A device includes a light source and a light guide. The light source is configured to emit photoresist-curative electromagnetic radiation. The light guide is arranged to receive the photoresist-curative electromagnetic radiation from the light source and to guide the received radiation by total internal reflection, the light guide including a pattern of emission points on at least one surface of the light guide, the emission points emitting the photoresist-curative electromagnetic radiation out of the light guide by frustration of total internal reflection caused by the emission points.

A gamma ray generator includes a rotational shaft, a plurality of holders and a plurality of gamma ray sources. The holders are connected to the rotational shaft. The gamma ray sources are disposed in the holders respectively, wherein the holders respectively have an upper portion and a lower portion connecting to the upper portion, and the gamma ray source is placed at an interface between the upper portion and the lower portion.

According to one embodiment, a resist placing method sets first and second grating vectors of a drop grating on which to place a resist drop. At this time, the first and second grating vectors are set based on information about a grid, which is a minimum grating unit for which the resist drop can be dropped, such that the thickness of a resist film after imprinting is within a predetermined range. In this case, the first and second grating vectors are set to be in directions different from both first and second minimum grating vectors of the grid. Then, the resist drop is placed in the drop grating.

An exposure apparatus may include a laser light source capable of varying a wavelength of a laser beam that is emitted from the laser light source, a mask on which a pattern is formed, the pattern being configured to generate diffracted light by being irradiated with the laser beam, and a controller configured to control, in accordance with a distance between the mask and a substrate, the wavelength of the laser beam that is emitted from the laser light source, wherein the mask is irradiated with the laser beam emitted from the laser light source to perform proximity exposure on a surface of the substrate.

A gamma ray generator includes a rotational shaft, a plurality of holders and a plurality of gamma ray sources. The holders are connected to the rotational shaft. The gamma ray sources are disposed in the holders respectively, wherein the holders respectively have an upper portion and a lower portion connecting to the upper portion, and the gamma ray source is placed at an interface between the upper portion and the lower portion.

Provided is a substrate deforming device for proximity exposure, the device comprising: a mask holder for holding an exposure mask; a first plate which is spaced apart from the exposure mask in a certain direction, and holds a to-be-exposed substrate; a position adjustment part for adjusting the position of the exposure mask; a gap adjustment part for adjusting a gap between the exposure mask and the to-be-exposed substrate; a first sensor for measuring the position of at least one among the exposure mask and the to-be-exposed substrate; a second sensor for measuring the gap between the exposure mask and the to-be-exposed substrate; and a control unit which performs a first control according to the measurement result from the first sensor, and after the first control, performs a second control according to the measurement result from the second sensor. The first control reduces the relative distance between the exposure mask and the to-be-exposed substrate by means of the position adjustment part. The second control deforms the to-be-exposed substrate by means of the gap adjustment part in response to deflection of the exposure mask.

In accordance with an embodiment of the disclosure, a method of patterning can include dividing an image into a set of frame sections; determining a tip pattern for a respective portion of an image to be patterned by each tip of the tip array in each frame section of the set of frame sections; disposing the tip array in a patterning position in a first location of the substrate corresponding to a location of the substrate in which the first frame section in the set of frame sections is to be patterned; projecting a first pattern of radiation onto the tip array to selectively irradiate one or more tips of the tip array and pattern the substrate, wherein the first pattern of radiation corresponds to a tip pattern for the first frame section; disposing the tip array in a patterning position in a second location of the substrate corresponding to a location of the substrate in which the second frame section in the set of frame sections is to be patterned; projecting a second pattern of radiation onto the tip array to selectively irradiate tips of the tip array and pattern the substrate, wherein the second pattern of radiation corresponds to a tip pattern for the second frame section; and repeating the disposing and projecting for each frame section in the set of frame sections to pattern the image.

Embodiments of the present disclosure provide a mask device, an exposure apparatus and an exposure method, which enable a reduction in the possibility that the mask is scratched during exposure so as to protect the mask, and in turn a reduction in production cost of the semiconductor devices. The mask device comprises a mask carrier, a mask disposed on a lower surface of the mask carrier, and at least one protection unit provided on the mask carrier, wherein a lower end of the at least one protection unit is arranged to be lower than the lower surface of the mask during exposure. The mask device is applicable in exposure of a substrate to be exposed.

Provided is a method of making a circuit pattern. The method includes: Step (A): providing a master substrate comprising a first photosensitive layer containing photosensitive particles; Step (B): providing an energy beam to reduce metal ions in a predetermined area of the first photosensitive layer to form multiple first metal particles; Step (C): removing unreduced photosensitive particles by a fixer to obtain a master mask; wherein the first metal particles form a first predetermined pattern in the master mask; Step (D): providing a chip comprising a second photosensitive layer containing second photosensitive particles; Step (E): putting the master mask on the second photosensitive layer and providing an energy beam to reduce metal ions of an uncovered part of the second photosensitive layer to form multiple atomized second metal particles; Step (F): removing unreduced photosensitive particles by a fixer to obtain the circuit pattern having line spacing at picoscopic/nanoscopic scale.

Methods and systems that include the generation of a map of modulation values for a spatial light modulator. In which a map representative of a desired curing region is received. Receiving, for each pixel of a spatial light modulator, spatial information representative of an intensity distribution of actinic radiation at a plane of formable material under a template that is guided from the spatial light modulator to the plane of the formable material for curing the formable material under the template. Receiving a dose threshold for the formable material. Generating a map of modulation values for each pixel in the spatial light modulator based on: the dose threshold; the spatial information for all of the pixels; and the map representative of the desired curing region.