The present application relates to a film mask including: a transparent substrate; a darkened light-shielding pattern layer provided on the transparent substrate; and a release force enhancement layer provided on the darkened light-shielding pattern layer and having surface energy of 30 dynes/cm or less, a method for manufacturing the same, and a method for forming a pattern using the film mask.

Disclosed herein is a method that combines two different hologram origination processes in a single photoresist layer by using an interlayer to transfer structures exposed by electron beam lithography into overlapped with dot-matrix hologram areas, and fabricated holographic structures are replicated in multilayer polymer films. Dot-matrix technique is low cost process, which has high origination speed and can be used for the patterning of large areas of holograms with high diffraction efficiency. Electron beam lithography allows the formation of high resolution structures. The method allows combining these two technologies so that the final security device could contain electron beam patterned high resolution diffraction gratings, computer generated holograms, as well as dot-matrix laser patterned large hologram areas with high diffraction efficiency, providing an increased level of protection.

Provided is an image exposure device capable of recording a favorable image and capable of decreasing the size of the device. An image exposure device (10) includes an image display device (12) having pixels (13), a photosensitive recording medium support portion (21) that supports a photosensitive recording medium (14) for recording an image of the image display device (12) in a state in which an exposure surface (14A) of the photosensitive recording medium (14) faces the image display device (12), and a transmitted light control portion (16) that is provided between the image display device (12) and the photosensitive recording medium support portion (21) and is formed by laminating three or more layers of transmission members (100) that have a plurality of openings (102) formed therein and transmit only light incident on the openings (102).

Methods and systems that include the generation of a map of modulation values for a spatial light modulator. In which a map representative of a desired curing region is received. Receiving, for each pixel of a spatial light modulator, spatial information representative of an intensity distribution of actinic radiation at a plane of formable material under a template that is guided from the spatial light modulator to the plane of the formable material for curing the formable material under the template. Receiving a dose threshold for the formable material. Generating a map of modulation values for each pixel in the spatial light modulator based on: the dose threshold; the spatial information for all of the pixels; and the map representative of the desired curing region.

Micro- and nano-patterns in imprint layers formed on a substrate and lithographic methods for forming such layers. The layers include a plurality of structures, and a residual layer having a residual layer thickness (RLT) that extends from the surface of the substrate to a base of the structures, where the RLT varies across the surface of the substrate according to a predefined pattern.

A wafer support system has a wafer support device and a dicing frame, wherein the wafer support device has a bottom plate and a top plate. The top plate has a support surface for supporting the wafer, and the bottom plate has a maximum diameter being larger than the maximum diameter of the top plate so that the bottom plate forms a repository for the dicing frame. The dicing frame has a plate-like shape defining a center hole, wherein the minimum diameter of the center hole is larger than the maximum diameter of the top plate so that the dicing frame sinks below the upper surface of the wafer and/or the support surface. Further, a wafer support device, a wafer support system and a mask aligner are provided.

To provide a cleaning apparatus advantageous for cleaning, for example, an original plate used to transfer a pattern to a substrate. Provided is a cleaning apparatus that cleans an original plate used when a pattern is transferred to a substrate, the cleaning apparatus including a region dividing unit which divides the original plate into a plurality of regions on the basis of information of the original plate, a conditions generator which generates cleaning conditions for each of the separate regions, and a cleaner which cleans the original plate on the basis of the cleaning conditions.

An ultraviolet (UV) light source is provided. The device uses a high-uniformity diode array. A lens unit of collimated illumination lenses is used. A light source of UV light-emitting diode (UVLED) array is formed and passes through the lens unit to uniformly distribute the light source and obtain a collimated light. The present invention comprises a light source of UVLED array; a collimated illumination lens unit; and a substrate. The construction is simple. The present invention can be applied in the lithography of a semiconductor. The lithography forms contact lines of widths not greater than 3 microns (m); soft-contact lines of widths of 330 m; and short-spaced lines of widths of 30200 m. The present invention avoids the mask from contact wear-out for multiple uses, and further reduces the replacement rate.

The present application relates to contact immersion lithography exposure units and methods of their use. An example contact exposure unit includes a container configured to contain a fluid material and a substrate disposed within the container. The substrate has a first surface and a second surface, and the substrate includes a photoresist material on at least the first surface. The contact exposure unit includes a photomask disposed within the container. The photomask is optically coupled to the photoresist material by way of a gap comprising the fluid material. The contact exposure unit also includes an inflatable balloon configured to be controllably inflated so as to apply a desired force to the second surface of the substrate to controllably adjust the gap between the photomask and the photoresist material.

One of gamma ray lithography systems includes a gamma ray generator and a wafer stage. The gamma ray generator is configured to generate a substantially uniform gamma ray. The gamma ray generator includes a plurality of gamma ray sources and a rotational carrier. The rotational carrier is configured to hold the gamma ray sources and rotate along a rotational axis. The wafer stage is disposed below the gamma ray generator and configured to secure a wafer.