Micro- and nano-patterns in imprint layers formed on a substrate and lithographic methods for forming such layers. The layers include a plurality of structures, and a residual layer having a residual layer thickness (RLT) that extends from the surface of the substrate to a base of the structures, where the RLT varies across the surface of the substrate according to a predefined pattern.

A foreign substance inspection apparatus according to the present invention detects a foreign substance on a substrate, and includes a detection unit that includes a light projector configured to project light to a surface of the substrate and a light receiver configured to receive scattered light from the surface, an adjustment mechanism configured to adjust a light quantity of the scattered light received by the light receiver, and a control unit configured to perform foreign substance detection in a state where sensitivity of the detection unit is changed to low sensitivity, after performing foreign substance detection in a state where the sensitivity of the detection unit is set to high sensitivity by adjusting the light quantity of the scattered light received by the light receiver.

A gamma ray generator includes a plate, a plurality of holes and a plurality of gamma ray sources. The plate is configured to rotate along a rotational axis. The holes are disposed in the plate, and the holes are arranged in a matrix. The gamma ray sources are respectively placed in the holes.

Provided is a substrate deforming device for proximity exposure, the device comprising: a mask holder for holding an exposure mask; a first plate which is spaced apart from the exposure mask in a certain direction, and holds a to-be-exposed substrate; a position adjustment part for adjusting the position of the exposure mask; a gap adjustment part for adjusting a gap between the exposure mask and the to-be-exposed substrate; a first sensor for measuring the position of at least one among the exposure mask and the to-be-exposed substrate; a second sensor for measuring the gap between the exposure mask and the to-be-exposed substrate; and a control unit which performs a first control according to the measurement result from the first sensor, and after the first control, performs a second control according to the measurement result from the second sensor. The first control reduces the relative distance between the exposure mask and the to-be-exposed substrate by means of the position adjustment part. The second control deforms the to-be-exposed substrate by means of the gap adjustment part in response to deflection of the exposure mask.

A gamma ray generator includes a plate, a plurality of holes and a plurality of gamma ray sources. The plate is configured to rotate along a rotational axis. The holes are disposed in the plate, and the holes are arranged in a matrix. The gamma ray sources are respectively placed in the holes.

An apparatus for securing a printing screen frame is configured so that, when a piston rod moves backward due to the supply of air pressure, tensile force applied to a support frame of a printing screen unit by a coupling protrusion of a tension member is released and the printing screen unit can be replaced, and, when the piston rod moves forward as an elastic spring extends due to the stop of the supply of the air pressure, the coupling protrusion of the tension member is caught on the support frame of the printing screen unit and applies pressure thereto due to elastic force so as to tension the printing screen, and then reverse pressure can be applied thereto by using air pressure, as needed.

The present application relates to contact immersion lithography systems and methods of their use. An example immersion lithography system includes a photomask substrate and at least one sensor disposed along a surface of the photomask substrate. The immersion lithography system also includes a controller having at least one processor and a memory. The at least one processor is configured to execute program instructions stored in the memory so as to carry out operations. The operations include receiving, from the at least one sensor, information indicative of an electric field proximate to the at least one sensor. The operations also include determining, based on the received information, at least one of: a thickness of a liquid layer adjacent to the photomask substrate or a distance to a further substrate adjacent to the photomask substrate.

The present invention discloses a method that combines two different hologram origination processes in a single photoresist layer by using an interlayer to transfer structures exposed by electron beam lithography into overlapped with dot-matrix hologram areas, and fabricated holographic structures are replicated in multilayer polymer films. Dot-matrix technique is low cost process, which has high origination speed and can be used for the patterning of large areas of holograms with high diffraction efficiency. Electron beam lithography allows the formation of high resolution structures. The proposed manufacturing method allows combining these two technologies so that the final security device could contain electron beam patterned high resolution diffraction gratings, computer generated holograms, as well as dot-matrix laser patterned large hologram areas with high diffraction efficiency, providing an increased level of protection.

The invention relates to a positioning device for positioning a substrate, in particular a wafer, comprising: a process chamber; a base body; a carrier element which comprises a support for supporting the substrate, the carrier element being arranged above the base body and formed movable in terms of distance from the base body; and a holder for an additional substrate, in particular an additional wafer or a mask, the holder being arranged opposite the carrier element; wherein there is, between the base body and the carrier element, a sealed-off cavity to which a pressure, in particular a negative pressure, can be applied so as to prevent undesired movement of the carrier element as a result of the action of an external force.

One of gamma ray lithography systems includes a gamma ray generator and a wafer stage. The gamma ray generator is configured to generate a substantially uniform gamma ray. The gamma ray generator includes a plurality of gamma ray sources and a rotational carrier. The rotational carrier is configured to hold the gamma ray sources and rotate along a rotational axis. The wafer stage is disposed below the gamma ray generator and configured to secure a wafer.