G03F7/704

FLUID FLOW DEVICE AND METHOD FOR MAKING THE SAME

Techniques for making fluid flow devices are described. The technique is based on radiation-induced conversion of a radiation-sensitive substance from a first state to a second state. With adjustment of the radiation parameters such as power and scan speed we can control the depths of barriers that are formed within a substrate which can produce 3D flow paths. We have used this depth-variable patterning protocol for stacking and sealing of multilayer substrates, for assembly of backing layers for two-dimensional (2D) lateral flow devices and for fabrication of 3D devices. Since the 3D flow paths can be formed via a single laser-writing process by controlling the patterning parameters, this is a distinct improvement over other methods that require multiple complicated and repetitive assembly procedures.

GEOMETRY VECTORIZATION FOR MASK PROCESS CORRECTION
20190101834 · 2019-04-04 ·

Various aspects include vectorization approaches for model-based mask proximity correction (MPC). In some cases, a computer-implemented method includes: assigning a set of vectors to geometry data describing at least one mask for forming an integrated circuit (IC); adjusting a statistical predictive model of the at least one mask based upon the set of vectors and the geometry data; predicting an adjustment to the at least one mask with the statistical predictive model; and adjusting instructions for forming the at least one mask in response to a predicted mask result of the statistical predictive model deviating from a target mask result for the at least one mask.

Fabrication of Microscale Structures
20240241450 · 2024-07-18 ·

A method for patterning a substrate involves depositing a layer of resist material on a surface of the substrate, lithographically patterning (electron beam exposing and then developing) the layer of the resist material to form a patterned resist layer having a pattern multi-faceted microscale structures with a depth profile that varies over an area of the layer of resist material, and using the patterned resist layer in an etching step to transfer the pattern of multi-faceted microscale structures from the patterned resist layer to the substrate.

METHOD AND APPARATUS FOR DIRECT WRITE MASKLESS LITHOGRAPHY

An exposure apparatus including: a substrate holder constructed to support a substrate; a patterning device configured to provide radiation modulated according to a desired pattern, the patterning device including a plurality of two-dimensional arrays of radiation sources, each radiation source configured to emit a radiation beam; a projection system configured to project the modulated radiation onto the substrate, the projection system including a plurality of optical elements arranged side by side and arranged such that a two-dimensional array of radiation beams from a two-dimensional array of radiation sources impinges a single optical element of the plurality of optical elements; and an actuator configured to provide relative motion between the substrate and the plurality of two-dimensional arrays of radiation sources in a scanning direction to expose the substrate.

DIGITAL LITHOGRAPHY SCAN SEQUENCING

A digital lithography system includes adjacent scan regions, exposure units located above the scan regions, a memory, and a processing device operatively coupled to the memory. The exposure units include a first exposure unit associated with a first scan region and a second exposure unit associated with a second scan region. The processing device is to initiate a digital lithography process to pattern a substrate disposed on a stage in accordance with instructions. The processing device is to further perform a first pass of the first exposure unit over a stitching region at an interface of the first scan region and the second scan region at a first time. The processing device is to further perform a second pass of the second exposure unit over the stitching region at a second time that varies from the first time by less than forty seconds.

Method and device for pattern generation

A rasterization method of patterns with periodic components for SLMs is presented, comprising obtaining (S10) of an original pattern, having a periodicity. A first pattern main period is determined (S21). Image area and a first pitch of imaged elements are obtained (S31). The original pattern is scaled (S41) by a first raster scaling factor. The scaled pattern is cropped (S51) to comprise a first integer number of repetitions of the pattern items presenting a periodicity in the first direction that is covered by the image area, giving a rasterized pattern adapted to the intended pattern generator. The rasterized pattern is associated with data representing the first scaling factor. A writing method comprises obtaining of the rasterized pattern. Elements of the SLM in the pattern generator falling outside the rasterized pattern are set to be disabled. The rasterized pattern is written with an optical scaling to a target surface.

STITCHLESS DIRECT IMAGING FOR HIGH RESOLUTION ELECTRONIC PATTERNING

A method of manufacture of objects including receiving a CAD file containing electrical circuit design data for direct writing on a surface, the CAD file including CAD data for a multiplicity of objects to be produced on the surface, automatically configuring a direct write machine to direct write direct writing data based on the CAD data on the surface in plural scans, each having a scan width less than a width of the surface, including arranging the direct writing data for the multiplicity of objects to be written in a side by side manner in each of the plural scans so as to be within the scan width, whereby stitching of direct writing data between adjacent scans is obviated and operating the direct write machine to create the multiplicity of objects on the surface.

Exposure head, exposure apparatus and method of operating an exposure head

The invention is directed at an exposure head for use in an exposure apparatus for illuminating a surface, the exposure head comprising one or more radiative sources for providing one or more beams, an optical scanning unit arranged for receiving the one or more beams and for directing the beams towards the surface for impinging each of the beams on an impingement spot, a rotation actuating unit connected to the optical scanning unit for at least partially rotating the optical scanning unit, wherein the impingement spots of the one or more beams are scanned across the surface by said at least partial rotation of the optical scanning unit, wherein the optical scanning unit comprises a transmissive element including one or more facets for receiving the one or more beams and for outputting the beams after conveying thereof through the transmissive element, for displacing the beams upon said rotation of the transmissive element for enabling the scanning of the impingement spots.

CYCLIC EXPOSURE SCANNING SYSTEM HAVING DISTRIBUTED MULTI-LENS AND METHOD THEREOF
20240329541 · 2024-10-03 ·

The present invention provides a cyclic exposure scanning system having distributed multi-lens and method thereof. The system includes a processor, a platform, an optical engine, a first optical imaging device, a second optical device and a light guide structure. By executing the method of the present disclosure by the system, the optical engine projects the first optical image and the second optical image respectively. The first optical image is guided to the first optical imaging device and the second optical image is sequentially guided to the second optical imaging device through the light guide structure. The first optical imaging device and the second optical imaging device receives and projects the first and second optical images onto the corresponding exposure areas, respectively. Such that efficiency and light source utilization may be significantly increased.

Photonic activation of reactants for sub-micron feature formation using depleted beams

A fine feature formation method and apparatus provide photon induced deposition, etch and thermal or photon based treatment in an area of less than the diameter or cross section of a STED depleted laser beam. At least two STED depleted beams are directed to a reaction location on a substrate where a beam overlap region having an area smaller than the excitation portion of the beams is formed. A reactant or reactants introduced to the reaction region is excited by the combined energy of the excitation portions of the two beams, but not excited outside of the overlap region of the two excitation portions of the beams. A reactant is caused to occur only in the overlap region. The overlap region may be less that 20 nm wide, and less than 1 nm in width, to enable the formation of substrate features, or the change in the substrate, in a small area.