usable EUV light which impinges on the reflection surface (16) from a source region (17) to a subsequent EUV optics. The reflection surface (16) carries a pump light grating structure (19) configured to retroreflect pump light (22) which impinges upon the pump light grating structure (19) from the source region (17) back to the source region (17). The pump light (22) has a wavelength deviating from the wavelength of the usable EUV light. Such EUV collector mirror enables a high conversion efficiency between the energy of pump light of a laser discharged produced plasma (LDPP) EUV light source on the one hand and the resulting usable EUV energy on the other.

A bottom lens for an immersion exposure tool includes a hydrophobic coating on the sidewalls of the bottom lens. A bottom portion of the bottom lens is not coated with the hydrophobic coating to maintain the optical performance of the bottom lens and to not distort a pattern that is to be transferred to a substrate. The hydrophobic coating may reduce the thermal instability of the bottom lens. This may reduce overlay variation during operation of the immersion exposure tool, which may increase manufacturing yield, decrease device failures, and/or decrease rework and repairs.

An extreme ultraviolet light concentrating mirror may include a substrate, a multilayer reflection film provided on the substrate and configured to reflect extreme ultraviolet light, and a protective film provided on the multilayer reflection film. Here, the protective film may include a mixed film in which a network-forming oxide is mixed with an amorphous titanium oxide, or a mixed film in which two or more amorphous titanium oxide layers and two or more network-forming oxide layers are each alternately laminated.

A projection display device comprising a light source and an SBG device having a multiplicity of separate SBG elements sandwiched between transparent substrates to which transparent electrodes have been applied. The substrates function as a light guide. A least one transparent electrode comprises a plurality of independently switchable transparent electrode elements, each electrode element substantially overlaying a unique SBG element. Each SBG element encodes image information to be projected on an image surface. Light coupled into the light guide undergoes total internal reflection until diffracted out to the light guide by an activated SBG element. The SBG diffracts light out of the light guide to form an image region on an image surface when subjected to an applied voltage via said transparent electrodes.

An optical fiber, manufacturing intermediate for forming an optical fiber and a method for forming an optical fiber. The method includes providing a manufacturing intermediate having an elongate body and having an aperture extending through the elongate body along an axial dimension of the elongate body, a boundary of the aperture defining an internal surface of the manufacturing intermediate. The method further includes etching the internal surface of the manufacturing intermediate using an etching substance, and drawing the manufacturing intermediate along the axial dimension so as to form the optical fiber.

Provided are an optical device capable of effectively preventing contamination and a method for preventing contamination of the same. An optical device according to an embodiment includes a light source that generates light containing EUV (Extreme UltraViolet) light or VUV (Vacuum UltraViolet) light, a chamber in which an object to be irradiated with the light is placed, an optical element placed inside the chamber to guide the light, an introduction unit that introduces hydrogen or helium into the chamber, a power supply that applies a negative voltage to the optical element in the chamber, an ammeter that measures an ion current flowing through the optical element, and a control unit that adjusts the amount of the hydrogen or the helium introduced according to a measurement result of the ammeter.

An optical arrangement for EUV lithography, including: at least one component (23) having a main body (32) with at least one surface region (30) which is exposed to activated hydrogen (H.sup.+, H*) during operation of the optical arrangement. The main body (32) contains at least one material which forms at least one volatile hydride upon contact of the surface region (30) with the activated hydrogen (H.sup.+, H*). At the surface region, noble metal ions (38) are implanted into the main body (32) in order to prevent the formation of the volatile hydride.

A mirror that has a mirror substrate (12), a reflection layer stack (21) reflecting electromagnetic radiation incident on the optical effective surface (11), and at least one piezoelectric layer (16) arranged between the mirror substrate and the reflection layer stack and to which an electric field for producing a locally variable deformation is applied by way of a first electrode arrangement and a second electrode arrangement situated on alternate sides of the piezoelectric layer. In one aspect, both the first and the second electrode arrangements have a plurality of electrodes (20a, 20b), to each of which an electrical voltage relative to the respective other electrode arrangement can be applied via leads (19a, 19b). Separate mediator layers (17a, 17b) set continuous electrical potential profiles along the respective electrode arrangement, and where said mediator layers differ from one another in their average electrical resistance by a factor of at least 1.5.